JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 2SA1980 Plastic-Encapsulate Transistors TRANSISTOR (PNP) TO-92 FEATURES z Low Collector Saturation Voltage: VCE(sat) =-0.3V(Max.) 1. EMITTER z Low Output Capacitance : Cob =4pF (Typ.) 2. COLLECTOR z Complementary Pair with 2SC5343 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Collector cut-off current ICEO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-2mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency 70 IC=-100mA,IB=-10mA -0.3 VCE=-10V,IC=-1mA 80 Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz Noise figure NF VCE=-6V,IC=-0.1mA,f=1KHZ,RS=10KΩ CLASSIFICATION OF Rank Range 700 V MHz 4 7 pF 10 dB hFE O Y G L 70-140 120-240 200-400 300-700 A,May,2011