JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 3DD13003 TO-126C TRANSISTOR (NPN) FEATURES 1.BASE High total power disspation 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage Value 700 Unit V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.25 W TJ Junction T emperature 150 ℃ Tstg Storage Temperature 3.EMITTER ℃ -55~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V= IC =1mA, IE 0 (BR)CBO 700 V Collector-emitter breakdown voltage V(BR)CEO = IC=10mA, IB 0 400 V 9 V Emitter-base breakdown voltage = V(BR)EBO IE=1mA, IC 0 Collector cut-off current I= VCB=700V,IE 0 CBO 1 mA Collector cut-off current I= VCE=400V,IB 0 CEO 0.5 mA 1 mA Emitter cut-off current = IEBO VEB=9V, IC 0 DC current gain hFE(1) VCE=5V, IC= 0.5 A 8 hFE(2) VCE=5V, IC= 1.5A 5 40 Collector-emitter saturation voltage = VCE(sat) IC=1A,IB 0.25A 1 V Base-emitter saturation voltage = VBE(sat) IC=1A,IB 0.25A 1.2 V Transition frequency fT VCE=10V,Ic=100mA, f =1MHz Fall time tf IC=1A, IB1=-IB2=0.2A, = VCC 100V Storage time ts Base-emitter voltage &/$66,),&$7,212) hFE 5 MHz = VBE IE 2A 0.5 µs 2.5 μs 3 V 5DQN 5DQJH 8-10 10-15 15-20 20-25 25-30 30-35 35-40 B,Dec,2011 Typical Characteristics 3DD13003 Static Characteristic 800 COMMON EMITTER Ta=25℃ 30mA Ta=25℃ DC CURRENT GAIN 21mA IC IC Ta=100℃ 24mA 18mA 15mA 400 —— hFE (mA) 27mA 600 COLLECTOR CURRENT hFE 100 12mA 9mA 200 10 6mA COMMON EMITTER VCE= 5V IB=3mA 0 1 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1 IC 1000 Ta=25℃ Ta=100 ℃ β=4 100 1 10 IC —— IC 100 VCEsat —— 100 IC 1000 1500 (mA) IC Ta=100 ℃ Ta=25℃ β=4 10 1 1000 1500 100 COLLECTOR CURREMT 10 COLLECTOR CURRENT 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 2000 8 VCE (V) 10 100 COLLECTOR CURREMT (mA) VBE fT 10 —— 1000 1500 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 100 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) 1500 1000 IC 10 COMMON EMITTER VCE=5V 1 0.0 COMMON EMITTER VCE=10V Ta=25℃ 1 0.3 0.6 0.9 1.2 20 5000 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (W) Ta=25 ℃ Cib CAPACITANCE C (pF) 1000 100 Cob 10 1 0.1 PC 1.50 f=1MHz IE=0/IC=0 200 100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) —— IC (mA) Ta 1.25 1.00 0.75 0.50 0.25 0.00 1 REVERSE VOLTAGE 10 V (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Dec,2011