SMD Type MOSFET

MOSFET
SMD Type
N-Channel MOSFET
AO4354 (KO4354)
SOP-8
■ Features
● VDS (V) = 30V
● ID = 23 A (VGS = 10V)
1.50 0.15
● RDS(ON) < 3.7mΩ (VGS = 10V)
0.21 -0.02
+0.04
● RDS(ON) < 5.3mΩ (VGS = 4.5V)
1
2
3
4
D
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
VSPIKE
36
VDS Spike
Continuous Drain Current
100ns
TA=25℃
TA=70℃
ID
14
IDM
174
Avalanche Current
IAS
37
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
L=0.1mH
TA=25℃
TA=70℃
t ≤ 10s
Steady-State
EAS
PD
RthJA
RthJL
V
V
23
Pulsed Drain Current
Avalanche energy
Unit
68
3.1
1.2
A
mJ
W
40
75
℃/W
24
TJ
150
Tstg
-55 to 150
℃
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MOSFET
SMD Type
N-Channel MOSFET
AO4354 (KO4354)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
ID=250 uA, VGS=0V
Min
Typ
30
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250uA
Static Drain-Source On-Resistance
RDS(On)
VDS=30V, VGS=0V
1
VDS=30V, VGS=0V, TJ=55℃
5
VGS=10V, ID=20A
1.2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge (10V)
Total Gate Charge (4.5V)
VDS=5V, ID=20A
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.9
2.7
36
49
17
23
6
Turn-On DelayTime
td(on)
7.5
tf
trr
Body Diode Reverse Recovery Charge
Qrr
Maximum Body-Diode Continuous Current
Diode Forward Voltage
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
Marking
2
4354
KC****
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nC
ns
7.5
IF= 20A, dI/dt= 500A/us
14
20.3
IS=1A,VGS=0V
Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
■ Marking
Ω
4
37
IS
VSD
pF
124
8
Turn-Off Fall Time
mΩ
S
898
Qgd
Body Diode Reverse Recovery Time
V
2010
VGS=0V, VDS=15V, f=1MHz
Gate Drain Charge
tr
2.2
105
Qgs
td(off)
nA
5.3
Gate Source Charge
Turn-On Rise Time
±100
5
TJ=125℃
Qg
Turn-Off DelayTime
uA
3.7
VGS=4.5V, ID=20A
gFS
Unit
V
VGS=10V, ID=20A
Forward Transconductance
Max
nC
4
A
1
V
MOSFET
SMD Type
N-Channel MOSFET
AO4354 (KO4354)
■ Typical Characterisitics
100
50
VDS=5V
4.5V
80
40
3.5V
10V
30
ID(A)
ID (A)
60
3V
40
20
125°C
25°C
10
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
6
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
5
6
1.8
5
VGS=4.5V
4
3
2
VGS=10V
1
0
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
1.0E+02
ID=20A
1.0E+01
6
1.0E+00
125°C
4
IS (A)
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
1.0E-01
1.0E-02
2
25°C
25°C
1.0E-03
1.0E-04
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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MOSFET
SMD Type
N-Channel MOSFET
AO4354 (KO4354)
■ Typical Characterisitics
10
3000
VDS=15V
ID=20A
2500
Capacitance (pF)
8
VGS (Volts)
6
4
2
2000
1500
1000
Coss
500
0
Crss
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
1000.0
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
10000
10µs
RDS(ON)
100µs
10.0
1.0
1ms
DC
0.1
10ms
0.0
0.1
1000
100
10
TJ(Max)=150°C
TC=25°C
0.01
TA=25°C
10µs
Power (W)
100.0
ID (Amps)
Ciss
1
VDS (Volts)
10
100
1
0.00001
.
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
4
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100
1000