JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power management Dual-transistors UMZ1N TRANSISTOR SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA1037AK and 2SC2412K are housed independently in a package z Transistor elements independent, eliminating interference z Mounting cost and area can be cut in half z MARKING: Z1 Z1 TR1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit VCBO Collector- Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.15 A PC Collector Power Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TR2 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol Parameter Value Unit VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.15 A PC Collector Power Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ B,May,2013 TR1 NPN ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 120 560 IC=50mA,IB=5mA 0.4 VCE=12V,IC=2mA,f=100MHz 180 VCB=12V,IE=0,f=1MHz 2.0 V MHz 3.5 pF Max Unit TR1 PNP ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-1mA Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob 120 560 IC=-50mA,IB=-5mA VCE=-12V,IC=-2mA,f=100MHz VCB=-12V,IE=0,f=1MHz -0.5 140 V MHz 5 pF B,May,2013