TO-126 Plastic-Encapsulate Transistors 2SC1162

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SC1162
TO-126
TRANSISTOR (NPN)
1. EMITTER
FEATURES
Low Frequency Power Amplifier
2. COLLECOTR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Emitter Voltage
35
V
VCEO
Collector-Emitter Voltage
35
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2.5
A
Pc
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
Min
Max
Typ
Unit
Collector-base breakdown voltage
V(BR)CBO
IC =1mA,IE=0
35
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =10mA,IB=0
35
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA ,IC=0
5
V
Collector cut-off current
ICBO
VCB=35V,IE=0
20
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
20
μA
hFE1
VCE=2V,IC=0.5A
60
hFE2
VCE=2V,IC=1.5A *
20
VCE(sat)
IC=2A,IB=200mA
1
V
VBE
VCE=2V,IC=1.5A
1.5
V
DC current gain
Collector-emitter saturation voltage
Base-collector voltage
fT
Transition frequency
*
VCE=2V,IC=200mA
320
180
MHz
pulse test
CLASSIFICATION OF
Rank
Range
hFE1
B
C
D
60-120
100-200
160-320
B,Feb,2013