RENESAS 2SD2106

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Customer Support Dept.
April 1, 2003
Cautions
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2SD2106
Silicon NPN Epitaxial
ADE-208-922 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier
Outline
TO-220FM
2
1
12
3
1. Base
2. Collector
3. Emitter
ID
3 kΩ
(Typ)
200 Ω
(Typ)
3
2SD2106
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
120
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
6
A
Collector peak current
I C(peak)
10
A
Collector power dissipation
PC
2
W
PC *
1
25
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
120
—
—
V
I C = 0.1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
120
—
—
V
I C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
I E = 50 mA, IC = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 100 V, IE = 0
I CEO
—
—
10
VCE = 100 V, RBE = ∞
DC current transfer ratio
hFE
1000
—
20000
VCE = 3 V, IC = 3 A*1
Collector to emitter saturation
VCE(sat)1
—
—
1.5
voltage
VCE(sat)2
—
—
3.0
Base to emitter saturation
VBE(sat)1
—
—
2.0
voltage
VBE(sat)2
—
—
3.5
Note:
2
1. Pulse test.
V
I C = 3 A, IB = 6 mA*1
I C = 6 A, IB = 60 mA*1
V
I C = 3 A, IB = 6 mA*1
I C = 6 A, IB = 60 mA*1
2SD2106
Maximum Collector Dissipation Curve
Area of Safe Operation
30
W
4.5
4.0
3.5
3.0
2.5
2.0
1.0 mA
2
IB = 0
1
2
3
4
5
Collector to emitter voltage VCE (V)
DC current transfer ratio hFE
25
Collector current IC (A)
ms
=
5.0
1.5
0
s
Collector current IC (A)
s
10,000
TC = 25°C
6
4
)
°C
25
DC Current Transfer Ratio
vs. Collector Current
PC
8
=
1.0
3
10
30
100 300
Collector to emitter voltage VCE (V)
Typical Output Characteristics
10
10
0.03
0.3
150
TC
0.3 Ta = 25°C
1 shot pulse
0.1
s
0µ
1.0
1m
=
50
100
Case Temperature TC (°C)
PW
0
IC (max)
(
on
ati
er
Op
10
3
10
20
1µ
iC (peak)
10
DC
Collector power dissipation Pc (W)
30
5,000
VCE = 3 V
Pulse
TC
2,000
=
75
°C
°C
25
°C
–25
1,000
500
200
100
0.1
0.2
0.5 1.0
2
5
Collector current IC (A)
10
3
Collector to emitter saturation voltage VCE (sat) (V)
Base to emitter saturation voltage VBE (sat) (V)
2SD2106
Saturation Voltage vs. Collector Current
10
5
200
VBE (sat)
2
500
1
VCE (sat)
0.5
TC = 25°C
Pulse
0.2
0.1
lC/lB = 200
0.2
0.5 1.0
2
5
Collector current IC (A)
10
Thermal resistance θj-c (°C/W)
Transient Thermal Resistance
10
3
TC = 25°C
1.0
0.3
0.1
1m
10m
100m
1.0
Time t (s)
4
10
100
1000
2SD2106
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
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Electronic Components Group
Continental Europe
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D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
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Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
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Berkshire SL6 8YA
United Kingdom
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Fax: 0628-778322
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Hong Kong
Tel: 27359218
Fax: 27306071
5