JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors TO-251-3L/TO-252-2L 3DD13003 TRANSISTOR ( NPN ) FEATURES Power Switching Applications MAXIMUM RATINGS(TA=25 ℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1.25 W Collector Dissipation PC TJ, Tstg Junction and Storage Temperature 1.. BASE Unit 2. COLLECTOR 3. EMITTER ℃ -55~+150 ELECTRICAL CHARA CTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO Ic= = 1mA,IE 0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic== 10 mA,IB 0 400 V Emitter-base breakdown voltage V(BR)EBO 9 V = IE= 1mA, IC 0 Collector cut-off current ICBO = VCB= 700V,IE 0 1 mA Collector cut-off current ICEO = VCE= 400V,IB 0 0.5 mA Emitter cut-off current IEBO 1 mA DC current gain = VEB= 9 V, IC 0 hFE（1） VCE= 5 V, IC= 0.5 A 8 hFE（2） VCE= 5 V, IC= 1.5A 5 40 Collector-emitter saturation voltage VCE(sat) IC=1A,IB= 250 mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=1A, IB= 250mA 1.2 V Base-emitter voltage VBE 3 V Transition frequency fT Fall time tf IC= 1A,IB1=-IB2=0.2A VCC=100V Storage time ts IC=250mA IE= 2A VCE=10V,Ic=100mA 5 f =1MHz MHz 2 0.5 µs 4 µs CLASSIFICATION OF hFE(1) Rank Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40 CLASSIFICATION OF tS Rank A1 Range 2-2.5 (μs ) A2 2.5-3(μs ) B1 3-3.5(μs ) B2 3.5-4 (μs ) D,Nov,2013 Typical Characteristics 3DD13003 Static Characteristic 1.00 COMMON EMITTER Ta=25℃ 30mA DC CURRENT GAIN IC 35mA 25mA 0.50 20mA 15mA 0.25 IC Ta=100℃ hFE 40mA 0.75 —— COMMON EMITTER VCE= 5V 50mA 45mA COLLECTOR CURRENT (A) hFE 100 Ta=25℃ 10 10mA IB=5mA 0.00 1 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1200 6 7 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ Ta=100 ℃ 400 10 IC —— IC 100 ℃ 25 T a= 1 10 (mA) VBE PC 1.50 1000 1500 100 COLLECTOR CURRENT —— IC (mA) Ta COMMON EMITTER VCE=5V 100 10 T= a 25 ℃ T= a 10 0℃ IC (mA) IC 0℃ 10 T a= 1000 1500 100 COLLECTOR CURREMT COLLECTOR CURRENT (mA) 10 1 COLLECTOR POWER DISSIPATION PC (W) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 800 1500 1000 —— IC β=4 1000 200 0.1 1000 1500 100 COLLECTOR CURRENT β=4 600 10 VCE (V) 1 0.1 0 200 400 600 BASE-EMMITER VOLTAGE VBE (mV) 800 1000 1.25 1.00 0.75 0.50 0.25 0.00 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) D,Nov,2013