Transistors SMD Type NPN Transistors 2SD1366 ■ Features 1.70 0.1 ● Low frequency power amplifier ● Complementary to 2SB1000 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse (Note.1) ICP 1.5 Collector Power Dissipation PC 1 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V A W ℃ Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA， R BE=∞ 20 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Unit V Collector-emitter saturation voltage VCE(sat) IC=800 mA, IB=80mA 0.15 0.3 Base - emitter saturation voltage VBE(sat) IC=800 mA, IB=80mA 0.9 1 V DC current gain hFE VCE= 2V, IC= 0.5 A Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 22 pF VCE= 2V, IC= 500mA 240 MHz Transition frequency fT 85 uA 240 ■ Classification of hfe Type 2SD1366-A 2SD1366-B Range 85-170 120-240 Marking AA AB www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1366 ■ Typical Characterisitics 0.8 0.4 7 800 6 5 600 4 3 400 2 200 Typical Transfer Characteristics 1 mA 25。 C 30 10 3 0 IC = 10 IB 0.20 0.15 0.10 0.05 Ta = 75。 C 1 3 25 10 30 100 300 1,000 Collector Current IC (mA) www.kexin.com.cn VCE = 2 V 2,000 1,000 500 Ta = 75。 C 200 25。 C 100 50 20 10 5 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage vs. Collector Current 0.25 0 DC Current Transfer Ratio hFE 。 Ta = 75 C 100 0.4 0.8 1.2 1.4 1.6 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 5,000 300 Gain Bandwidth Product fT (MHz) Collector Current IC (mA) VCE = 2 V 300 1 0 100 150 50 Ambient Temperature Ta (。 C) 1,000 Collector to Emitter Saturation Voltage VCE(sat) (V) Typical Output Characteristics IB = 0 0 2 1,000 Collector Current IC (mA) Collector Power Dissipation PC (W) (on the alumina ceramic board) 1.2 Maximum Collector Dissipation Curve 1 10 30 100 300 1,000 3 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current VCE = 2 V 200 100 0 10 100 300 30 Collector Current IC (mA) 1,000 Transistors SMD Type NPN Transistors 2SD1366 Collector Output Capacitance Cob (pF) ■ Typical Characterisitics Collector Output Capacitance vs. Collector to Base Voltage 200 f = 1 MHz IE =0 100 50 20 10 5 1 2 5 10 20 50 Collector to Base Voltage VCB (V) www.kexin.com.cn 3