JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURE · Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA ,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 60 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA DC current gain hFE VCE=6V, IC=2mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency Output capacitance Cob Noise Figure NF 70 IC= 100mA, IB=10mA VCE=10V, IC= 1mA 700 0.1 0.25 V 80 VCB=10V, IE=0,f=1 MHz VCE=6V,IC=0.1mA,f=1kHz, Rg=10kΩ MHz 2.0 3.5 pF 1.0 10 dB CLASSIFICATION OF hFE Rank Range Marking O Y GR BL 70-140 120-240 200-400 350-700 LO LY LG LL B,Dec,2011 2SC2712 Typical Characterisitics Static Characteristic —— IC hFE 400 10 COMMON EMITTER VCE=6V COMMON EMITTER Ta=25℃ (mA) 8 50uA 300 hFE 40uA 6 DC CURRENT GAIN COLLECTOR CURRENT IC 45uA 35uA 30uA 4 25uA 20uA 15uA 2 Ta=100℃ Ta=25℃ 200 100 10uA IB=5uA 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 0.3 VCE 0 0.5 10 1 10 (V) 100 COLLECTOR CURRENT —— IC 150 (mA) —— IC VBEsat 1.2 IC BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 0.2 Ta=100℃ 0.1 Ta=25℃ Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 0.0 0.0 1 10 100 COLLECTOR CURRENT IC 150 (mA) 100 COLLECTOR CURRENT —— VBE fT 1000 —— IC 150 (mA) IC (MHz) fT Ta=100℃ 10 TRANSITION FREQUENCY IC COLLECTOR CURRENT 150 10 COMMON EMITTER VCE=6V (mA) 100 IC 1 Ta=25℃ 1 100 COMMON EMITTER VCE=10V o Ta=25 C 0.1 0.2 10 0.4 0.6 0.8 1 1.0 100 Cob/ Cib 10 3 30 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) —— VCB/ VEB Pc —— IC 70 (mA) Ta 200 f=1MHz IE=0/ IC=0 COLLECTOR POWER DISSIPATION Pc (mW) Ta=25℃ 10 CAPACITANCE C (pF) Cib Cob 1 0.1 0.2 150 100 50 0 1 REVERSE VOLTAGE 10 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150 B,Dec,2011