JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS CJ3134K N-Channel MOSFET SOT-723 FEATURES z Lead Free Product is Acquired z Surface Mount Package z N-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive APPLICATION z Load/Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics z Logic Level Shift 1. GATE 2. SOURCE 3. DRAIN MARKING: KF Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Value Unit 20 V VGS ±12 V Continuous Drain Current (note 1) ID 0.75 A Pulsed Drain Current IDM 1.8 A PD 150 mW RθJA 833 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ (tp=10μs) Power Dissipation (note 1) Thermal Resistance from Junction to Ambient (note 1) Lead Temperature for Soldering Purposes(1/8” from case for 10 s) A,Sep,2013 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V ±50 µA VGS(th) VDS =VGS, ID =250µA 1 V VGS =4.5V, ID =0.65A 380 mΩ VGS =2.5V, ID =0.55A 450 mΩ VGS =1.8V, ID =0.45A 800 mΩ Gate threshold voltage (note 2) Drain-source on-resistance (note 2) RDS(on) Forward transconductance (note 2) gFS VDS =10V, ID =0.8A Diode forward voltage VSD IS=0.15A, VGS = 0V 20 V 0.35 1.6 S 1.2 V 79 120 pF 13 20 pF 15 pF DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 9 td(on) 6.7 ns VGS=4.5V,VDS=10V, 4.8 ns ID =500mA,RGEN=10Ω 17.3 ns 7.4 ns VDS =16V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 4) Turn-on delay time (note 3) Turn-on rise time (note 3) tr Turn-off delay time (note3) td(off) Turn-off fall time (note 3) tf Notes : 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. A,Sep,2013 Typical Characteristics Transfer Characteristics Output Characteristics 4 Pulsed CJ3134K 2.0 VDS=5.0V VGS=10.0V、4.5V、3.5V Pulsed 1.6 3 (A) ID Ta=100℃ 1.2 DRAIN CURRENT DRAIN CURRENT Ta=25℃ ID (A) VGS=2.5V 2 VGS=1.5V 1 0.8 0.4 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS 0.0 0.0 4 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE ID 1.0 RDS(ON) 800 —— VGS VGS Ta=25℃ Ta=25℃ Pulsed 700 (mΩ) 0.8 RDS(ON) VGS=1.8V 0.6 ON-RESISTANCE ON-RESISTANCE RDS(ON) (Ω) Pulsed 0.4 2.5 (V) VGS=2.5V 600 500 400 ID=0.65A 300 0.2 VGS=4.5V 0.0 0.3 200 100 0.6 0.9 1.2 DRAIN CURRENT 1.5 ID 1.8 2.1 1 (A) IS —— VSD 10 2 3 4 GATE TO SOURCE VOLTAGE VGS 5 (V) Threshold Voltage 0.8 Ta=25℃ Pulsed 0.7 VTH 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.01 1E-3 1E-4 0.0 0.4 0.8 1.2 1.6 SOURCE TO DRAIN VOLTAGE 2.0 VSD (V) 2.4 ID=250uA 0.6 0.5 0.4 0.3 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) A,Sep,2013