JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1283 TO – 92M TO – 92MOD TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z High Collector-Emitter Voltage z Low Collector-Emitter Saturation Voltage 2. COLLECTOR 3. EMITTER 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1 A PC Collector Power Dissipation 900 mW Thermal Resistance From Junction To Ambient 139 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -10µA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -6 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.2 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.2 μA DC current gain hFE VCE=-4V, IC=-100mA VCE(sat) IC=-500mA,IB=-25mA Collector-emitter saturation voltage Cob Collector output capacitance fT Transition frequency 55 300 -0.3 V 25 pF VCB=-10V,IE=0, f=1MHz VCE=-2V,IC=-10mA 50 MHz CLASSIFICATION OF hFE RANK C D E RANGE 55-110 90-180 150-300 A,Dec,2010