2SD1421 Silicon NPN Epitaxial REJ03G0789-0200 (Previous ADE-208-1152) Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)*1 PC*2 Tj Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Rev.2.00 Aug 10, 2005 page 1 of 5 Ratings 180 160 5 1.5 3 1 150 –55 to +150 Unit V V V A A W °C °C 2SD1421 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol Min V(BR)CBO 180 V(BR)CEO 160 V(BR)EBO 5 ICBO — hFE1*1 60 hFE2 30 Collector to emitter saturation voltage VCE(sat) — Base to emitter voltage VBE — Note: 1. The 2SD1421 is grouped by hFE1 as follows. Mark ED EE hFE1 60 to 120 100 to 200 Rev.2.00 Aug 10, 2005 page 2 of 5 Typ — — — — — — — — Max — — — 10 200 — 1.0 0.9 Unit V V V µA V V Test conditions IC = 1 mA, IE = 0 IC = 10 mA, RBE = ∞ IE = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 0.15 A VCE = 5 V, IC = 0.5 A IC = 0.5 A, IB = 50 mA, Pulse VCE = 5 V, IC = 0.15 A, Pulse 2SD1421 Main Characteristics Typical Output Characteristics 1.0 1.2 Collector Current IC (A) Collector Power Dissipation Pc (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 0.8 0.4 50 100 150 2.0 0.6 1.5 0.4 1.0 0.2 0.5 mA 0 10 20 30 40 50 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 300 DC Current Transfer Ratio hFE 500 VCE = 5 V Pulse 200 100 20 10 25 –25 °C 50 Ta = 75 Collector Current IC (mA) 0.8 IB = 0 0 5 2 VCE = 5 V Pulse 250 200 150 100 50 0 1 0 0.2 0.4 0.6 0.8 1 1.0 3 10 30 100 300 1,000 3,000 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current 1.2 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE (sat) (V) Pulse 0 5. 0 4. 3.5 0 3. 2.5 IC = 10 IB Pulse 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1,000 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 240 VCE = 5 V 200 160 120 80 40 0 10 30 100 300 Collector Current IC (mA) 1,000 2SD1421 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SD1421 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SD1421EDTR-E 2SD1421EETR-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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