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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Diodes
MBR10150CT
SCHOTTKY BARRIER RECTIFIER
TO-220-3L
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
Value
Unit
150
V
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
105
V
Average rectified output current @Tc=155℃
10
A
120
A
Power dissipation
2
W
Thermal resistance from junction to ambient
50
℃/W
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-55~+150
℃
IO
IFSM
PD
RΘJA
Non-Repetitive peak forward surge current
8.3ms half sine wave
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage
V(BR)
IR=100μA
Reverse current
IR
VR=150V
Forward voltage
Typical total capacitance
Min
Typ
Max
150
Unit
V
100
μA
VF1
IF=5A
1
V
VF2*
IF=10A
1
V
Ctot
VR=5V,f=1MHz
500
pF
*Pulse test
B,Nov,2013
Typical Characteristics
MBR10150CT
Reverse Characteristics
Forward Characteristics
1000
100
Ta=100℃
REVERSE CURRENT IR
FORWARD CURRENT
Ta=100℃
(uA)
1000
IF
(mA)
10000
100
Ta=25℃
10
10
1
Ta=25℃
0.1
0.01
1
1E-3
0
200
400
600
FORWARD VOLTAGE
800
1000
0
30
60
90
REVERSE VOLTAGE
VF (mV)
120
VR
150
(V)
Power Derating Curve
Capacitance Characteristics Per Diode
350
2.5
Ta=25℃
f=1MHz
(W)
300
2.0
PD
POWER DISSIPATION
JUNCTION CAPACITANCE
CJ (pF)
250
200
150
100
1.5
1.0
0.5
50
0
0.0
0
5
10
REVERSE VOLTAGE
15
VR
(V)
20
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Nov,2013