MOSFET SMD Type N-Channel MOSFET AO4588 (KO4588) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V ● ID = 20 A (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 4.8mΩ (VGS = 10V) ● RDS(ON) ＜ 6.2mΩ (VGS = 4.5V) ● ESD Rating: 2KV HBM 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID 15.5 140 IAS,IAR 45 EAS,EAR 101 RthJA RthJL V 20 IDM PD Unit 3.1 2 A mJ W 40 75 ℃/W 24 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4588 (KO4588) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions Min Typ 30 ID=250μA, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±16V VDS=VGS , ID=250uA RDS(On) VGS=10V, ID=20A 1.3 On State Drain Current ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=10V, VDS=5V VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 2940 270 510 130 310 1.2 3.6 32 50 15 24 7.2 Turn-On DelayTime td(on) 7 trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking 2 4588 KC**** www.kexin.com.cn Ω nC 5 ns 41.5 IF= 20A, dI/dt= 500A/us 17.5 22 31 40 nC 4.5 A 1 V IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. ■ Marking pF 10.5 tf Body Diode Reverse Recovery Time S 1950 6.6 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω mΩ A Qgd Turn-Off Fall Time V 85 Gate Drain Charge tr 2.4 140 VDS=5V, ID=20A Qgs td(off) uA 6.2 Gate Source Charge Turn-Off DelayTime ±10 7.3 TJ=125℃ Qg Turn-On Rise Time uA 4.8 VGS=4.5V, ID=16A Forward Transconductance Unit V VDS=30V, VGS=0V VGS=10V, ID=20A Static Drain-Source On-Resistance Max MOSFET SMD Type N-Channel MOSFET AO4588 (KO4588) ■ Typical Characterisitics 100 80 10V 4V 80 60 4.5V 60 ID(A) ID (A) VDS=5V 3.5V 3V 40 20 40 125°C 20 VGS=2.5V 25°C 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 1.8 Normalized On-Resistance VGS=4.5V 5 RDS(ON) (mΩ ) 2 4 VGS=10V 3 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=16A 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 12 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=20A 1.0E+01 10 40 8 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 6 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 4 1.0E-04 25°C 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4588 (KO4588) ■ Typical Characterisitics 10 3600 VDS=15V ID=20A 8 3200 Capacitance (pF) 6 VGS (Volts) Ciss 2800 4 2400 2000 1600 1200 Coss 800 2 400 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 1000 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 TA=25°C 100 TA=150°C TA=125°C 10 100.0 TA=100°C ID (Amps) IAR (A) Peak Avalanche Current Crss 0 10µs RDS(ON) limited 10.0 100µs 1m 10ms 1.0 TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 1 0.01 1 10 100 1000 µs) Time in avalanche, tA (µ . Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0 .0 0 0 0 1 0 .0 0 1 0 .1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4 www.kexin.com.cn 1000 MOSFET SMD Type N-Channel MOSFET AO4588 (KO4588) ■ Typical Characterisitics Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 5