JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Thyristors MCR 100- 6,- 8 TO-92 Silicon Planar PNPN Thyristor MAIN FEATURES Symbol value unit IT(RMS) 0.8 A MCR100-6 400 MCR100-8 600 Tj Junction Temperature -40 ~ 125 ℃ Tstg Storage Temperature -55 ~ 150 ℃ VDRM 1.KATHODE 2.GATE V 3.ANODE DESCRIPTION Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. FEATURES z Blocking voltage to 400 V (MCR100-6) z RMS on-state current to 0.8 A z General purpose switching APPLICATIONS z General purpose switching z Phase control applications z Solid state relays ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions On state voltage * VTM Gate trigger voltage VGT Min Max Unit ITM=1A 1.7 V VAK=7V 0.8 V Peak Repetitive forward blocking voltage MCR100-6 VADRM IDRM= 10 μA Peak forward or reverse blocking IDRM VAK= Rated Current IRRM VDRM or VRRM IH IHL=20mA ,VAK =7V Holding current A2 Gate trigger current 400 V 600 MCR100-8 IGT A1 A VAK=7V B 10 µA 5 mA 5 15 µA 15 30 µA 30 80 µA 80 200 µA * Forward current applied for 1 ms maximum duration，duty cycle≤1%。 B,Sep,2011