JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor SOT-23 General Description The CJ3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. 1. GATE 2. SOURCE 3. DRAIN MARKING: 3407 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Value -30 Unit V VGS ±20 V Continuous Drain Current ID -4.1 A Power Dissipation PD 350 mW RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55~+150 ℃ Thermal Resistance from Junction to Ambient A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS =-10V, ID =-4.1A 60 mΩ VGS =-4.5V, ID =-3A 87 mΩ Drain-source on-resistance (note 1) Forward tranconductance (note 1) Gate threshold voltage Diode forward voltage (note 1) RDS(on) gFS VGS(th) VSD -30 VDS =-5V, ID =-4A 5.5 VDS =VGS, ID =-250µA -1 V S IS=-1A,VGS=0V -3 V -1 V Dynamic characteristics (note 2) Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss 75 pF td(on) 8.6 ns VGS=-10V,VDS=-15V, 5.0 ns RL=3.6Ω,RGEN=3Ω 28.2 ns 13.5 ns VDS =-15V,VGS =0V,f =1MHz Switching Characteristics (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes: 1. 2. Pulse test: Pulse width ≤300µs, duty cycle ≤2%. These parameters have no way to verify. A,Dec,2010 CJ3407 Typical Characteristics Output Characteristics Transfer Characteristics -25 -5 VGS=-10V Ta=25℃ VGS=-4.5V -8V -5V -20 -4 VGS=-3.5V -10 ID -15 -3 DRAIN CURRENT DRAIN CURRENT ID (A) (A) VGS=-4V -2 -5 -1 -0 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS -5 -0 (V) -1 -2 GATE TO SOURCE VOLTAGE -3 VGS -4 (V) RDS(ON) —— VGS —— ID 100 140 Ta=25℃ Ta=25℃ 120 (mΩ) (mΩ) 80 100 RDS(ON) 60 ON-RESISTANCE ON-RESISTANCE RDS(ON) VGS=-4.5V VGS=-10V 40 80 ID=-4.3A 60 40 20 20 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 -10 (A) -2 -4 -6 GATE TO SOURCE VOLTAGE -8 VGS -10 (V) VSD -10 Ta=25℃ -0.1 SOURCE CURRENT IS (A) -1 -0.01 -1E-3 -1E-4 -1E-5 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE -1.0 VSD -1.2 (V) A,Dec,2010