JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 1SS193 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time 1 MARKING: F3 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit VRM 85 V DC Blocking Voltage VR 80 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 100 mA Power Dissipation PD 150 mW Non-Repetitive Peak Reverse Voltage Storage Temperature Range 150 TJ Junction Temperature ℃ -55~+150 TSTG ℃ Electrical Characteristics @Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse current Symbol V (BR) Min Typ Max 80 Unit Conditions V IR=100μA VF1 0.60 V IF=1mA VF2 0.72 V IF=10mA VF3 0.90 1.2 V IF=100mA IR1 0.1 uA VR=30V IR2 0.5 uA VR=80V Capacitance between terminals CT 0.9 3.0 pF VR=0,f=1MHz Reverse recovery time t rr 1.6 4.0 ns IF=IR=10mA,Irr=0.1×IR A,May,2011 Typical Characteristics Forward 100 Characteristics 1SS193 Reverse 1000 30 Ta=100℃ 300 (mA) Characteristics REVERSE CURRENT IR Ta =2 5℃ Ta =1 00 ℃ IF 3 FORWARD CURRENT (nA) 10 1 0.3 0.1 100 30 Ta=25℃ 10 3 0.03 0.01 0.0 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 40 REVERSE VOLTAGE Capacitance Characteristics 1.2 20 (V) 60 VR 80 (V) Power Derating Curve 200 (mW) 150 PD 1.1 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 1.0 0.9 0.8 100 50 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) A,May,2011