Datasheet (620 KB, EN)

PXAC182002FC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier
applications in the 1805 to 1880 MHz frequency band. Features
include dual-path design, input and output matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PXAC182002FC
Package H-37248-4
Features
Single-carrier WCDMA Drive-up
• Broadband internal input and output matching
24
• Asymmetrical Doherty design
- Main: 70 W Typ (P1dB)
- Peak: 110 W Typ (P1dB)
60
Efficiency
20
40
16
20
Gain
12
0
8
-20
PAR @ 0.01% CCDF
4
0
Efficiency (%)
Peak/Average Ratio, Gain (dB)
VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
30
35
40
45
50
c182002fc_g1
55
• Capable of handling 10:1 VSWR @28 V, 110 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
-40
25
• Typical pulsed CW performance, 1880 MHz, 28 V,
combined outputs
- Output power at P3dB = 194 W
- Efficiency = 64%
- Gain = 14 dB
-60
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 400 mA, VGSPEAK = 1.1 V, POUT = 28.2 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84
MHz, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
15.5
16.5
—
dB
Drain Efficiency hD
48.5
51
—
%
Adjancent Channel Power Ratio
ACPR
—
–30
–26
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
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Rev. 02.2, 2015-06-05
PXAC182002FC
DC Characteristics (each side)
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
0.1
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
1.0
µA
On-State Resistance (main)
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.18
—
W
(peak)
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.135
—
W
VDS = 28 V, IDQ = 400 mA
VGS
2.55
2.65
2.75
V
VDS = 28 V, IDQ = 0 A
VGS
0.9
1.2
1.3
V
VGS = 10 V, VDS = 0 V
IGSS
—
—
0.1
µA
Operating Gate Voltage (main)
(peak)
Gate Leakage Current
Maximum Ratings
Parameter
Symbol
Value
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Operating Voltage VDD
0 to +32
Junction Temperature
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Thermal Resistance (main, TCASE = 70°C, 28 W CW)
RqJC
1.088
°C/W
RqJC
0.587
°C/W
(peak, TCASE = 70°C, 100 W CW)
Unit
V
Ordering Information
Type and Version
Order Code
Package Description Shipping
PXAC182002FC V1
PXAC182002FCV1XWSA1
H-37248-4, earless flange Tray
PXAC182002FC V1 R250
PXAC182002FCV1R250XTMA1
H-37248-4, earless flange
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 02.2, 2015-06-05
PXAC182002FC
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 400 mA, ƒ = 1805-1880 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
60
-20
-20
50
-25
ACP Up
40
30
-40
-50
20
ACP Low
Efficiency
-60
-70
27
32
37
10
42
47
c182002fc_g2
52
1880 ACPL
1880 ACPU
1842.5 ACPL
1842.5 ACPU
1805 ACPL
1805 ACPU
-30
-35
-40
-45
0
-50
27
Average Output Power (dBm)
Gain
35
8
25
4
15
33
37
41
45
49
52
c182002fc_g4
53
57
65
Efficiency
50
Gain
15
5
5
35
24V Gain
28V Gain
32V Gain
24V Eff
28V Eff
32V Eff
10
27
35
43
51
20
c182002fc_g5
59
5
Output Power (dBm)
Output Power (dBm)
Data Sheet
c182002fc_g3
20
Gain (dB)
45
Efficiency (%)
Gain (dB)
55
Efficiency
29
25
65
16
0
47
IDQ = 400 mA, ƒ = 1880 MHz
1842.5 Gain
1805 Gain
1880 Gain
1880 Eff
1842.5 Eff
1805 Eff
12
42
CW Performance
at various VDD
VDD = 28 V, IDQ = 400mA
20
37
Average Output Power (dBm)
CW Performance
24
32
Efficiency (%)
-30
ACP Up & Low (dBc)
-10
Efficiency(%)
ACP Up & Low (dBc)
VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
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Rev. 02.2, 2015-06-05
PXAC182002FC
Typical Performance (cont.)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 28 V, IDQ = 400 mA
18
-10
16
-15
14
-20
IRL
12
10
1700
1750
1800
1850
1900
-25
Input Return Loss (dB)
Gain (dB)
Gain
-30
2000
c182002fc_g6
1950
Frequency (MHz)
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, IDQ = 405 mA
P1dB
Max Output Power
Max Drain Efficiency
hD
[%]
Zl
[ W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
86
54.0
6.49 – j2.19
21.9
47.2
52
66.6
49.3
85
57.6
5.82 – j2.44
21.7
47.5
56
66.3
49.5
89
55.2
4.53 – j2.29
21.5
47.7
59
67.9
Freq
[MHz]
Zs
[W]
Zl
[ W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
1810
3.94 – j10.15
2.92 – j5.27
19.2
49.4
1840
5.13 – j10.93
2.93 – j4.16
19.5
1880
5.90 – j12.44
2.73 – j5.17
19.2
Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, IDQ = 685 mA
P1dB
Max Output Power
Max Drain Efficiency
hD
[%]
Zl
[ W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
hD
[%]
123
55.5
3.52 – j2.84
22.7
49.7
94
66.2
50.7
117
54.5
3.39 – j3.01
23.2
49.2
84
64.1
50.7
116
54.3
2.83 – j3.50
23.1
49.2
83
64.3
Freq
[MHz]
Zs
[W]
Zl
[ W]
Gain
[dB]
POUT
[dBm]
POUT
[W]
1810
3.71 – j9.13
4.64 – j5.44
20.5
50.9
1840
4.76 – j8.65
4.66 – j5.68
20.6
1880
6.40 – j9.13
4.63 – j5.74
20.8
Data Sheet
4 of 8
Rev. 02.2, 2015-06-05
PXAC182002FC
Reference Circuit , 1805 – 1880 MHz
RO4350, .020
(60)
RO4350, .020
(61)
VGS
VDD
C217
C106
C209 C213
C211
R106
C108
C102
R104
C212 C210
C218
R101
R102
C105
R103
C203
S1
C201
RF_IN
RF_OUT
C219
C104
C208
C215
C101
C207
R105
C206 C216
C204 C202
VDD
C107
C103
C214
VGSPK
C205
PXAC182002FC_OUT_01
PXAC182002FC_IN_01
c 1 8 2 0 0 2 f c _ C D _ 0 3 - 2 4 - 2 0 1 5
Reference circuit assembly diagram (not to scale)
Data Sheet
5 of 8
Rev. 02.2, 2015-06-05
PXAC182002FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PXAC182002FC V1
Test Fixture Part No.
LTA/PXAC182002FC V1
PCB
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Information
Component
Description
Manufacturer
P/N
C101
Capacitor, 1.2 pF
ATC
ATC600F1R2CW250T
C102
Capacitor, 0.5 pF
ATC
ATC600F0R5CW250T
C103, C104, C105, C106
Capacitor, 18 pF
ATC
ATC600F180JW250T
C107, C108
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
R101
Resistor, 50 Ω
Richardson
C8A50Z4A
R102
Resistor, 18 ohms
Panasonic Electronic Components
ERJ-8GEYJ180V
R103, R104
Resistor, 301 Ω
Venkel
CR0603-16W-3010FT
R105, R106
Resistor, 10 Ω
Panasonic Electronic Components
ERJ-3GEYJ100V
S1
Hybrid Coupler
Anaren
X3C19P1-03S
C201, C207, C215,
C218, C219
Capacitor, 18 pF
ATC
ATC600F180JW250T
C202
Capacitor, 0.8 pF
ATC
ATC600F0R8AW250T
C203
Capacitor, 5.1 pF
ATC
ATC600F5R1AW250T
C204
Capacitor, 1.6 pF
ATC
ATC600F1R6AW250T
C205, C217
Capacitor, 220 µF
Cornell Dubilier Electronics
SK221M050ST
C206, C208, C209,
C211, C213, C214, C216
Capacitor, 10 µF
Taiyo Yuden
UMK325C7106MM-T
C210
Capacitor, 0.5 pF
ATC
ATC600F0R5AW250T
C212
Capacitor, 1.6 pF
ATC
ATC600F1R6AW250T
Input
Output
Pinout Diagram (top view)
Main
Peak
D1
D2
G1
G2
S
Pin Description
D1 Drain device 1 (Main)
D2 Drain device 2 (Peak)
G1 Gate device 1 (Main)
G2 Gate device 2 (Peak)
S Source (flange)
H-37248-4_pd_10-10-2012
Lead connections for PXAC182002FC
Data Sheet
6 of 8
Rev. 02.2, 2015-06-05
PXAC182002FC
Package Outline Specifications
Package H-37248-4
(8.89
[.350])
(5.08
[.200])
2X 45° X 2.72
[45° X .107]
+0.13
-0.38
+0.005
[ R.030 -0.015 ]
4X R0.76
2X 4.83±0.51
[.190±0.020]
FLANGE 9.78
[.385]
CL
D1
D2
LID 9.40
[.370]
19.43±0.51
[.765±0.020]
CL
G1
G2
4X 3.81
[.150]
2X 12.70
[.500]
SPH 1.57
[.062]
19.81±0.20
[.780±0.008]
1.02
[.040]
0.0381 [.0015] -A-
H-37248-4_po_02_01-09-2013
3.76±0.25
[.148±0.010]
S
CL
20.57
[.810]
DiagramNotes—unlessotherwisespecified:
1. InterpretdimensionsandtolerancesperASMEY14.5M-1994.
2. Primarydimensionsaremm.Alternatedimensionsareinches.
3. Alltolerances±0.127[.005]unlessspecifiedotherwise.
4. Pins:D1,D2–drains;G1,G2–gates;S–source.
5. Leadthickness:0.10+0.076/–0.025mm[0.004+0.003/–0.001inch].
6. Goldplatingthickness:1.14±0.38micron[45±15microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
7 of 8
Rev. 02.2, 2015-06-05
PXAC182002FC V1
Revision History
Revision
Date
Data Sheet Type
Page
Subjects (major changes since last revision)
01
2014-09-23
Advance
All
Data Sheet reflects advance specification for product development
02
2015-03-24
Production
All
All
Data Sheet reflects released product specification
Revised all data and includes updated final specs, typical performance graphs, loadpull, reference circuit, package outline
02.1
2015-05-20
Production
1
Updated single-carrier WCDMA test spec
02.2
2015-06-05
Production
1
Corrected I/O in description paragraph, removed f1 from single-carrier WCDMA test spec condition
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
(highpowerRF@infineon.com)
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2015-06-05
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
8 of 8
Rev. 02.2, 2015-06-05