IS66/67WV1M16EBLL

IS66WV1M16EALL
IS66/67WV1M16EBLL
FEBURARY 2015
16Mb LOW VOLTAGE,
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Features
DESCRIPTION
 High-Speed access time :
- 70ns ( IS66WV1M16EALL )
- 55ns (IS66/67WV1M16EBLL )
 CMOS Lower Power Operation
The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are
high-speed,16M bit static RAMs organized as 1M words by
16 bits. It is fabricated using ISSI’s high performance CMOS
technology.
This highly reliable process coupled with innovative circuit
design techniques, yields high-performance and low power
consumption devices.
When CS1# is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS input
levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs. The active LOW Write Enable (WE#)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB#) and Lower Byte (LB#) access.
 Single Power Supply
 VDD =1.7V~1.95V( IS66WV1M16EALL )
 VDD =2.5V~3.6V (IS66/67WV1M16EBLL )
 Three State Outputs
 Data Control for Upper and Lower bytes
 Lead-free Available
The IS66WV1M16 EALL and IS66/67WV1M16EBLL are
packaged in the JEDEC standard 48-ball mini BGA
(6mm x 8mm). The device is also available for die sales.
FUNCTIONAL BLOCK DIAGRAM
Address
Decode Logic
A0~A19
1M X 16
DRAM
Memory Array
VDD
GND
I/O0-I/O7
Lower Byte
I/O DATA
CIRCUIT
I/O8-I/O15
COLUMN
I/O
Upper Byte
CS2
CS1#
OE#
WE#
UB#
LB#
Control
Logic
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assu
mes no liability arising out of the application oruse of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification
before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected
to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution,
Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. A | 02/23/2015
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1
IS66WV1M16EALL
IS66/67WV1M16EBLL
PIN CONFIGURATIONS
48-Ball miniBGA (6mm x 8mm) Ball Assignment
1
2
3
4
5
6
A
LB#
OE#
A0
A1
A2
CS2
B
I/Q8
UB#
A3
A4
CS1#
I/Q0
C
I/Q9
I/Q10
A5
A6
I/Q1
IQ2
D
GND
IQ11
A17
A7
I/Q3
VDD
E
VDD
IQ12
NC
A16
I/Q4
GND
F
I/Q14
I/Q13
A14
A15
I/Q5
I/Q6
G
I/Q15
A19
A12
A13
WE#
I/Q7
H
A18
A8
A9
A10
A11
NC
Notes :
1. TSOP package option is under evaluation.
PIN DESCRIPTIONS
Symbol
Type
A0~A19
Input
I/Q0~I/Q15
Input /
Output
CS1#, CS2
Input
Chip Enable
OE#
Input
Output Enable
WE#
Input
Write Enable
UB#
Input
Upper Byte select
LB#
Input
Lower Byte select
VDD
Power Supply
Power
GND
Power Supply
Ground
Rev. A | 02/23/2015
Description
Address Inputs
Data Inputs/Outputs
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2
IS66WV1M16EALL
IS66/67WV1M16EBLL
POWER UP INITIALIZATION
IS66WV1M16EALL and IS66/67WV1M16EBLL include an on-chip voltage sensor used to launch the power-up
initialization process. When VDD reaches a stable level at or above the VDD (min) the device will require 50µs
to complete its self-initialization process. During the initialization period, CS1# should remain HIGH. When initializeation is complete, the device is ready for normal operation.
50 us
VDD( min)
Device Initialization
VDD
Device for Normal Operation
0V
TRUTH TABLE
Mode
WE#
CS1#
CS2
OE#
LB#
UB#
I/O0 –
I/O7
I/O8 –
I/O15
VDD Current
Not
Selected
X
X
H
X
X
L
X
X
X
X
H
X
High-Z
High-Z
High-Z
High-Z
ISB1,ISB2
Output
Disabled
H
H
L
L
H
H
H
H
L
X
X
L
High-Z
High-Z
High-Z
High-Z
ICC
ICC
L
L
L
H
H
H
L
L
L
L
H
L
H
L
L
DOUT
High-Z
High-Z
Read
H
H
H
DOUT
D
DOUT
ICC
ICC
ICC
Write
L
L
L
L
L
L
H
H
H
X
X
X
L
H
L
H
L
L
Din
High-Z
Din
High-Z
Din
Din
ICC
ICC
ICC
ISB1,ISB2
OUT
OPERATING RANGE (VDD)
Range
Ambient Temperature
IS66WV1M16EALL
(70ns)
IS66WV1M16EBLL
(55ns, 70ns)
IS66WV1M16EBLL
(55ns, 70ns)
Industrial
–40°C to +85°C
1.7V – 1.95V
2.5V – 3.6V
–
Automotive , A1
–40°C to +85°C
–
–
2.5V – 3.6V
Automotive , A2
–40°C to +105°C
–
–
2.5V – 3.6V
Rev. A | 02/23/2015
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3
IS66WV1M16EALL
IS66/67WV1M16EBLL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
-0.2 to VDD + 0.3
V
-40 to +85
°C
VTERM
Terminal Voltage with Respect to GND
TBIAS
Temperature Under BIAS
VDD
VDD Related to GND
-0.2 to +3.8
V
TSTG
Storage Temperature
-65 to +150
°C
PT
Power Dissipation
1.0
W
Notes:
Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only,
and functional operation of the device at these or any other conditions above those indicated in this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.5V-3.6V (IS66/67WV1M16EBLL)
Symbol
Parameter
Test
Conditions
VDD
Min.
Max.
Unit
VOH
VOL
VIH
VIL
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage(1)
Input LOW Voltage(1)
IoH = -1 mA
IoL = 2.1 mA
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.2
—
2.2
–0.2
—
0.4
VDD + 0.3
0.6
V
V
V
V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
–1
1
μA
ILo
Output Leakage
GND ≤ VOUT ≤ VDD,
Outputs Disabled
–1
1
μA
Notes:
1. VILL (min.) = –2.0V AC (pulse width < 10ns). Not 100% tested.
VIHH (max.) = VDD + 2.0V AC (pulse width < 10ns). Not 100% test
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.7V-1.95V(IS66WV1M16EALL)
Symbol Parameter
Test
Conditions
VDD
Min.
Max
.
Unit
VOH
Output HIGH Voltage
IOH = -0.1 mA
1.7-1.95V
1.4
—
V
VOL
VIH
Output LOw Voltage
Input HIGH Voltage(1)
IOL = 0.1 mA
1.7-1.95V
1.7-1.95V
—
1.4
0.2
VDD + 0.2
V
V
VIL
Input LOw Voltage(1)
1.7-1.95V
–0.2
0.4
V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
–1
1
μA
ILo
Output Leakage
GND ≤ VOUT ≤ VDD,
Outputs Disabled
–1
1
μA
Notes:
1. VILL (min.) = –1.0V AC (pulse width < 10ns). Not 100% tested.
VIHH (max.) = VDD + 1.0V AC (pulse width < 10ns). Not 100% test
Rev. A | 02/23/2015
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4
IS66WV1M16EALL
IS66/67WV1M16EBLL
CAPACITANCE
Symbol
Description
Conditions
MIN
MAX
Unit
CIN
Input Capacitance
VIN = 0V
-
8
pF
CIO
Input/Output Capacitance (DQ)
Vout = 0V
-
10
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
1.7V – 1.95V
( Unit )
2.5V – 3.6V
( Unit )
Input Pulse Level
0.4V to VDD – 0.2V
0.4V to VDD – 0.3V
Input Rise and Fall
Time
5ns
5ns
Input and Output
Timing and
Reference Level
VREF
VREF
Output Load
See Figures 1 and 2
See Figures 1 and 2
Symbol
1.7V – 1.95V
2.5V – 3.6V
R1(& )
3070
1029
R2(& )
3150
1728
VREF
0.9V
1.4V
VTM
1.8V
2.8V
AC TEST LOADS
R1
R1
VTM
VTM
OUTPUT
OUTPUT
30 pF
Including
Jig and
scope
Figure 1
Rev. A | 02/23/2015
R2
5 pF
Including
Jig and
scope
R2
Figure 2
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5
IS66WV1M16EALL
IS66/67WV1M16EBLL
1.7V-1.95V POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Symbol
ICC
ICC1
Parameter
Conditions
Device
TYP.
MAX.
70ns
Unit
VDD Dynamic
Operating
Supply Current
VDD=Max.,IOUT=0mA,
f=fMAX , All inputs = 0.4V
or VDD – 0.2V
Com.
Ind.
Auto
-
20
25
30
mA
Operating
Supply Current
VDD=Max.,CS1#=0.2V,
WE#= VDD – 0.2V,
f=1MHz
Com.
Ind.
Auto
-
8
8
10
mA
VDD=Max.,VIN=VIH or VIL,
CS1# = VIH, CS2=VIL ,
Com.
Ind.
Auto
-
0.6
0.6
1
mA
Com.
Ind.
Auto
-
100
120
150
uA
ISB1
TTL Standby Current
( TTL Inputs )
ISB2
CMOS Standby Current
( CMOS Inputs )
f=1MHz
VDD=Max.,
CS1# > VDD – 0.2V,
CS2 < 0.2V, VIN > VDD – 0.2V
or VIN < 0.2V, f=0
Notes:
1. At f = f MAX , address and data inputs are cycling at the maximum frequency , f = 0 means no input lines change.
2.5V-3.6V POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Symbol
ICC
ICC1
ISB1
ISB2
Parameter
Conditions
Device
TYP
MAX
55ns
Unit
VDD Dynamic
Operating
Supply Current
VDD=Max.,IOUT=0mA,
f=fMAX , All inputs = 0.4V
or VDD – 0.3V
Com.
Ind.
Auto
Typ.(2)
-
25
28
35
15
mA
Operating
Supply Current
VDD=Max.,CS1#=0.2V,
WE#= VDD – 0.2V,
f=1MHz
Com.
Ind.
Auto
-
8
8
10
mA
VDD=Max.,VIN=VIH or VIL,
CS1# = VIH, CS2=VIL ,
f=1MHz
Com.
Ind.
Auto
-
0.6
0.6
1
mA
VDD=Max.,
CS1# > VDD – 0.2V,
CS2 < 0.2V, VIN > VDD – 0.2V
or VIN < 0.2V ,f=0
Com.
Ind.
Auto
Typ.(2)
-
100
130
150
75
uA
TTL Standby Current
( TTL Inputs )
CMOS Standby Current
( CMOS Inputs )
Notes:
1. At f = fMAX , address and data inputs are cycling at the maximum frequency , f = 0 means no input lines change.
2.
Typical values are measured at VDD = 3.0V, Ta = 25 ºC , and not 100% tested.
Rev. A | 02/23/2015
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6
IS66WV1M16EALL
IS66/67WV1M16EBLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
-55
Parameter
-70
Unit
Notes
Min
Max
Min
Max
55
-
70
-
ns
-
55
-
70
ns
10
-
10
-
ns
CS1#/CS2 Acess Time
-
55
-
70
ns
tDOE
OE# Access Time
-
25
-
35
ns
1
tHZOE
OE# to High-Z output
-
20
-
25
ns
2
tLZOE
OE# to Low-Z output
5
-
5
-
ns
2
tCSM
Maximum CS1#/CS2 pulse width
-
15
-
15
us
tHZCS1/HZCS2
CS1#/CS2 to High-Z output
0
20
0
25
ns
2
tLZCS1/HZCS2
CS1#/CS2 to Low-Z output
10
-
10
-
ns
2
tRC
Read cycle time
tAA
Address Acess Time
tOHA
Output Hold Time
tACS1/ACS2
1
tBA
UB#/LB# Acess Time
-
55
-
70
ns
1
tHZB
UB#/LB# to High-Z output
0
20
0
25
ns
2
tLZB
UB#/LB# to Low-Z output
0
-
0
-
ns
2
tCPH
CS1# HIGH (CS2 LOW) time
5
-
5
-
ns
Notes:
1. Test conditions and output loading are specified in the AC Test Conditions and AC Test Loads (Figure 1) on page 5.
2. Tested with the load in Figure 2. Transition is measured ±100 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
READ CYCLE NO. 1(1) (Address Controlled, OE#= VIL, WE#=VIH, UB# or LB# = VIL)
tRC
Address
tCSM
CS1#
CS2
tAA
tOHA
DQ 0-15
PREVIOUS DATA VALID
tOHA
DATA VALID
Notes:
1. WE# is HIGH for a Read Cycle.
Rev. A | 02/23/2015
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IS66WV1M16EALL
IS66/67WV1M16EBLL
READ CYCLE NO. 2(1) (CS1#, CS2, OE# and UB#/LB# Controlled)
tRC
ADDRESS
tAA
tOHA
tDOE
OE#
tHZOE
tCSM
CS1#
tLZOE
tACE1/tACE2
CS2
tLZCS1/
tLZCS2
tHZCS1/
tHZCS2
tCSM
UB#,LB#
tBA
tHZB
tLZB
DOUT
HIGH-Z
DATA VALID
Notes:
1. Address is valid prior to or coincident with CS1# LOW (CS2 HIGH) transition, and is valid after or coincident with CS1# HI
GH (CS2 LOW) transition.
Rev. A | 02/23/2015
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IS66WV1M16EALL
IS66/67WV1M16EBLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
tWC
tSCS1/SCS2
-55
Parameter
-70
Unit
Min
Max
Min
Max
Write Cycle Time
55
-
70
-
ns
CS1#/CS2 to Write End
45
-
60
-
ns
-
15
-
15
us
tCSM
Maximum CS1#/CS2 pulse width
tAW
Address Setup to Write Time
45
-
60
-
ns
tHA
Address Hold to End of Write
0
-
0
-
ns
tSA
Address Setup Time
0
-
0
-
ns
tPWB
UB#/LB# Valid to End of Write
45
-
60
-
ns
tPWE
WE# Pulse Width
45
-
60
-
ns
tSD
Data Setup Time
25
-
30
-
ns
Notes
tHZWE
WE# LOW to High-Z output
-
20
-
30
ns
3
tLZWE
WE# HIGH to Low-Z output
5
-
5
-
ns
3
tCPH
CS1# HIGH (CS2 LOW) time
5
-
5
-
ns
Notes:
1. Test conditions and output loading are specified in the AC Test Conditions and AC Test Loads (Figure 1) on page 5.
2. The internal write time is defined by the overlap of CS1#, UB#, LB# and WE# LOW, CS2 HIGH . All signals must be
in valid states to initiate a Write, but anyone can go inactive to terminate Write. The Data Input Setup and Hold timing are
referenced to the rising or falling edge of the signals that terminates the Write.
3. Tested with the load in Figure 2. Transition is measured ±100 mV from steady-state voltage. Not 100% tested.
4. tPWE > tHzWE + tSD when OE# is LOW.
5. Chip Select Active Time (both CS1# LOW and CS2 HIGH) must not be longer than tCMS of 15 us.
Rev. A | 02/23/2015
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9
IS66WV1M16EALL
IS66/67WV1M16EBLL
AC WAVEFORMS
WRITE CYCLE NO. 1(1) (CS1# Controlled, OE#= HIGH or LOW)
tWC
ADDRESS
tHA
CS1#
tCSM
CS2
tAW
tPWE
WE#
tPWB
UB#,LB#
tSA
DOUT
tHZWE
DATA UNDEFINED
tLZWE
HIGH-Z
tSD
tHD
DATA- IN VALID
DIN
Notes:
1. Write address is valid prior to or coincident with CS1# LOW (CS2 HIGH) transition, and is valid after or coincident with C
S1# HIGH (CS2 LOW) transition.
WRITE CYCLE NO. 2 (WE# Controlled, OE#= HIGH during Write Cycle)
tWC
ADDRESS
OE#
tSCS1
tHA
CS1#
tSCS2
CS2
tAW
tPWE
WE#
UB#,LB#
tHZWE
tSA
DOUT
tLZWE
HIGH-Z
DATA UNDEFINED
tSD
DIN
Rev. A | 02/23/2015
tHD
DATA -IN VALID
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IS66WV1M16EALL
IS66/67WV1M16EBLL
WRITE CYCLE NO. 3 (WE# Controlled, OE#= LOW during Write Cycle)
tWC
ADDRESS
LOW
OE#
tHA
tSCS1
CS1#
tSCS2
CS2
tAW
tPWE
WE#
tPWB
UB#,LB#
tSA
DOUT
tHZWE
tLZWE
HIGH-Z
DATA UNDEFINED
tSD
tHD
DATA-IN VALID
DIN
WRITE CYCLE NO. 4 (UB# / LB# Controlled, CS2 is HIGH during Write Cycle)
tWC
ADDRESS
tWC
ADDRESS 1
ADDRESS 2
tCSM
CS1#
tSA
tHA
tHA
tSA
WE#
UB#,LB#
tPWB
tPWB
WORD 1
WORD 2
tLZWE
tHZWE
DOUT
HIGH-Z
DATA UNDEFINED
tSD
DIN
Rev. A | 02/23/2015
tHD
DATA IN
VALID
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DATA IN
VALID
11
IS66WV1M16EALL
IS66/67WV1M16EBLL
AVOIDABLE TIMING and RECOMMENDATIONS
Figure 3a : tCSM Violation
15us
CS1#
WE#
Address
Figure 3b : Recommendation
15us
CS1#
15 us
5ns
WE#
Address
Rev. A | 02/23/2015
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IS66WV1M16EALL
IS66/67WV1M16EBLL
AVOIDABLE TIMING and RECOMMENDATIONS
Figure 4a : tCSM Violation
CS1#,WE#
UB# &LB#
15us
Address
Figure 4b : Recommendation
15us
WE# ,
UB# , LB#
15us
CS1#
Address
Notes:
1. PSRAM uses DRAM cell which needs a REFRESH action periodically to retain the information. This REFRESH
action is performed only when the device is not selected (Chip Select Pins are Disabled). A hidden REFRESH action
has to be executed by the device at least once every 15 µs of tCSM.
2. Figure 3a shows a timing example in which consecutive READ cycles for more than 15 us . This timing should be
avoided for proper REFRESH operation.
REFRESH operation can begin only during Chip Select pins are Disabled (CS1# is High and CS2 is Low ) for more than 5ns.
Example on how to avoid tCSM violation in Figure 3a is shown in Figure 3b.
3. Figure 4a shows a timing example in which a single WRITE operation is maintained for a period greater than 15 µs.
Since a proper REFRESH action cannot be performed during device is selected by Chip Select pins, information
stored in the device will not be retained if this timing occurs.
Figure 4b is a timing example of using CS1# signal toggling for proper the WRITE operation
Rev. A | 02/23/2015
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IS66WV1M16EALL
IS66/67WV1M16EBLL
IS66WV1M16EALL
Industrial Temperature Range: (-40oC to +85oC)
Voltage Range : 1.7V to 1.95V
Config.
Speed (
ns)
1Mx16
70
Order Part No.
Package
IS66WV1M16EALL-70BLI
mini BGA(6mm x 8mm), Lead-free
IS66WV1M16EBLL
Industrial Temperature Range: (-40oC to +85oC)
Voltage Range : 2.5V to 3.6V
Config.
Speed (ns)
Order Part No.
Package
1Mx16
55
IS66WV1M16EBLL-55BLI
mini BGA(6mm x 8mm), Lead-free
70
IS66WV1M16EBLL-70BLI
mini BGA(6mm x 8mm), Lead-free
IS67WV1M16EBLL
Automotive (A1) Temperature Range: (-40oC to +85oC)
Voltage Range : 2.5V to 3.6V
Config.
Speed (ns)
Order Part No.
Package
1Mx16
55
IS67WV1M16EBLL-55BLA1
mini BGA(6mm x 8mm), Lead-free
70
IS67WV1M16EBLL-70BLA1
mini BGA(6mm x 8mm), Lead-free
Notes :
1. Please contact ISSI SRAM marketing at [email protected] if you need -40 oC to +105 oC product.
Rev. A | 02/23/2015
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14
IS66WV1M16EALL
IS66/67WV1M16EBLL
Rev. A | 02/23/2015
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15