JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power Management Dual-transistors UMF21N TRANSISTOR SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA2018 and DTC114E are housed independently in a package. z Power switching circuit in a single package. z Mounting cost and area can be cut in half. 1 z APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) Equivalent Circuit (3) (2) DTr2 MARKING:F21 (1) F21 Tr1 R1 R2 (4) (5) (6) TR1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector- Base Voltage -15 V VCEO Collector-Emitter Voltage -12 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.5 A PC Collector Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ DTR2 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 50 IC(MAX) 100 Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA A,Dec,2010 TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -15 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -6 V Collector cut-off current ICBO VCB= -15 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=- 6V, IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC=-10mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob 270 680 IC=-200mA,IB=-10mA -0.25 V VCE=-2V,IC=-10mA, f=100MHz 260 MHz VCB=-10V,IE=0,f=1MHz 6.5 pF DTR2 Electrical Characteristics (Ta=25 ℃) Parameter Input voltage Symbol Min. Typ VI(off) VI(on) Max. 0.5 3 Unit V Conditions VCC=5V ,IO=100μA VO=0.3V ,IO=10 mA Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 μA VCC=50V, VI=0 DC current gain GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT VO=5V ,IO=5mA 250 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz A,Dec,2010