JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA1515 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES z Low Collector-Emitter Saturation Voltage z Low Transition Frequency 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.05mA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-0.05mA,IC=0 -5 V VCB=-20V,IE=0 Collector cut-off current ICBO Emitter cut-off current IEBO VEB=-4V,IC=0 DC current gain hFE VCE=-3V, IC=-0.1A VCE(sat) IC=-0.5A,IB=-0.05A Collector-emitter saturation voltage Cob Collector output capacitance fT Transition frequency 82 -0.5 μA -0.5 μA 390 -0.5 V 30 pF VCB=-10V,IE=0, f=1MHz VCE=-5V,IC=-50mA 50 MHz CLASSIFICATION OF hFE RANK P Q R RANGE 82-180 120-270 180-390 A,Dec,2010