SOT-23 Plastic-Encapsulate Diodes 1SS226

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Plastic-Encapsulate Diodes
SOT-23
SOT-23
1SS226
SWITCHING DIODE
FEATURES
z
Low forward voltage
z
Fast reverse recovery time
z
Small total capacitance
1
3
2
MARKING: C3
Maximum Ratings ,Single Diode @Ta=25℃
Parameter
Symbol
Limit
Unit
85
Non-Repetitive Peak Reverse Voltage
VRM
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
V
80
V
DC Blocking Voltage
VR
Forward Continuous Current
IFM
300
mA
Average Rectified Output Current
IO
100
mA
Peak Forward Surge Current @t=10ms
2
IFSM
A
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Symbol
Test
V(BR)
IR= 100uA
conditions
Min
Max
80
Unit
V
Reverse voltage leakage current
IR
VR=80V
0.5
uA
Forward voltage
VF
IF=100mA
1.2
V
Diode capacitance
CD
VR=0V , f=1MHz
3
pF
Reverse recovery time
t rr
IF=10mA
4
ns
A,Jun,2011
Typical Characteristics
Forward
100
Characteristics
1SS226
Reverse
1000
Characteristics
(mA)
Ta=100℃
(nA)
REVERSE CURRENT IR
1
Ta
=2
5℃
FORWARD CURRENT
IF
Ta
=1
00
℃
10
0.1
0.01
0.0
0.2
0.4
0.6
FORWARD VOLTAGE
0.8
VF
1.0
Ta=25℃
10
1
1.2
0
20
(V)
40
REVERSE VOLTAGE
Capacitance Characteristics
1.2
100
60
VR
80
(V)
Power Derating Curve
200
(mW)
150
PD
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ta=25℃
f=1MHz
1.0
0.8
0
5
10
REVERSE VOLTAGE
15
VR
(V)
20
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃)
A,Jun,2011