JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS NCE4503 N-and P-Channel Enhancement Mode Power MOSFET SOP8 DESCRIPTION Advance Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device desigh, low on-resistance and cost -effectiveness. The SOP8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. z 8 D1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 1 G1 MARKING: 4503 Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 6.9 -6.3 5.5 -5 20 -20 Continuous Drain Current a Ta=25℃ Ta=70℃ Pulsed Drain Current b ID IDM Unit V A PD 2.0 W RθJA 62.5 ℃/W Operating Junction Temperature TJ 150 Storage Temperature TSTG -55 ~+150 Power Dissipation Thermal Resistance from Junction to Ambient ℃ Notes : a. These tests are performed with infinite heat sink. b.Pulse width by Max.junction temperature. B,Mar,2013 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage Gate-threshold voltage V(BR)DSS VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS Drain-source on-resistancec RDS(on) Forward transconductance gfs Diode forward voltagec VSD VGS=0, ID =250µA N-Ch 30 VGS=0, ID =-250µA P-Ch -30 VDS =VGS, ID =250µA N-Ch 1 3 VDS =VGS, ID =-250µA P-Ch -1 -3 VDS =0V, VGS =±20V V N-Ch ±100 P-Ch VDS =30V, VGS =0V N-Ch 1 VDS =-30V, VGS =0V P-Ch -1 VGS =10V, ID =6A N-Ch 0.028 VGS =-10V, ID =-6A P-Ch 0.036 VGS =4.5V, ID =4A N-Ch 0.042 VGS =-4.5V, ID =-4A P-Ch 0.055 VDS =10V, ID =6A N-Ch VDS =-10V, ID =-6A P-Ch IS=1.7A,VGS=0V N-Ch 1.2 IS=-1.7A,VGS=0V P-Ch -1.2 N-Ch 13.5 N-Channel P-Ch 20 VDS =24V,VGS =4.5V,ID =6A N-Ch 1.4 P-Channel P-Ch 2 VDS =-24V,VGS =-4.5V,ID =-6A N-Ch 4.7 P-Ch 7 N-Ch 5 N-Channel P-Ch 8 VDS=20V,RD=20Ω, ID=1A, N-Ch 8 VGS=10V,RG=3.3Ω P-Ch 7 P-Channel N-Ch 18.5 VDS=-15V,RD=15Ω, ID=-1A, P-Ch 34 VGS=-10V,RG=3.3Ω N-Ch 9 P-Ch 26 4 V nA µA Ω S V Dynamic Total gate chargec Qg Gate-source charged Qgs Gate-drain charged Qgd Turn-on delay timec td(on) Rise timed tr d Turn-off delay time Fall timed td(off) tf Input Capacitanced Ciss Output Capacitanced Coss Reverse Transfer Capacitanced Crss nC ns N-Ch 770 N-Channel P-Ch 1380 VDS =25V,VGS =0V,f =1MHz N-Ch 80 P-Channel P-Ch 150 VDS =-25V,VGS =0V,f =1MHz N-Ch 75 P-Ch 140 pF Notes : c. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. d. Guaranteed by design, not subject to production testing. B,Mar,2013 Typical Characteristics NCE4503-N-Ch Output Characteristics Transfer Characteristics 20 10 VGS=10V 7.0V 5.0V 4.5V Ta=25℃ Pulsed Ta=25℃ Pulsed VGS=3.0V 8 VGS=2.5V 5 ID 10 6 DRAIN CURRENT DRAIN CURRENT ID (A) (A) 15 4 2 VGS=2.0V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS RDS(ON) —— (mΩ) VGS=10V 10 10 DRAIN CURRENT IS —— 4 (V) VGS Ta=25℃ Pulsed 60 20 (A) 40 ID=6.0A 20 0 0 4 8 12 GATE TO SOURCE VOLTAGE 16 VGS 20 (V) VSD Ta=25℃ Pulsed 1 SOURCE CURRENT IS (A) 10 15 ID 3 VGS RDS(ON) VGS=4.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 20 5 2 80 Ta=25℃ Pulsed 0 1 GATE TO SOURCE VOLTAGE ID —— 15 0 (V) 25 5 0 5 0.1 0.01 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 VSD 1.2 (V) B,Mar,2013 Typical Characteristics NCE4503-P-Ch Output Characteristics -20 Ta=25℃ Pulsed Transfer Characteristics -10 VGS=-10V、-7.0V、-5.0V、-4.5V -8 VGS=-3.0V -5 ID -10 -6 DRAIN CURRENT DRAIN CURRENT ID (A) (A) -15 Ta=25℃ Pulsed -4 -2 VGS=-2.5V -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) -4 VDS -0 -5 -0 (V) -1 ID —— -2 RDS(ON) —— 40 -3 GATE TO SOURCE VOLTAGE VGS -4 (V) VGS 80 Ta=25℃ Pulsed Ta=25℃ Pulsed VGS=-4.5V RDS(ON) 25 ON-RESISTANCE ON-RESISTANCE (mΩ) 30 VGS=-10V 20 60 RDS(ON) (mΩ) 35 40 ID=-6.0A 20 15 10 -0 -5 -10 DRAIN CURRENT IS —— ID -20 (A) 0 -0 -4 -8 -12 GATE TO SOURCE VOLTAGE -16 VGS -20 (V) VSD Ta=25℃ Pulsed -1 SOURCE CURRENT IS (A) -10 -15 -0.1 -0.01 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE -1.0 VSD -1.2 (V) B,Mar,2013