JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CESD3V3AP SOT-23 ESD Protection Diode DESCRIPTION The CESD3V3AP is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. 1 1 3 2 FEATURES z Stand−off Voltage: 3.3 V−12 V z Low Leakage z Response Time is Typically < 1 ns z ESD Rating of Class 3 (> 16 kV) per Human Body Model z IEC61000−4−2 Level 4 ESD Protection z These are Pb−Free Devices Maximum Ratings @Ta=25℃ Parameter Symbol IEC61000−4−2(ESD) ESD voltage Air Contact Limit ±15 ±8.0 per human body model Unit KV 16 KV PD 225 mW RΘJA 556 ℃/W Lead Solder Temperature − Maximum (10 Second Duration) TL 260 ℃ Junction and Storage Temperature Rang Tj, Tstg -55 ~ +150 ℃ Total power dissipation on FR-5 board (Note 1) Thermal Resistance Junction−to−Ambient Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. A,May,2011 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C Max. Capacitance @VR=0 and f =1MHz ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types) IR (μA) Device VRWM (V) @ VRWM Device* VBR (V) VC @ IT(Note 2) C (pF) Max IPP + IT Ppk + (W) @IPP =1 A Pin 1 to 3 Marking Max Max Min Max mA V A Max Typ CESD3V3AP 3M3 3.3 10 5.0 5.9 1.0 7.5 13.3 300 150 CESD5V0AP 5M 5 10 6.2 7.3 1.0 9.8 12 300 110 CESD12VAP 12M 12 1.0 13.3 15.75 1.0 19 11.2 300 60 *Other voltages available upon request. +Surge current waveform per Figure 3 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. A,May,2011