JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR (PNP) TO – 126 FEATURES z High Current z Low Voltage 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC Collector Power Dissipation 1.25 W Thermal Resistance From Junction To Ambient 100 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -6 V Collector cut-off current ICBO VCB=-40V,IE=0 -10 μA Collector cut-off current ICEO VCE=-30V,IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -10 μA DC current gain hFE VCE=-2V, IC=-1A VCE(sat) IC=-2A,IB=-0.2A Collector-emitter saturation voltage 400 -0.5 VCE=-5V,IC=-0.1A, f=10MHz fT Transition frequency 60 50 V MHz CLASSIFICATION OF hFE RANK R O Y GR RANGE 60-120 100-200 160-320 200-400 www.cj-elec.com 1 B,Oct,2014 TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ www.cj-elec.com Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 2 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.126 B,Oct,2014