JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-8L-G Plastic-Encapsulate Transistors-MOSFETS CJZM718 DFNWB3×2-8L-G PNP Transistor and N-ch MOSFET DESCRIPTIONS The CJZM718 is Integrated a 20V N-ch MOSFET with low on-state resistance, and an independently connected PNP transistor with low collector-to-emitter saturation voltage. This device is suitable for use in charging circuit and other power management. FEATURES High DC current gain Low Threshold Small package DFNWB3x2-8L-G Including a CJP718 transistor and a CJ1012 MOSFET independently in a package APPLICATIONS Charging circuit Other power management in portable equipments MARKING: front back MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit -25 V PNP Transistor VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -7.5 V Collector Current -3 A VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±6 V ID Drain Current -Continuous 0.5 A IDM Drain Current - Pulse 2 A 1 W Thermal Resistance from Junction to Ambient (note1) 175 ℃/W Thermal Resistance from Junction to Ambient (note2) 110 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ IC N-MOSFET Power Dissipation, Temperature and Thermal Resistance PD RθJA Power Dissipation A,Nov,2013 TL Lead Temperature ℃ 260 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO * Test conditions Min Typ Max Unit IC=-0.1mA, IE=0 -25 V IC=-10mA, IB=0 -25 V -7.5 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA, IC=0 Collector cut-off current ICBO VCB=-20V, IE=0 -25 nA Emitter cut-off current IEBO VEB=-6V, IC=0 -25 nA IC=-0.1A, IB=-10mA -30 mV IC=-1A, IB=-20mA -220 mV IC=-1.5A, IB=-50mA -250 mV IC=-2.5A, IB=-150mA -350 mV DC current gain Collector-emitter saturation voltage hFE * * VCE(sat) VCE=-2V, IC=-0.01A 300 VCE=-2V, IC=-0.1A 300 VCE=-2V, IC=-2A 150 VCE=-2V, IC=-6A 15 IC=-3.5A, IB=-350mA -380 mV VBE(sat) * IC=-3.5A, IB=-350mA -1.075 V Base-emitter voltage VBE(on) * VCE=-2V, IC=-3.5A -0.95 V Transition frequency fT Base-emitter saturation voltage VCE=-10V, IC=-50mA, f=100MHz 150 MHz N-ch MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250µA Zero gate voltage drain current IDSS VDS =16V, VGS = 0V 0.1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 1.2 V Drain-source on-resistance RDS(on) VGS =4.5V, ID =0.6A 0.7 Ω VGS =2.5V, ID =0.5A 0.85 Ω Forward tranconductance Diode forward voltage gfs VSD VDS =10V, ID =0.4A * 20 V 0.45 0.5 S IS=0.15A, VGS = 0V 1.2 V DYNAMIC PARAMETERS (note 3) Input Capacitance Ciss 100 pF Output Capacitance Coss 16 pF Reverse Transfer Capacitance Crss 12 pF td(on) 5 ns VDD=10V, VGEN=4.5V, RG=10Ω, 5 ns RL=47Ω, ID=0.2A 25 ns 11 ns 750 nC 75 nC 225 nC VDS =16V, VGS =0V, f =1MHz SWITCHING PARAMETERS (note 3) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Total Gate Charge tr td(off) tf Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =10V, VGS =4.5V, ID =0.25A Note: 1. When mounted on a minimum pad. 2 2. When mounted on 1 in of 2oz copper board. 3. These parameters have no way to verify. * Pulse test: pulse width≤300μs, duty cycle≤ 2% A,Nov,2013 Typical Characteristics CJZM718 PNP Transistor 3000 -0.30 -810uA (A) VCE= -2V COMMON EMITTER Ta=25℃ -900uA 1000 IC -0.25 DC CURRENT GAIN -630uA -540uA -0.20 o Ta=100 C hFE -720uA COLLECTOR CURRENT IC hFE —— Static Characteristic -0.35 -450uA -0.15 -360uA -270uA -0.10 o Ta=25 C 100 -180uA -0.05 IB=-90uA -0.00 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE 10 -0.01 -6 -0.1 (V) VCE IC —— VBE VBEsat —— IC (A) IC -1.4 -6 -6 -1 COLLECTOR CURRENT β=10 VCE=-2V BASE-EMITTER SATURATION VOLTAGE VBEsat (V) -1.2 COLLECTOR CURRENT IC (A) -1 o -0.1 Ta=100 C o Ta=25 C -1.0 Ta=25℃ -0.8 -0.6 -0.01 Ta=100℃ -0.4 -1E-3 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE VCEsat —— -1.2 -0.2 -1E-3 -1.4 VBE(V) -0.1 IC VCEsat —— -3 -6 -1 COLLECTOR CURRENT -3 IC (A) IC β=50 -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -0.01 -0.1 β=50 -0.01 β=10 -1 Ta=100℃ -0.1 Ta=25℃ Ta=25℃ -1E-3 -1E-3 -0.01 -0.1 COLLECTOR CURRENT -1 IC (A) -6 -0.01 -1E-3 -0.01 -0.1 COLLECTOR CURRENT -1 IC -6 (A) A,Nov,2013 fT 300 —— Cob / Cib IC VCB / VEB —— 1000 o Ta=25 C 250 (pF) Cib C 200 CAPACITANCE TRANSITION FREQUENCY fT (MHz) f=1MHz IE=0 / IC=0 150 100 50 100 Cob VCE=-10V o Ta=25 C 0 -0 -20 -40 -60 COLLECTOR CURRENT Pc COLLECTOR POWER DISSIPATION Pc (W) 1.2 —— -80 IC -100 (mA) 10 -0.1 -1 REVERSE BIAS VOLTAGE -10 V (V) Ta 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) A,Nov,2013 Typical Characteristics CJZM718 MOSFET Output Characteristics 5 Transfer Characteristics 500 Ta=25℃ 5.5V VDS=16V Pulsed Pulsed 4.5V 4 400 (mA) ID 3 DRAIN CURRENT DRAIN CURRENT ID (A) 3.5V 2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 2.5 VDS 0 0.0 3.0 0.5 1.0 (V) 1.5 2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) 500 —— 2.5 VGS 3.0 (V) VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 450 300 RDS(ON) RDS(ON) 400 ON-RESISTANCE (mΩ) (mΩ) 500 200 ON-RESISTANCE VGS=2.5V VGS=4.5V 350 ID=0.6A 300 250 100 0 100 200 200 300 400 500 DRAIN CURRENT 500 400 600 ID 700 0 800 2 4 6 8 GATE TO SOURCE VOLTAGE (mA) IS —— VSD VGS 10 (V) Threshold Voltage 1.00 Ta=25℃ Pulsed 0.95 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (mA) (V) 100 10 1 0.90 ID=250uA 0.85 0.80 0.75 0.1 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 VSD (V) 1.2 0.70 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) A,Nov,2013