JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-553 Plastic-Encapsulate Transistors EMY1 General purpose transistors (dual transistors) SOT-553 FEATURES z Includes a 2SA1037AK and a 2SC2412K transistor in a package z PNP and NPN transistors have common emitters z Mounting cost and area can be cut in half 1 Marking: Y1 (3) Equivalent circuit (2) Tr2 (4) (1) Tr1 (5)/(6) Tr1 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -6 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -0.1 μA DC current gain hFE VCE=-6V, IC=-1mA Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat) fT Cob 120 560 IC=-50mA, IB=-5mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, IE=0, f=1MHz -0.50 140 V MHz 5 A,Dec,2010 pF Tr2 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current 150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 7 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V, IC=0 0.1 μA DC current gain hFE VCE=6V, IC=1mA Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat) fT Cob 120 560 IC=50mA, IB=5mA VCE=12V, IC=2mA, f=100MHz VCB=12V, IE=0, f=1MHz 0.4 180 V MHz 3.5 A,Dec,2010 pF