JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT3946 COMPLEMENTARY NPN/PNP TRANSISTOR SOT-363 FEATURES z Complementary Pair z One 3904-Type NPN One 3906-Type PNP z Epitaxial Planar Die Construction z Ideal for Low Power Amplification and Switching 1 MAKING: K46· MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ NPN 3904 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test Collector-base breakdown voltage Parameter V(BR)CBO IC = 10μA, conditions Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 IE=0 IB=0 Min Max 60 Unit V 40 V 5 V Collector cut-off current ICBO VCB= 30 V , IE=0 0.05 μA Collector cut-off current ICEO VCE= 30 V , IB=0 0.5 μA 0.05 μA Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency IEBO VEB= 5V , IC=0 hFE(1) VCE= 1V, IC= 0.1mA 40 hFE(2) VCE= 1V, IC= 1mA 70 hFE(3) VCE= 1V, IC= 10mA 100 hFE(4) VCE= 1V, IC= 50mA 60 hFE(5) VCE= 1V, IC= 100mA 30 VCE(sat)1 IC=10 mA, IB= 1mA VCE(sat)2 IC=50 mA, IB= 5mA VBE(sat)1 IC= 10 mA, IB= 1mA VBE(sat)2 IC= 50 mA, IB= 5mA fT Noise figure NF Output capacitance Cob Delay time td Rise time tr Storage time tS Fall time tf VCE=20V,IC=20mA, f=100MHz VCE=5V,Ic=0.1mA, f=1KHz,Rg=1KΩ VCB=5V,IE=0,f=1MHz 0.65 300 0.2 V 0.3 V 0.85 V 0.95 V 300 MHz 5 dB 4 pF VCC=3V, VBE=0.5V IC=10mA , IB1=- IB2=1mA 35 nS 35 nS VCC=3V, IC=10mA IB1=-IB2= 1mA 200 nS 50 nS A,Jun,2011 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Parameter Value Units VCBO Symbol Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO -5 V IC Emitter-Base Voltage Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ PNP 3906 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.05 μA hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-50mA 60 hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.85 V VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure fT VCE=-20V,IC=-10mA,f=100MHz Cob VCB=-5V,IE=0,f=1MHz NF VCE=-5V,Ic=-0.1mA, f=1KHz,Rg=1KΩ Delay time td Rise time tr Storage time tS Fall time tf VCC=-3V, VBE=-0.5V IC=-10mA , IB1=-IB2=-1mA VCC=-3V, IC=-10mA IB1=-IB2=- 1mA -0.65 300 250 MHz 4.5 pF 4 dB 35 nS 35 nS 225 nS 75 nS A,Jun,2011