JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTC4379 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES z Low saturation voltage z High speed switching time z Complementary to KTA1666 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=2V, IC=500mA 70 hFE(2) VCE=2V, IC=1.5A 40 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 V DC current gain fT Transition frequency Collector output capacitance Switching Time Cob Turn on Time ton Storage Time tstg Fall Time 240 VCE=2V, IC=500mA 120 MHz VCB=10V, IE=0, f=1MHz 30 pF 0.1 VCC=30V, IC=1A, IB1=-IB2=-0.05A 1.0 μs 0.1 tf CLASSIFICATION OF hFE(1) Rank Range Marking O Y 70-140 120-240 UO UY A,Jun,2011