JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO- 126C TRANSISTOR (NPN) FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649/A 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage Value Unit 180 V 2SD669 120 2SD669A 160 VEBO Emitter-Base Voltage IC Collector Current -Continuous PC 1. EMITTER V 5 V 1.5 A Collector Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO conditions Min Typ Max 180 IC=10mA, IB=0 2DS669 120 2SD669A 160 IE=1mA, IC=0 Unit V V 5 V Collector cut-off current ICBO VCB=160V, IE=0 10 µA Emitter cut-off current IEBO VEB=4V, IC=0 10 µA hFE(1) VCE=5V, IC=150mA DC current gain hFE(2) VCE(sat) Collector-emitter saturation voltage 2SD669 60 320 2SD669A 60 200 VCE=5V, IC=500mA 30 IC=500mA, IB=50mA 1 V 1.5 V Base-emitter voltage VBE VCE=5V, IC=150mA Transition frequency fT VCE=5V, IC=150mA 140 MHz VCB=10V, IE=0, f=1MHz 14 pF Cob Collector output capacitance CLASSIFICATION OF Rank Range hFE(1) B C D 2SD669 60-120 100-200 160-320 2SD669A 60-120 100-200 B,Aug,2012