B GB 719 N 7E SD Min iatu re ES D rob u s t Lo w No is e A mplifi er f or e m bed ded F M R adio Ant ennas in H ands e ts Applic atio n N ote A N 255 Revision: 1.1 2012-01-18 RF and P r otecti on D evic es Edition 2012-01-18 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGB719N7ESD Application Note AN255 Revision History: 2012-01-18 Previous Revision: 1.0 Page Subjects (major changes since last revision) Package change TSLP 7-8 >> TSNP 7-6 Trademarks of Infineon Technologies AG A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, E-GOLD™, EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWORX™, M-GOLD™, MIPAQ™, ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUADFALC™, RASIC™, ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, SensoNor™, SEROCCO™, SICOFI™, SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™, thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™. Other Trademarks AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2009-10-19 Application Note AN255, 1.1 3 / 13 2012-01-18 BGB719N7ESD List of Content, Figures and Tables Table of Content 1 1.1 Introduction ........................................................................................................................................ 5 Applications .......................................................................................................................................... 5 2 Performance Overview ...................................................................................................................... 6 3 Application Information ..................................................................................................................... 7 4 Measured Graphs ............................................................................................................................... 8 5 Layout ................................................................................................................................................ 11 Authors .............................................................................................................................................. 12 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 BGB719N7ESD in TSNP-7-6 Package ................................................................................................ 5 FM Radio application schematic .......................................................................................................... 6 Schematics of the BGB719N7ESD application circuit ......................................................................... 7 Insertion Power Gain InBand ............................................................................................................... 8 Input Matching ...................................................................................................................................... 9 Output Matching ................................................................................................................................... 9 Z Parameters Input output matching .................................................................................................. 10 Reverse Isolation................................................................................................................................ 10 BGB719N7ESD evaluation board layout ........................................................................................... 11 List of Tables Table 1 Table 2 Electrical Characteristics (at room temperature) .................................................................................. 7 Bill-of-Materials..................................................................................................................................... 8 Application Note AN255, 1.1 4 / 13 2012-01-18 BGB719N7ESD Introduction 1 Introduction Features High performance FM Radio LNA with integrated biasing Frequency range: 10 MHz to 1 GHz Low external parts count Super miniature low profile leadless package TSNP-7-6, 1.26 x 1.4 x 0.37 mm High gain at only 2.8 mA current consumption Integrated active biasing circuit enables stable operation point against temperature-, supply voltage- and processing-variations Integrated ESD protection for all pins (1.5 kV, HBM) High input compression point High input impedance Excellent noise figure from latest SiGe:C technology Operation voltage: 1.5 V to 4.0 V Power-off function Pb-free (RoHS compliant) and halogen-free (WEEE compliant) product Applications Low noise amplifier and active matching for FM reception with small antennas in all kinds of mobile devices such as cell phones, PDAs, portable FM Radio, MP3 players Figure 1 BGB719N7ESD in TSNP-7-6 Package 1.1 Applications FM Radio has a long history to its credit starting from its development in 1933. Today, FM radio is an integral part of almost all mobile phones. In a common mobile phone, the headset cable serves as antenna for FM reception, wherein the antenna size (~75 cm) is a bit relaxed. There is a clear market trend to be able to use FM radio also without the headset cable. The antenna needs then to be integrated inside the phone. But in this case, the space constraint poses a challenge on the antenna Application Note AN255, 1.1 5 / 13 2012-01-18 BGB719N7ESD Performance Overview design. Shrinking the size of the antenna introduces a high loss in the system which deteriorates the receiver performance, namely the receiver sensitivity. Infineon’s latest generation low noise amplifier (LNA) BGB719N7ESD is able to solve this problem by enhancing the receiver sensitivity. Using it in a hand held device also demands low current consumption, power-off function and high linearity due to the co-existence of cellular bands.The LNA is designed for worldwide FM band (76108 MHz) and high ESD robustness at the RF-in port, which supports outstanding ESD robustness on system level. Infineon offers its LNA solution BGB719N7ESD, which fulfills all these performance criteria in a very small and leadless package TSNP-7-6 (1.26 x 1.4 x 0.375 mm). A further highlight of the BGB719N7ESD is an integrated active biasing which enables consistent operation with varying temperature and process variations. It finds its application in all kinds of mobile devices like mobile phones, PDAs, portable FM radio, MP3 players etc. Putting Infineon’s ESD protection diode ESD0P8RFL in front of the LNA improves the system’s ESD performance up to 8 kV contact discharge (IEC61000-4-2) at RF input. The diode is mounted in the small leadless TSLP-4-7 package (1.2 x 0.8 x 0.39 mm) and has a parasitic capacitance of only 0.8 pF. With this application proposal Infineon offers a perfect solution for an ESD robust LNA for embedded FM radio antennas in handsets. The design is suited for miniature and slim handset design due to the small form factor of the TSNP packages. The LNA fits easily into a 8mm x 8mm sized area when using 0402 capacitors. 2 Performance Overview Table 1 gives a quick overview on the performance of the FM Antenna LNA described in this application note. All measurements were performed in a 50Ohm environment. Figure 2 FM Radio application schematic Application Note AN255, 1.1 6 / 13 2012-01-18 BGB719N7ESD Application Information Table 1 Electrical Characteristics (at room temperature) TA = 25°C, VCC = 3.0V, VPD = 3.0 V, ICCq = 3.0 mA, f = 100MHz Parameter Symbol Value Unit Frequency Range Freq 100 MHz DC Voltage Vcc 3 V DC Current Icc 2.8 mA Gain G 13.5 dB Noise Figure NF 1.2 dB Input Return Loss RLin 0.5 dB Output Return Loss RLout 11 dB Reverse Isolation IRev 53 dB Input P1dB IP1dB -6 dBm Input IP3 IIP3 -14 dBm Stability k >1 -- 3 Comment/Test Condition Unconditionally stable up to 10 GHz Application Information In this section, the application circuit for the BGB719N7ESD is described. The circuit requires minimal usage of external SMD components due to the integration of the biasing circuit which saves PCB space and therefore cost. The BGB719N7ESD can be easily matched to electrically short half-loop antennas and monopol antennas. Therefore a single passive element needs to be placed at the input of the LNA. In case of a half-loop antenna a shunt capacitance in the range of 35 pF is needed. If the application uses a monopol antenna, a shunt inductance in the range of 375 nH is required. The application schematic is shown in Figure 3 and the function of each component is explained in Table 2. DC, VCtrl In VCtrl 1 Cin 6 DC, VCC BGB719N7ESD RFIN 2 GNDRF 3 7 CBYP Cout 5 RFOUT 4 NC Out (on package backside) GNDDC Matching Element: Inductance for Monopol Antenna Capacitance for Half Loop Antenna Figure 3 Schematics of the BGB719N7ESD application circuit Application Note AN255, 1.1 7 / 13 2012-01-18 BGB719N7ESD Table 2 Symbol Bill-of-Materials Value Unit Size Manufacturer Comment Matching Element CIN 330 pF Various/0402 Shunt C or L depending on the used FM antenna concept DC Blocking COUT 330 pF Various/0402 DC Blocking CBYP 47 nF Various/0402 Bypass Capacitor 4 Various/0402 Measured Graphs Note: All measurements were performed in a 50Ohm environment. Insertion Power Gain InBand 15 14.5 14 S21 (dB) 13.5 13 12.5 12 11.5 11 10.5 10 70 Figure 4 75 80 85 90 95 Frequency (MHz) 100 105 110 Insertion Power Gain InBand Application Note AN255, 1.1 8 / 13 2012-01-18 BGB719N7ESD Input Matching 0 -0.2 -0.4 -0.6 100 MHz -0.4881 dB -0.8 -1 70 Figure 5 80 90 Frequency (MHz) 100 110 Input Matching Output Matching -5 -6 -7 S22 (dB) -8 -9 -10 -11 -12 -13 -14 -15 70 Figure 6 75 80 85 90 95 Frequency (MHz) 100 105 110 Output Matching Application Note AN255, 1.1 9 / 13 2012-01-18 BGB719N7ESD 0. 8 1.0 Z Parameters Input output matching Swp Max 110MHz 2. 0 0. 6 Z11 0. 4 Z22 3. 0 4. 0 5. 0 0. 2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0 .2 .0 .0 .0 Figure 7 Swp Min 70MHz -1.0 -0 .8 -0 .6 -2 .0 -3 .4 -4 -0 -5 -0 -1 0. 0.2 10 .0 Z Parameters Input output matching Reverse Isolation 80 75 S12 (dB) 70 65 60 55 50 45 40 70 Figure 8 75 80 85 90 95 Frequency (MHz) 100 105 110 Reverse Isolation Application Note AN255, 1.1 10 / 13 2012-01-18 BGB719N7ESD Layout 5 Layout Figure 9 shows the layout and the component placement of the printed circuit board used to assemble and test the LNA. Figure 9 BGB719N7ESD evaluation board layout Application Note AN255, 1.1 11 / 13 2012-01-18 BGB719N7ESD Authors Authors Thomas Schwingshackl, Application Engineer of Business Unit “RF and Protection Devices” Ralph Kuhn, Senior Staff Application Engineer of Business Unit “RF and Protection Devices” ---------------------------------------- Application Note AN255, 1.1 12 / 13 2012-01-18 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN255