JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS 2SK3541 N-Channel MOSFET SOT-723 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Drive circuits can be simple z Parallel use is easy 1. GATE 2. SOURCE 3. DRAIN APPLICA TIONS Interfacing , Switching MARKING:KN KN &KLS6L]HPPPP *A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Units Drain-source voltage VDS 30 Gate-source voltage VGS ±20 Continuous drain current ID ±100 mA Power dissipation PD 0.15 W RθJA 833 ℃/W Junction temperature TJ 150 Storage temperature Tstg -55 ~+150 Thermal resistance from junction to ambient V ℃ * Pw≤10µs ,Duty cycle≤1% B,Oct,2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Drain-source breakdown voltage Symbol Test Condition Min Typ Max 30 Unit V(BR) DSS VGS = 0V, ID =10µA V Gate-source leakage current IGSS VDS =0V, VGS =±20V ±1 µA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1.0 µA Gate threshold voltage VGS(th) VDS =3V, ID =100µA 1.5 V Static drain-source on-state resistance RDS(on) 0.8 VGS =4V, ID =10mA 5 8 VGS =2.5V, ID =1mA 7 13 gFS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 4 Turn-on delay time td(on) 15 Rise time Turn-off delay time Fall time tr td(off) tf VDS =3V, ID =10mA 20 Forward transconductance Ω mS 13 VDS =5V,VGS =0V,f =1MHz 9 VGS=5V,VDD=5V, ID =10mA 35 RL=500Ω,RG=10Ω 80 pF ns 80 B,Oct,2011 2SK3541 Typical Characteristics Output Characteristics Transfer Characteristics 0.20 200 4.0V Ta=25℃ 100 0.15 (mA) 30 ID VGS=2.5V 0.10 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=3.0V 3.5V Pulsed 0.05 10 3 1 VGS=2.0V VDS=3V 0.3 Ta=25℃ VGS=1.5V Pulsed 0.00 0.1 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 (V) 1 4 (V) 15 Ta=25℃ Ta=25℃ Pulsed Pulsed ( ) ( ) 10 RDS(ON) 40 ON-RESISTANCE RDS(ON) 3 VGS RDS(ON) —— VGS RDS(ON) —— ID 60 ON-RESISTANCE 2 GATE TO SOURCE VOLTAGE 20 VGS=2.5V ID=100mA 5 ID=50mA VGS=4V 0 0 3 1 10 DRAIN CURRENT IS 100 30 —— ID 200 (mA) 0 5 10 GATE TO SOURCE VOLTAGE 15 VGS 20 (V) VSD 200 VGS=0V 100 Ta=25℃ Pulsed SOURCE CURRENT IS (mA) 30 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 1.0 VSD (V) B,Oct,2011