JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3406 N-Channel Enhancement Mode Field Effect Transistor SOT-23 DESCRIPTION The CJ3406 use advanced trench technology to provide excellent 1. GATE 2. SOURCE 3. DRAIN RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: R6 Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 3.6 A Drain Current-Pulsed (note 1) IDM 15 A Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 2) RDS(on) 30 V 1 µA ±100 nA 3 V VGS =10V, ID =3.6A 65 mΩ VGS =4.5V, ID =2.8A 105 mΩ Forward tranconductance (note 2) gFS VDS =5V, ID =3.6A Diode forward voltage VSD IS=1A 1 3 S 1 V 375 pF DYNAMIC PARAMETERS (note 3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =15V,VGS =0V,f =1MHz 57 pF 39 pF VDS =0V,VGS =0V,f =1MHz 6 Ω SWITCHING PARAMETERS (note 3) Turn-on delay time td(on) Turn-on rise time Turn-off delay time 4.6 ns tr VGS=10V,VDS=15V, 1.9 ns td(off) RL=2.2Ω,RGEN=3Ω 20.1 ns 2.6 ns Turn-off fall time tf Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Pulse Test : Pulse width ≤300µs, duty cycle≤ 0.5%. 3. These parameters have no way to verify. A,Dec,2010