RENESAS HN58C1001T-15

HN58C1001 Series
1M EEPROM (128-kword × 8-bit)
Ready/Busy and RES function
REJ03C0145-0800Z
(Previous ADE-203-028G (Z) Rev.7.0)
Rev. 8.00
Nov. 27. 2003
Description
Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page
programming function to make the write operations faster.
Features
• Single supply: 5.0 V ± 10%
• Access time: 150 ns (max)
• Power dissipation

Active: 20 mW/MHz, (typ)

Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms (max)
• Automatic page write (128 bytes): 10 ms (max)
• Data polling and RDY/Busy
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 10 erase/write cycles (in page mode)
4
• 10 years data retention
• Software data protection
• Write protection by RES pin
• There are also lead free products.
Rev.8.00, Nov. 27.2003, page 1 of 21
HN58C1001 Series
Ordering Information
Type No.
Access time
Package
HN58C1001FP-15
150 ns
525 mil 32-pin plastic SOP (FP-32D)
HN58C1001T-15
150 ns
32-pin plastic TSOP (TFP-32DA)
HN58C1001FP-15E
150 ns
525 mil 32-pin plastic SOP (FP-32DV)
Lead free
HN58C1001T-15E
150 ns
32-pin plastic TSOP (TFP-32DAV)
Lead free
Pin Arrangement
HN58C1001FP Series
RDY/Busy
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
RES A3
WE A2
A1
A13
A0
I/O0
A8
I/O1
A9
I/O2
A11 VSS
OE I/O3
A10 I/O4
I/O5
CE I/O6
I/O7 I/O7
I/O6 CE
A10
I/O5 OE
I/O4
I/O3
(Top view)
Rev.8.00, Nov. 27.2003, page 2 of 21
HN58C1001T Series
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
(Top view)
A4
A5
A6
A7
A12
A14
A16
RDY/Busy
VCC
A15
RES
WE
A13
A8
A9
A11
HN58C1001 Series
Pin Description
Pin name
Function
A0 to A16
Address input
I/O0 to I/O7
Data input/output
OE
Output enable
CE
Chip enable
WE
Write enable
VCC
Power supply
VSS
Ground
RDY/Busy
Ready busy
RES
Reset
Block Diagram
VCC
VSS
I/O0 to I/O7
High voltage generator
RES
OE
I/O buffer
and
input latch
CE
WE
RES
Control logic and timing
A0
to
Y decoder
Y gating
X decoder
Memory array
A6
Address
buffer and
latch
A7
to
A16
Data latch
Rev.8.00, Nov. 27.2003, page 3 of 21
RDY/Busy
HN58C1001 Series
Operation Table
Operation
CE
OE
WE
RES
Read
VIL
VIL
VIH
VH*
RDY/Busy
Busy
I/O
High-Z
Dout
Standby
VIH
×*
×
×
High-Z
High-Z
Write
VIL
VIH
VIL
VH
High-Z to VOL
Din
Deselect
VIL
VIH
VIH
VH
High-Z
High-Z
Write Inhibit
×
×
VIH
×


Data Polling
×
VIL
×
×


VIL
VIL
VIH
VH
VOL
Dout (I/O7)
Program reset
×
×
×
VIL
High-Z
High-Z
2
1
Notes: 1. Refer to the recommended DC operating conditions.
2. × : Don’t care
Absolute Maximum Ratings
Parameter
Symbol
Supply voltage relative to VSS
VCC
−0.6 to +7.0
V
Input voltage relative to VSS
Vin
−0.5* to +7.0
V
Operating temperature range*
Topr
0 to +70
°C
Storage temperature range
Tstg
−55 to +125
°C
2
Value
Unit
1
Notes: 1. Vin min = −3.0 V for pulse width ≤ 50 ns
2. Including electrical characteristics and data retention
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
VIL
−0.3*

0.8
V
VIH
2.2

VCC + 0.3
V
VH
VCC – 0.5

VCC + 1.0
V
Topr
0

+70
°C
Input voltage
Operating temperature
Note:
1. VIL (min): −1.0 V for pulse width ≤ 50 ns
Rev.8.00, Nov. 27.2003, page 4 of 21
1
HN58C1001 Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5.0V ± 10%)
Parameter
Symbol
Min
Typ
Input leakage current
ILI


2*
Output leakage current
ILO


Standby VCC current
ICC1

ICC2

ICC3
Operating VCC current
Max
Unit
Test conditions
µA
VCC = 5.5 V, Vin =5.5 V
2
µA
VCC = 5.5 V, Vout = 5.5/0.4 V

20
µA
CE = VCC

1
mA
CE = VIH


15
mA
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, VCC = 5.5 V


50
mA
Iout = 0 mA, Duty = 100%,
Cycle = 150 ns, VCC = 5.5 V
1
Output low voltage
VOL


0.4
V
IOL = 2.1 mA
Output high voltage
VOH
2.4


V
IOH = –400 µA
Notes: 1. ILI on RES: 100 µA (max)
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Input capacitance*
1
Output capacitance*
Note:
1
Symbol
Min
Typ
Max
Unit
Test conditions
Cin


6
pF
Vin = 0 V
Cout


12
pF
Vout = 0 V
1. This parameter is periodically sampled and not 100% tested.
Rev.8.00, Nov. 27.2003, page 5 of 21
HN58C1001 Series
AC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10%)
Test Conditions
• Input pulse levels:
0.4 V to 2.4 V
0 V to VCC (RES pin)
• Input rise and fall time: ≤ 20 ns
• Output load: 1TTL Gate +100 pF
• Reference levels for measuring timing: 0.8 V, 2.0 V
Read Cycle
HN58C1001-15
Parameter
Symbol
Min
Max
Unit
Test conditions
Address to output delay
tACC

150
ns
CE = OE = VIL, WE = VIH
CE to output delay
tCE

150
ns
OE = VIL, WE = VIH
OE to output delay
tOE
10
75
ns
CE = VIL, WE = VIH
tOH
0

ns
CE = OE = VIL, WE = VIH
tDF
0
50
ns
CE = VIL, WE = VIH
Address to output hold
OE (CE) high to output float*
RES low to output float
RES to output delay
*1
1
tDFR
0
350
ns
CE = OE = VIL, WE = VIH
tRR
0
450
ns
CE = OE = VIL, WE = VIH
Rev.8.00, Nov. 27.2003, page 6 of 21
HN58C1001 Series
Write Cycle
Parameter
Symbol
Min*
Address setup time
tAS
Address hold time
tAH
CE to write setup time (WE controlled)
CE hold time (WE controlled)
2
Typ
Max
Unit
0


ns
150


ns
tCS
0


ns
tCH
0


ns
WE to write setup time (CE controlled)
tWS
0


ns
WE hold time (CE controlled)
tWH
0


ns
OE to write setup time
tOES
0


ns
OE hold time
tOEH
0


ns
Data setup time
tDS
100


ns
Data hold time
tDH
10


ns
WE pulse width (WE controlled)
tWP
250


ns
CE pulse width (CE controlled)
tCW
250


ns
Data latch time
tDL
300


ns
Byte load cycle
tBLC
0.55

30
µs
Byte load window
tBL
100


µs
Write cycle time
tWC
—

10*
Time to device busy
tDB
120


ns


ns
Write start time
tDW
Reset protect time
Reset high time*
5
150*
4
3
Test conditions
ms
tRP
100


µs
tRES
1


µs
Notes: 1. tDF and tDFR are defined as the time at which the outputs achieve the open circuit conditions and are
no longer driven.
2. Use this device in longer cycle than this value.
3. tWC must be longer than this value unless polling techniques or RDY/Busy are used. This device
automatically completes the internal write operation within this value.
4. Next read or write operation can be initiated after tDW if polling techniques or RDY/Busy are used.
5. This parameter is sampled and not 100% tested.
6. A7 to A16 are page addresses and must be same within the page write operation.
7. See AC read characteristics.
Rev.8.00, Nov. 27.2003, page 7 of 21
HN58C1001 Series
Timing Waveforms
Read Timing Waveform
Address
tACC
CE
tOH
tCE
OE
tDF
tOE
WE
High
Data Out
Data out valid
tRR
tDFR
RES
Rev.8.00, Nov. 27.2003, page 8 of 21
HN58C1001 Series
Byte Write Timing Waveform (1) (WE Controlled)
tWC
Address
tCS
tAH
tCH
CE
tAS
tBL
tWP
WE
tOES
tOEH
OE
tDS
tDH
Din
tDW
High-Z
RDY/Busy
tRP
tRES
RES
VCC
Rev.8.00, Nov. 27.2003, page 9 of 21
tDB
High-Z
HN58C1001 Series
Byte Write Timing Waveform (2) (CE Controlled)
Address
tWS
tAH
tBL
tWC
tCW
CE
tAS
tWH
WE
tOES
tOEH
OE
tDS
tDH
Din
tDW
RDY/Busy
tDB
High-Z
tRP
tRES
RES
VCC
Rev.8.00, Nov. 27.2003, page 10 of 21
High-Z
HN58C1001 Series
Page Write Timing Waveform (1) (WE Controlled)
*6
Address
A0 to A16
tAS
tAH
tBL
tWP
WE
tDL
tCS
tBLC
tWC
tCH
CE
tOEH
tOES
OE
tDH
tDS
Din
RDY/Busy
High-Z
tDB
tRP
RES
tRES
VCC
Rev.8.00, Nov. 27.2003, page 11 of 21
tDW
High-Z
HN58C1001 Series
Page Write Timing Waveform (2) (CE Controlled)
*6
Address
A0 to A16
tAS
CE
tAH
tBL
tCW
tDL
tWS
tBLC
tWC
tWH
WE
tOEH
tOES
OE
tDH
tDS
Din
RDY/Busy
High-Z
tDB
tRP
RES
tRES
VCC
Rev.8.00, Nov. 27.2003, page 12 of 21
tDW
High-Z
HN58C1001 Series
Data Polling Timing Waveform
Address
An
An
CE
WE
tOEH
tCE *7
tOES
OE
tDW
tOE*7
I/O7
Din X
Rev.8.00, Nov. 27.2003, page 13 of 21
Dout X
Dout X
tWC
HN58C1001 Series
Toggle bit
This device provide another function to determine the internal programming cycle. If the EEPROM is set to
read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read.
When the internal programming cycle is finished, toggling of I/O6 will stop and the device can be accessible
for next read or program.
Notes: 1. I/O6 beginning state is “1”.
2. I/O6 ending state will vary.
3. See AC read characteristics.
4. Any location can be used, but the address must be fixed.
Toggle bit Waveform
Next mode
*4
Address
tCE *3
CE
WE
*3
tOE
OE
tOEH
tOES
*1
I/O6
Din
Dout
Dout
tWC
Rev.8.00, Nov. 27.2003, page 14 of 21
*2
*2
Dout
Dout
tDW
HN58C1001 Series
Software Data Protection Timing Waveform (1) (in protection mode)
VCC
CE
WE
tBLC
Address
5555
Data
AA
5555
AAAA or
2AAA
55
A0
tWC
Write address
Write data
Software Data Protection Timing Waveform (2) (in non-protection mode)
VCC
tWC
CE
WE
Address
Data
5555
AAAA
or
2AAA
5555
5555
AAAA
or
2AAA
5555
AA
55
80
AA
55
20
Rev.8.00, Nov. 27.2003, page 15 of 21
Normal active
mode
HN58C1001 Series
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle.
Following the initial byte cycle, an additional 1 to 127 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30 µs from the preceding falling edge of WE or CE. When
CE or WE is kept high for 100 µs after data input, the EEPROM enters write mode automatically and the
input data are written into the EEPROM.
Data Polling
Data polling allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O7 to indicate that the EEPROM
is performing a write operation.
RDY/Busy
Busy Signal
RDY/Busy signal also allows status of the EEPROM to be determined. The RDY/Busy signal has high
impedance except in write cycle and is lowered to VOL after the first write signal. At the end of write cycle,
the RDY/Busy signal changes state to high impedance.
RES Signal
When RES is low, the EEPROM cannot be read or programmed. Therefore, data can be protected by keeping
RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide
a latch function.
VCC
Read inhibit
Read inhibit
RES
Program inhibit
Program inhibit
WE,
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising
edge of WE or CE.
Rev.8.00, Nov. 27.2003, page 16 of 21
HN58C1001 Series
Write/Erase Endurance and Data Retention Time
4
3
The endurance is 10 cycles in case of the page programming and 10 cycles in case of the byte programming
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page4
programmed less than 10 cycles.
Data Protection
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 20 ns
or less in program mode.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. Be careful not to allow noise of a width of more than 20 ns on the
control pins.
WE
CE
VIH
0V
VIH
OE
0V
20 ns max
Rev.8.00, Nov. 27.2003, page 17 of 21
HN58C1001 Series
2. Data Protection at VCC On/Off
When VCC is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act
as a trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional
programming, the EEPROM must be kept in an unprogrammable state while the CPU is in an unstable
state.
Note: The EEPROM should be kept in unprogrammable state during VCC on/off by using CPU RESET
signal.
VCC
CPU
RESET
* Unprogrammable
* Unprogrammable
2.1 Protection by RES
The unprogrammable state can be realized by that the CPU’s reset signal inputs directly to the
EEPROM’s RES pin. RES should be kept VSS level during VCC on/off.
The EEPROM brakes off programming operation when RES becomes low, programming operation
doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept
high for 10 ms after the last data input.
VCC
RES
Program inhibit
WE
or CE
1 µs min 100 µs min
Rev.8.00, Nov. 27.2003, page 18 of 21
Program inhibit
10 ms min
HN58C1001 Series
3. Software data protection
To prevent unintentional programming, this device has the software data protection (SDP) mode. The
SDP is enabled by inputting the following 3 bytes code and write data. SDP is not enabled if only the 3
bytes code is input. To program data in the SDP enable mode, 3 bytes code must be input before write
data.
Address
Data
5555
AA
↓
↓
AAAA or 2AAA
55
↓
↓
5555
A0
↓
↓
Write address Write data } Normal data input
The SDP mode is disabled by inputting the following 6 bytes code. Note that, if data is input in the SDP
disable cycle, data can note be written.
Address
Data
5555
↓
AAAA or 2AAA
↓
5555
↓
5555
↓
AAAA or 2AAA
↓
5555
AA
↓
55
↓
80
↓
AA
↓
55
↓
20
The software data protection is not enabled at the shipment.
Note: There are some differences between Renesas Technology’s and other company’s for enable/disable
sequence of software data protection. If there are any questions , please contact with Renesas
Technology’s sales offices.
Rev.8.00, Nov. 27.2003, page 19 of 21
HN58C1001 Series
Package Dimensions
HN58C1001FP Series (FP-32D, FP-32DV)
Unit: mm
20.45
20.95 Max
17
11.30
32
1
1.27
*0.40 ± 0.08
0.38 ± 0.06
0.10
0.15 M
*Dimension including the plating thickness
Base material dimension
Rev.8.00, Nov. 27.2003, page 20 of 21
0.12
0.15 +– 0.10
1.00 Max
*0.22 ± 0.05
0.20 ± 0.04
3.00 Max
16
14.14 ± 0.30
1.42
0˚ – 8 ˚
0.80 ± 0.20
Package Code
JEDEC
JEITA
Mass (reference value)
FP-32D, FP-32DV
Conforms
—
1.3 g
HN58C1001 Series
Package Dimensions (cont.)
HN58C1001T Series (TFP-32DA, TFP-32DAV)
Unit: mm
8.00
8.20 Max
17
1
16
12.40
32
0.50
0.08 M
*Dimension including the plating thickness
Base material dimension
Rev.8.00, Nov. 27.2003, page 21 of 21
*0.17 ± 0.05
0.125 ± 0.04
1.20 Max
0.10
0.80
14.00 ± 0.20
0.45 Max
0.13 ± 0.05
*0.22 ± 0.08
0.20 ± 0.06
0˚ – 5˚
0.50 ± 0.10
Package Code
JEDEC
JEITA
Mass (reference value)
TFP-32DA, TFP-32DAV
Conforms
Conforms
0.26 g
Revision History
Rev.
Date
HN58C1001 Series Data Sheet
Contents of Modification
Page
Description
0.0
Jul. 11. 1991

Initial issue
1.0
Jan. 10. 1992

Recommended DC Operating Conditions
Addition of VH
DC Characteristics
ICC3 max: 40 mA to 50 mA
ICC3 test: Cycle = 200 ns to Cycle = 150 ns
VIH max: VCC + 1 V to VCC + 0.3 V
VH min: VCC − 1.0 V to VCC − 0.5 V
AC Characteristics
Change of Test Conditions
Reference level: 1.8 V to 2.0 V
tDL min: 200 ns to 300 ns
tBLC min: 0.35 µs to 0.55 µs
tWP/tCW min: 150 ns to 250 ns
tCS/tCH to tWS/tWH (CE Controlled)
Functional Description
Deletion of Write Protection (2)
Data Protection 2:
during programming because to during
programming and read because
unprogrammable, standby or readout state to
unprogrammable state
Deletion of protection of mistake
by CE = VCC or OE = Low or
WE = VCC level at VCC on/off
Software data protection
Address: AAAA to AAAA or 2AAA
Change of Timing Waveforms
5
6
16
8
2.0
Jan. 21. 1993

6




Deletion of HN58C1001-12
AC Characteristics
tDH min: 0 ns to 10 ns
Deletion of Mode Description
Addition of Reset function
5
4
Change of erase/write cycles in page mode: 10 to 10
3
Change of erase/write cycles in byte mode: 104 to 10
3.0
Apr. 23. 1993
14
Addition of Toggle Bit
4.0
Nov. 25. 1994
6
Capacitance
Addition of note 1
AC Characteristics
Write cycle: Addition of note 2,3
Addition of tDW min: 150 ns
Page write timing waveform
Addition of note 1
6
11
5.0
May. 23. 1995

Deletion of HN58C1001R series (TFP-32DAR)
Revision Record (cont.)
6.0
Apr. 8. 1997

6
8
16
7.0
Oct. 31. 1997
8
8.00
Nov. 27. 2003

2
Change of format
AC Characteristics
Addition of note.6
Timing Waveforms
Toggle bit
Addition of note.3, 4
Functional Description
Addition of CPU Reset timing waveform
Data protection 3: Addition of note
Timing Waveforms
Read Timing Waveforms: Correct error
Change format issued by Renesas Technology Corp.
Ordering Information
Deletion of HN58C1001P-15
Addition of HN58C1001FP-15E, HN58C1001T-15E
20-21 Package Dimensions
Deletion of DP-32
FP-32D to FP-32D, FP-32DV
TFP-32DA to TFP-32DA, TFP-32DAV
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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