To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING CR12AM Dimensions in mm 3.2±0.2 4.5 1.3 4 7.0 16 MAX 10.5 MAX ∗ TYPE NAME VOLTAGE CLASS φ3.6±0.2 12.5 MIN 3.8 MAX 1.0 0.8 2.5 0.5 2.6 4.5 2.5 ∗ 123 24 3 • IT (AV) ......................................................................... 12A • VDRM ..............................................................400V/600V • IGT ..........................................................................30mA 1 1 2 3 4 Measurement point of case temperature CATHODE ANODE GATE ANODE TO-220 APPLICATION Switching mode power supply, ECR, motor control MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage 400 600 V VD (DC) DC off-state 320 480 V Ratings Unit 18.8 A Commercial frequency, sine half wave, 180° conduction, Tc =91°C 12.0 A Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive 360 A I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 544 A2s PGM Peak gate power dissipation PG (AV) Average gate power dissipation VFGM Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current ITSM for fusing 5 W 0.5 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 10 V IFGM Peak gate forward current 2 Tj Junction temperature Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 2.0 g Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 2.0 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM =40A, — — 1.6 V VGT Gate trigger voltage Tj=25°C, VD=6V, IT=1A — — 1.5 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V IGT Gate trigger current Tj=25°C, VD=6V, IT=1A — — 30 mA IH Holding current Tj=25°C, VD=12V — 15 — mA R th (j-c) Thermal resistance Junction to case ✽1 — — 1.2 °C/W ✽1. The contact thermal resistance R th (c-f) is 1.0°C/W with greased. MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 25°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 400 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 360 320 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PGM = 5W PG(AV) = 0.5W VGT = 1.5V 100 7 5 3 2 IFGM = 2A IGT = 30mA 10–1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 1.6 GATE TRIGGER VOLTAGE (V) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) VFGM = 6V 101 7 5 3 2 1.4 ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, 1.2 DISTRIBUTION 1.0 TYPICAL EXAMPLE 0.8 0.6 0.4 0.2 0 –40 –20 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 3 2 100 (%) GATE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 64 56 θ CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (°C) 360° 180° 120° RESISTIVE, 90° 40 INDUCTIVE 60° LOADS 32 48 θ = 30° 24 16 8 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 θ LOADS 360° 120 100 80 θ = 30° 60 90° 60° 180° 120° 40 20 0 0 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12AM MEDIUM POWER USE AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 θ 360° 120 180° RESISTIVE, 120° INDUCTIVE LOADS NATURAL CONVECTION 100 80 60 θ = 30° 40 60° 90° 20 0 0 AVERAGE POWER DISSIPATION (W) NON-INSULATED TYPE, GLASS PASSIVATION TYPE 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 64 56 360° 100 RESISTIVE LOADS 80 θ = 30° 60 90° 180° 60° 120° 40 20 0 0 4 8 12 16 20 24 28 16 θ 0 θ 360° 8 0 4 8 12 RESISTIVE LOADS 16 20 24 28 32 140 θ 120 360° 80 θ RESISTIVE 120° LOADS NATURAL CONVECTION 60 θ = 30° 40 60° 20 0 32 180° 100 AVERAGE ON-STATE CURRENT (A) 90° 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 64 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 56 θ 140 48 360° CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) θ = 30° 24 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) 120 θ 60° 32 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 θ 90° 40 AVERAGE ON-STATE CURRENT (A) 140 180° 120° 48 RESISTIVE, INDUCTIVE LOADS 40 32 24 θ = 30° 180° 270° 120° DC 90° 60° 16 8 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) θ 360° 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 θ = 30° 90° 180° 40 DC 60° 120° 270° 20 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12AM MEDIUM POWER USE DC 80 270° 60 180° θ = 30° 40 60° 90° 120° 20 0 0 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS θ NATURAL 120 360° CONVECTION 100 200 180 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 80 # 60 40 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 (%) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125°C TYPICAL 140 EXAMPLE 120 IGT (25°C) # 10.1mA 100 20 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) Ta = 25°C VD = 100V RL = 12Ω TYPICAL EXAMPLE IGT (25°C) # 11.2mA TURN-ON TIME (µs) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 # 2.0 1.0 0 0 10 20 30 40 50 60 70 80 90 100 GATE CURRENT (mA) #2 #1 100 (%) JUNCTION TEMPERATURE (°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C) 10.0 TYPICAL EXAMPLE IGT (25°C) # 1 10.6mA # 2 11.6mA 100 –40 –20 0 20 40 60 80 100 120 140 160 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 TURN-ON TIME VS. GATE CURRENT TYPICAL EXAMPLE 160 BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C ) AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, GLASS PASSIVATION TYPE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 200 TYPICAL EXAMPLE 180 160 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR12AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 tw 0.1s 103 7 5 3 2 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999