JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB10N60 N-Channel Power MOSFET TO-263-2L Description The CJB10N60 is a high voltage and high current power MOSFET, designed to have characteristics, such as fast switching time, low gate charge, low on-state resistance and have rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURES z Low Crss z Fast switching z 100% avalanche tested 2.Drain 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Value Unit 600 V Gate-Source Voltage VGS ±30 Continuous Drain Current ID 10 A Power Dissipation PD 2 W RθJA 62.5 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient ℃ A,Mar,2012 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Drain-Source Breakdown Voltage Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA 600 VGS(th) VDS =VGS, ID =250µA 2.0 Gate-Body Leakage Current (note1) IGSS VDS =0V, VGS =±30V ±100 nA Zero Gate Voltage Drain Current IDSS VDS =600V, VGS =0V 10 µA VGS =10V, ID =5A 1 Ω V Gate-Threshold Voltage (note1) Drain-Source On-State Resistance (note1) RDS(on) 4.0 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 2.2 Turn-On Delay Time td(on) 46 Rise Time Turn-Off Delay Time Fall Time Forward on Voltage(note1) tr td(off) 1430 VDS =25V,VGS =0V, f =1MHz VDD=325V,ID=10A, RG=25Ω tf VSD 117 pF 74 ns 340 66 VGS =0V, IS=10A 1.4 V Notes: 1. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%. A,Mar,2012