JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ B5818WS:SK B5819WS: SL Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Symbol B5817WS B5818WS B5819WS Unit Non-repetitive peak reverse voltage VRM 20 30 40 V Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 20 30 40 V RMS reverse voltage VR(RMS) 14 21 28 V Average rectified output current IO 1 A Peak forward surge current @t=8.3ms IFSM 9 A Repetitive peak forward current IFRM 1.5 A Pd 250 mW Thermal resistance junction to ambient RθJA 400 ℃/W Junction temperature TJ 125 ℃ Storage temperature TSTG -55~+150 ℃ Parameter Power dissipation ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test IR= 1mA Reverse breakdown voltage Reverse voltage leakage current V(BR) IR VR=20V VR=30V VR=40V B5817WS Forward voltage VF B5818WS B5819WS Diode capacitance CD conditions B5817WS B5818WS B5819WS B5817WS B5818WS B5819WS Min Max 20 30 40 V 1 IF=1A 0.45 IF=3A 0.75 IF=1A 0.55 IF=3A 0.875 IF=1A 0.6 IF=3A 0.9 VR=4V, f=1MHz Unit 120 mA V V V pF C,Oct,2013 B5819WS Typical Characteristics Forward Reverse Characteristics Ta=100 ℃ REVERSE CURRENT IR T =2 a 5℃ T= a 10 0℃ IF (mA) (A) 1 FORWARD CURRENT Characteristics 10 3 0.1 1 0.1 Ta=75 ℃ 0.01 Ta=25 ℃ 0.01 0.0 1E-3 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 0 10 20 30 REVERSE VOLTAGE (V) Capacitance Characteristics VR 40 (V) Power Derating Curve 160 300 Ta=25℃ f=1MHz (mW) 250 PD 120 100 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 140 80 60 40 200 150 100 50 20 0 0 0 5 10 15 REVERSE VOLTAGE 20 VR (V) 25 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) C,Oct,2013