JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW65 TRANSISTOR (NPN) SOT–23 FEATURE z General Purpose Transistor 1. BASE MARKING: 2. EMITTER BCW65A: EA 3. COLLECTOR BCW65B: EB BCW65C:EC MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 225 mW Thermal Resistance from Junction to Ambient 556 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA A,Feb,2014 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=32V, IE=0 0.02 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.02 µA BCW65A BCW65B/BCW65C BCW65A BCW65B/BCW65C DC current gain conditions hFE(1)* VCE=10V, IC=100μA hFE(2) * VCE=1V, IC=10mA BCW65A BCW65B hFE(3) * VCE=1V, IC=100mA BCW65C BCW65A BCW65B/BCW65C hFE(4) * Collector-emitter saturation voltage VCE(sat) * Base-emitter saturation voltage VBE(sat) * fT Transition frequency VCE=2V, IC=500mA Min Typ Max Unit 35 80 75 180 100 250 160 400 250 630 35 100 IC=100mA, IB=10mA 0.3 V IC=500mA, IB=50mA 0.7 V IC=500mA, IB=50mA 2 V VCE=10V,IC=20 mA, f=100MHz 100 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 12 pF Collector input capacitance Cib VEB=0.5V, IC=0, f=1MHz 80 pF Noise figure NF 10 dB VCE =5V, IC=0.2mA, RS = 1kΩ, f =1kHz, BW=200 Hz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. A,Feb,2014