WBFBP-02C Plastic-Encapsulate Diodes DTESD5V0LED02

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-02C Plastic-Encapsulate Diodes
DTESD5V0LED02
WBFBP-02C
ESD Protection Diodes
(1.0×0.6×0.5)
unit: mm
DESCRIPTION
The DTESD5V0LED02 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z Stand−off Voltage: 3.3 V−12 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) per Human Body Model
z IEC61000−4−2 Level 4 ESD Protection
z These are Pb−Free Devices
MARKING:B
Maximum Ratings @TA=25℃
Parameter
Symbol
IEC61000−4−2(ESD)
ESD voltage
Limits
Unit
±30
KV
16
KV
400
V
PD
100
mW
RΘJA
1250
℃/W
TL
260
℃
Tj, Tstg
-55 ~ +150
℃
Contact
Per Human Body Model
Per Machine Model
Total power dissipation on FR-5 board (Note 1)
Thermal Resistance Junction−to−Ambient
Lead Solder Temperature − Maximum (10 Second Duration)
Junction and Storage temperature range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
A,May,2011
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
Max
IR (μA)
Device
VRWM (V)
@ VRWM
Device*
VBR (V)
@ IT(Note 2)
IPP(A)
IT
(Note 3)
Marking
VC (V) @Max
Ppk (W)
IPP (A) (Note 3)
(8 x 20μs)
C (pF)
Max
Max
Min
Max
mA
-
Max
Typ
Typ
DTESD3V3LED02
A
3.3
2.5
5.0
5.9
1.0
9.8
11.4
102
80
DTESD5V0LED02
B
5.0
1.0
6.2
7.3
1.0
8.7
12.3
107
65
DTESD7V0LED02
X7
7.0
1.0
7.5
8.7
1.0
8.0
15.1
115
55
DTESD12VLED02
C
12
1.0
13.5
15.6
1.0
5.9
23.7
140
30
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Surge current waveform per Figure 3.
A,May,2011