JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2130 TRANSISTOR (NPN) 1. EMITTER FEATURES z High DC Current Gain 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.8 A PC Collector Power Dissipation 600 mW Thermal Resistance From Junction To Ambient 208 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 45 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Collector cut-off current ICEO VCE=25V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=1V, IC=100mA VCE(sat) IC=500mA,IB=20mA 0.5 V 0.8 V Collector-emitter saturation voltage Base-emitter voltage VBE VCE=1V, IC=10mA Collector output capacitance Cob VCB=10V,IE=0, f=1MHz Transition frequency fT VCE=5V,IC=10mA 100 320 13 100 pF MHz CLASSIFICATION OF hFE RANK O Y RANGE 100-200 160-320 B,Mar,2012 Typical Characteristics Static Characteristic 150 VCE= 1V COMMON EMITTER Ta=25℃ hFE 450uA (mA) 400uA DC CURRENT GAIN IC COLLECTOR CURRENT hFE —— IC 500 500uA 100 2SC2130 350uA 300uA 250uA 200uA 50 400 o Ta=100 C 300 200 o Ta=25 C 150uA 100 100uA IB=50uA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1.0 Ta=25℃ 0.6 0.4 1 Ta=100℃ 10 COLLECTOR CURRENT VCEsat —— 300 β=25 0.8 0.1 (V) VBEsat —— IC 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0 0.01 6 IC (mA) 100 800 IC β=25 200 100 Ta=100℃ 0.2 Ta=25℃ 0.0 0.1 1 10 100 COLLECTOR CURRENT fT —— 10 Cob / Cib IC —— 200 100 IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 Cib o Ta=25 C (pF) 250 C 200 800 100 COLLECTOR CURRENT CAPACITANCE TRANSITION FREQUENCY 1 (mA) fT (MHz) 300 IC 0 0.1 800 150 100 50 Cob 10 VCE=5V o Ta=25 C 0 10 20 30 COLLECTOR CURRENT VBE —— 40 IC 1 0.1 50 IC COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) Pc 800 800 COLLECTOR CURRENT 1 10 REVERSE VOLTAGE (mA) 100 o Ta=100 C 10 Ta=25℃ 1 —— V 20 (V) Ta 700 600 500 400 300 200 100 0.1 0.2 VCE=1V 0.4 0.6 0.8 BASE-EMITTER VOLTAGE 1.0 VBE(V) 0 1.2 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 B,Mar,2012