SOT-353 Plastic-Encapsulate Transistors UMA3N

JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-353 Plastic-Encapsulate Transistors
UMA3N
General purpose transistors (dual transistors)
SOT-353
FEATURES
z Two DTA143T chips in a package
z Mounting cost and area be cut in half
1
Marking: A3
Equivalent circuit
Absolute maximum ratings (Ta=25℃)
Symbol
Limits
Unit
VCBO
Collector-Base Voltage
Parameter
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-100
mA
PC
Collector Dissipation
150
mW
Tj
Junction temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Test
conditions
Min
Typ
Max
Unit
IC=-50μA,IE=0
-50
V(BR)CEO
IC=-1mA,IB=0
-50
V
V(BR)EBO
IE=-50μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
- 0.5
μA
DC current gain
hFE
VCE=-5V,IC=-1mA
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Input resistor
R1
V
100
600
IC=-5mA,IB=-0.25mA
-0.3
VCE=-10V,IC=-5mA, f=100MHz
250
3.29
4.7
V
MHz
6.11
KΩ
A,Dec,2010