JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301 P-Channel 20-V(D-S) MOSFET SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.3 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation Unit V A PD 0.35 W R θJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s) ℃ B,Apr,2012 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 -1 V Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance a Forward transconductance RDS(on) a gfs VGS =-4.5V, ID =-2.8A 0.090 0.112 VGS =-2.5V, ID =-2.0A 0.110 0.142 VDS =-5V, ID =-2.8A 6.5 Ω S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 405 VDS =-10V,VGS =0V,f =1MHz pF 75 55 VDS =-10V,VGS =-4.5V,ID =-3A VDS =-10V,VGS =-2.5V,ID =-3A 5.5 10 3.3 6 0.7 nC 1.3 f =1MHz VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω 6.0 Ω 11 20 35 60 30 50 10 20 ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage a IS -1.3 TC=25℃ -10 ISM VSD A IS=-0.7A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. B,Apr,2012 CJ2301 Typical Characteristics Output Characteristics -14 Transfer Characteristics -10 VGS= -4.0V,-3.5V,-3.0V,-2.5V Ta=25℃ Pulsed Ta=25℃ Pulsed VGS=-2.0V -12 -8 (A) -6 VGS=-1.5V -4 ID -8 -6 DRAIN CURRENT DRAIN CURRENT ID (A) -10 -4 -2 -2 VGS=-1.0V -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -0 -0.0 -4 (V) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE ID RDS(ON) 150 —— -2.0 VGS VGS 250 Ta=25℃ Ta=25℃ Pulsed Pulsed 60 RDS(ON) VGS=-2.5V 90 ON-RESISTANCE RDS(ON) (mΩ) 200 (mΩ) 120 ON-RESISTANCE -2.5 (V) VGS=-4.5V 30 0 -0 -2 -4 -6 DRAIN CURRENT IS —— ID -8 -10 (A) 150 100 ID=-3.6A 50 0 -0 -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) VSD -1 Ta=25℃ Pulsed -0.1 SOURCE CURRENT IS (A) -0.3 -0.03 -0.01 -3E-3 -1E-3 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE -1.0 VSD -1.2 (V) B,Apr,2012