JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB520S-30 SOD-523 Schottky barrier Diode FEATURE z Small surface mounting type z Low IR z High reliability MARKING: B Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit DC reverse voltage VR 30 V Mean rectifying current IO 200 mA Peak forward surge current IFSM 1 A Power dissipation PD 150 mW RθJA 667 ℃/W Junction temperature Tj 125 ℃ Storage temperature Tstg Thermal resistance junction to ambient Unit ℃ -55~+150 Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Forward voltage VF 0.6 V Reverse current IR 1 μA Conditions IF=200mA VR=10V B,Aug,2012 Typical Characteristics Forward 1000 RB520S-30 Reverse Characteristics o Ta=100 C 100 100 Ta =2 5 o C Ta =1 00 o C 10 REVERSE CURRENT IR (uA) (mA) IF FORWARD CURRENT Characteristics 1000 1 0.1 0.01 10 o Ta=25 C 1 0.1 0 100 200 300 400 FORWARD VOLTAGE 500 VF 600 700 800 0 5 10 (mV) 15 20 REVERSE VOLTAGE VR 25 30 (V) Power Derating Curve Capacitance Characteristics 100 200 (mW) 150 PD 30 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz 10 3 1 100 50 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) B,Aug,2012 A,May,2011