B GA 824 N 6 B GA 824 N 6 with i m pro ve d im mu nit y, agains t o ut -o f-b and jam m ers (LTE Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N) Applic atio n N ote A N 326 Revision: Rev.1.0 2013-06-03 RF and P r otecti on D evic es Edition 2013-06-03 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Application Note AN326 Revision History: 2013-06-03 Previous Revision: None Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN326, Rev.1.0 3 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Introduction of Global Navigation Satellite Systems (GNSS) Table of Content 1 Introduction of Global Navigation Satellite Systems (GNSS) ........................................................ 5 2 2.1 2.2 2.3 BGA824N6 Overview .......................................................................................................................... 8 Features ............................................................................................................................................... 8 Key Applications of BGA824N6 ........................................................................................................... 8 Description ........................................................................................................................................... 9 3 3.1 3.2 3.3 Application Circuit and Performance Overview ............................................................................ 10 Summary of Measurement Results .................................................................................................... 10 Summary BGA824N6 as 1550-1615 MHz LNA for GNSS................................................................. 12 Schematics and Bill-of-Materials ........................................................................................................ 13 4 Measurement Graphs ...................................................................................................................... 14 5 Evaluation Board and Layout Information .................................................................................... 22 6 Authors .............................................................................................................................................. 24 7 Remark .............................................................................................................................................. 24 List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 BGA824N6 TSNP-6-2 leadless Package size ..................................................................................... 6 BGA824N6 in TSNP-6-2 ...................................................................................................................... 8 Equivalent Circuit Block diagram of BGA824N6 .................................................................................. 9 Package and pin connections of BGA824N6 ....................................................................................... 9 Schematic of the BGA824N6 Application Circuit ............................................................................... 13 Power gain of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands .............................. 14 Narrowband power gain of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands .......... 14 Noise figure of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands ............................. 15 Input matching of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands ......................... 15 Input matching smith chart for COMPASS, Galileo, GPS and GLONASS bands ............................. 16 Output matching of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands ...................... 16 Output matching smith chart for COMPASS, Galileo, GPS and GLONASS bands .......................... 17 Reverse isolation of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands ..................... 17 Stability factor k of BGA824N6 upto 10 GHz ..................................................................................... 18 Stability factor µ1 of BGA824N6 upto 10 GHz ................................................................................... 18 Stability factor µ2 of BGA824N6 upto 10 GHz ................................................................................... 19 Input 1 dB compression point of BGA824N6 at supply voltage of 1.8 V for COMPASS, Galileo, GPS and GLONASS bands ........................................................................................................................ 19 Input 1 dB compression point of BGA824N6 at supply voltage of 2.8 V for COMPASS, Galileo, GPS and GLONASS bands ........................................................................................................................ 20 Carrier and intermodulation products of BGA824N6 for GPS band .................................................. 20 Carrier and intermodulation products of BGA824N6 for GLONASS band ........................................ 21 Picture of Evaluation Board (overview) .............................................................................................. 22 Picture of Evaluation Board (detailed view) ....................................................................................... 22 PCB Layer Information ....................................................................................................................... 23 List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Pin Assignment of BGA824N6 ............................................................................................................. 9 Pin Assignment of BGA824N6 ............................................................................................................. 9 Electrical Characteristics for COMPASS/Galileo at Vcc = Vpon = 1.8 V ........................................... 10 Electrical Characteristics for COMPASS/Galileo at Vcc = Vpon = 2.8 V ........................................... 11 Bill-of-Materials................................................................................................................................... 13 Application Note AN326, Rev.1.0 4 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Introduction of Global Navigation Satellite Systems (GNSS) 1 Introduction of Global Navigation Satellite Systems (GNSS) The BGA824N6 is a front-end Low Noise Amplifier (LNA) for Global Navigation Satellite Systems (GNSS) application. It is based on Infineon Technologies’ B7HF Silicon-Germanium (SiGe) technology, enabling a cost-effective solution in a TSNP-6-2 leadless package with ultra low noise figure, high linearity, low current consumption and high gain, over a wide range of supply voltages from 1.5 V up to 3.6 V. All these features make BGA824N6 an excellent choice for GNSS LNA as it improves sensitivity, provide better immunity against out-of-band jammer signals, reduces filtering requirement and hence the overall cost of the GNSS receiver. The GNSS satellites are at an orbit altitude of more than 20,000 km away from earth’s surface and transmit power in the range of +47 dBm. After taking losses (atmospheric, antenna etc.) into account, the received signal strength at the GNSS device input is very low in the range of -130 dBm. The ability of the GNSS device to receive such low signal strength and provide meaningful information to the end-user depends strongly on the noise figure of the GNSS receives chain. This ability which is called receiver sensitivity can be improved by using a low-noise amplifier with low noise figure and high gain at the input of the receiver chain. The improved sensitivity results in a shorter Time-To-First-Fix (TTFF), which is the time required for a GNSS receiver to acquire satellite signals and navigation data, and calculate a position. Noise figure of the LNA defines the overall noise figure of the GNSS receiver system. This is where BGA824N6 excels by providing noise figure as low as 0.55 dB and high gain of 17 dB, thereby improving the receiver sensitivity significantly. The ever growing demand to integrate more and more functionality into one device leads to many challenges when transmitter/receiver has to work simultaneously without degrading the performance of each other. In today’s smart-phones a GNSS receiver simultaneously coexists with transceivers in the GSM/EDGE/UMTS/LTE bands. These 3G/4G transceivers transmit high power in the range of +24 dBm which due to insufficient isolation couple to the GNSS receiver. The cellular signals can mix to produce Intermodulation products exactly in the GNSS receiver frequency band. For example, GSM 1712.7 MHz mixes with UMTS 1850 MHz to produce third-order-product exactly at GPS band. To quantify the effect, BGA824N6 Application Note AN326, Rev.1.0 5 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Introduction of Global Navigation Satellite Systems (GNSS) shows out-of-band input IP3 at GPS band of +7 dBm, as a result of frequency mixing between GSM 1712.7 MHz and UMTS 1850 MHz with power levels of -20 dBm. Due to this high out-of-band input 3rd order intercept point (IIP3), BGA824N6 is especially suitable for the GPS function in mobile phones. Figure 1 BGA824N6 TSNP-6-2 leadless Package size As the industry inclines toward assembly miniaturization and also surface mount technology matures, there is a desire to have smaller and thinner components. This is especially the case with portable electronics where higher circuit density allows device design flexibility and also optimum use of the limited space available. BGA824N6 has a small package with dimensions of 0.70mm x 1.1mm x 0.375mm and it requires only one external component at its input, the inductor providing the input matching. The DC block at input is optional as it is usually provided by the pre-filter before the LNA in many GPS applications. All the device/phone manufacturers implement very good power supply filtering on their boards so that the RF bypass capacitor mentioned in this application circuit may not be needed in the end. The minimal number of external SMD components reduces the application bill of materials, assembly complexity and the PCB area thus making it an ideal solution for compact and cost-effective GNSS LNA. The output of the BGA824N6 is internally matched to 50 Ω, and a DC blocking capacitor is integrated on-chip, thus no external component is required at the output Application Note AN326, Rev.1.0 6 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Introduction of Global Navigation Satellite Systems (GNSS) The device also integrates an on-chip ESD protection which can resist until 2 kV (referenced to human body model) in all pins. The integrated power on/off feature provides for low power consumption and increased stand-by time for GNSS handsets. Moreover, the low current consumption (3.8 mA) makes the device suitable for portable technology like GNSS receivers and mobiles phones. The Internal circuit block diagram of the BGA824N6 is presented in Figure 3. Table 1 shows the pin assignment of BGA824N6. Table 2 shows the truth table to turn on/off BGA824N6 by applying different voltage to the PON pin. Application Note AN326, Rev.1.0 7 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers BGA824N6 Overview 2 BGA824N6 Overview 2.1 Features High insertion power gain: 17.0 dB Out-of-band input 3rd order intercept point: +7 dBm Input 1 dB compression point: -6 dBm Low noise figure: 0.55 dB Low current consumption: 3.8 mA Operating frequencies: 1550 - 1615 MHz Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1 V logic high level) Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 1 external SMD component necessary 2 kV HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package 2.2 Key Applications of BGA824N6 Figure 2 BGA824N6 in TSNP-6-2 Ideal for all Global Navigation Satellite Systems (GNSS) like GPS (Global Positioning System) working in the L1 band at 1575.42 MHz GLONASS (Russian GNSS) working in the L1 band from 1598.06 MHz to 1605.38 MHz Galileo1 (European GNSS) working in the E2-L1-E1 band from 1559 MHz to 1592 MHz COMPASS1 (Chinese Beidou Navigation System) working in E2 band at 1561.10 MHz and E1 band at 1589.74 MHz 1 The application circuit (Figure 5) proposed in this Application Note is suitable for GPS and GLONASS bands Application Note AN326, Rev.1.0 8 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers BGA824N6 Overview 2.3 Description The BGA824N6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 17.0 dB gain and 0.55 dB noise figure at a current consumption of 3.8 mA in the application configuration described in Chapter 3. The BGA824N6 is based upon Infineon Technologies B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Figure 3 Equivalent Circuit Block diagram of BGA824N6 3 4 2 5 1 6 Bottom View Figure 4 Table 1 Top View Package and pin connections of BGA824N6 Pin Assignment of BGA824N6 Pin No. Symbol Function 1 GND Ground 2 VCC DC supply 3 AO LNA output 4 GND Ground 5 AI LNA input 6 PON Power on control Table 2 LNA Mode Pin Assignment of BGA824N6 Symbol ON/OFF Control Voltage at PON pin Min Max ON PON, on 1.0 V VCC OFF PON, off 0V 0.4 V Application Note AN326, Rev.1.0 9 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Application Circuit and Performance Overview 3 Application Circuit and Performance Overview Device: Application: BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers (LTE Band-13, GSM850/900/1800, UMTS, WLAN) PCB Marking: BGA824N6 3.1 Summary of Measurement Results Table 3 Electrical Characteristics for COMPASS/Galileo at Vcc = Vpon = 1.8 V Parameter Symbol Value Unit Comment/Test Condition DC Voltage Vcc 1.8 V DC Current Icc 3.9 mA Navigation System Sys GPS GLONASS Frequency Range Freq 1575.42 1598-1606 MHz Gain G 15.3 15 dB Noise Figure NF 1.97 2.31 dB Input Return Loss RLin 10.3 14.2 dB Output Return Loss RLout 24.3 13.1 dB Reverse Isolation IRev 24.6 24.6 dB Input P1dB IP1dB -8.3 -8 dBm Output P1dB OP1dB 6 6 dBm Input IP3 In-band IIP3 -4.9 -3.6 dBm Output IP3 In-band OIP3 10.4 11.4 LTE band-13 nd 2 Harmonic H2 -88.6 Output IM2 Out-of-band IM2 -104.7 f1 = 827 MHz, P1IN = +12 dBm; f2 = 2402 MHz, P2IN = +8 dBm ; fIM2 = 1575 MHz Output IM2 Out-of-band IM2 -109.7 f1 = 897 MHz, P1IN = +12 dBm; f2 = 2472 MHz, P2IN = +8 dBm ; fIM2 = 1575 MHz Input IP3 Out-of-band IIP3OOB 67.4 Stability k >1 Application Note AN326, Rev.1.0 PCB and SMA losses 0.06dB are substracted Fgps = 1575.42 MHz FGLONASS = 1605 MHz f1gps = 1575.42 MHz, f2gps = 1576.42 MHz dBm F1GLONASS = 1602 MHz, F2GLONASS = 1603 MHz Input power= -30 dBm fIN = 787.76 MHz, PIN = +15 dBm; fH2 = 1575.52 MHz f1 = 1712.7 MHz, P1IN = +10 dBm; f2 = 1850 MHz, P2IN = +10 dBm; fIIP3 = 1575.4 MHz -10 / 25 Unconditionnally Stable from 0 to 10GHz 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Application Circuit and Performance Overview Table 4 Electrical Characteristics for COMPASS/Galileo at Vcc = Vpon = 2.8 V Parameter Symbol Value Unit DC Voltage Vcc 2.8 V DC Current Icc 4.1 mA Navigation System Sys GPS GLONASS Frequency Range Freq 1575.42 1598-1606 MHz Gain G 15.4 15.2 dB Noise Figure NF 1.99 2.33 dB Input Return Loss RLin 10.4 14.8 dB Output Return Loss RLout 28.7 14.2 dB Reverse Isolation IRev 25 25 dB Input P1dB IP1dB -5.2 -4.8 dBm Output P1dB OP1dB 9.2 9.4 dBm Input IP3 In-band IIP3 -4.9 -3.5 dBm Comment/Test Condition PCB and SMA losses 0.06dB are substracted Fgps = 1575.42 MHz FGLONASS = 1605 MHz f1gps = 1575.42 MHz, f2gps = 1576.42 MHz dBm F1GLONASS = 1602 MHz, F2GLONASS = 1603 MHz Input power= -30 dBm fIN = 787.76 MHz, PIN = +15 dBm; fH2 = 1575.52 MHz Output IP3 In-band OIP3 LTE band-13 nd 2 Harmonic H2 -89 Output IM2 Out-of-band IM2 -105 f1 = 827 MHz, P1IN = +12 dBm; f2 = 2402 MHz, P2IN = +8 dBm ; fIM2 = 1575 MHz Output IM2 Out-of-band IM2 -110 f1 = 897 MHz, P1IN = +12 dBm; f2 = 2472 MHz, P2IN = +8 dBm ; fIM2 = 1575 MHz Input IP3 Out-of-band IIP3OOB 67.5 f1 = 1712.7 MHz, P1IN = +10 dBm; f2 = 1850 MHz, P2IN = +10 dBm; fIIP3 = 1575.4 MHz Stability k >1 Application Note AN326, Rev.1.0 10.5 11.7 -- 11 / 25 Unconditionnally Stable from 0 to 10GHz 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Application Circuit and Performance Overview 3.2 Summary BGA824N6 as 1550-1615 MHz LNA for GNSS This application note addresses the issue of out-of-band jammers and improving the immunity of BGA824N6 against LTE Band-13, GSM850/900/1800, UMTS and WLAN jammers. The jamming resistance of BGA824N6 against these jammers is improved by increasing the attenuation of the circuit at these specific out-of-band frequencies (787 MHz, 827 MHz, 897 MHz, 1712 MHz, 1850 MHz, 2402 MHz, and 2472 MHz). This is achieved by using external SMDs and a SAW filter before BGA824N6. In some applications where more rejection is required at special frequencies and SAW filter alone cannot provide sufficient attenuation, some external notches can be designed for those frequencies. The notches L1-C1/L2-C2 and L3-C3 are designed for 750-950 MHz range and 2.45 GHz respectively. The component values are fine tuned so as to have optimal noise figure, jammer rejection, gain and input matching. The circuit requires only eight 0402 passive components including the notch filters. It has in band gain of 15 dB. The circuit achieves input return loss better than 10.3 dB, as well as output return loss better than 13.1 dB. At room temperature the noise figure is 1.97 dB (SMA and PCB losses are subtracted) for the GPS frequecncy. Furthermore, the circuit is unconditionally stable till 10 GHz. At 1575.42 MHz, using two tones spacing of 1 MHz, the output third order intercept point OIP3 reaches 10.5 dBm. And for the GLONASS frequency band, OIP3 reaches 11.7 dBm. Input P1dB of the GNSS LNA is about -5.2 dBm for the GPS frequency and -4.8 dBm for GLONASS frequency band. The out of band IIP3 reaches 67.5 dBm at room temperature at 1575.4 MHz frequency. And this circuit shows very good H2 performance of -89 dBm for GPS frequency. Application Note AN326, Rev.1.0 12 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Application Circuit and Performance Overview 3.3 Schematics and Bill-of-Materials Figure 5 Schematic of the BGA824N6 Application Circuit Table 5 Symbol Bill-of-Materials Value Unit Size Manufacturer Comment L1 4.3 nH 0201 Murata LQP type 750-950 MHz Notch C1 9 pF 0201 Various 750-950 MHz Notch L2 4.7 nH 0201 Murata LQP type 750-950 MHz Notch C2 7 pF 0201 Various 750-950 MHz Notch L3 2.9 nH 0201 Murata LQP type 2.45 GHz Notch C3 1.2 pF 0201 Various 2.45 GHz Notch L4 6.8 nH 0201 Murata LQP type Matching between SAW and LNA C4 (optional) 10 nF 0201 Various RF bypass Infineon N1 BGA824N6 TSNP-6-2 N2 SAW TSNP-7-10 Application Note AN326, Rev.1.0 SiGe LNA SAW filter of BGM1033N7 used in this application circuit 13 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Measurement Graphs 4 Measurement Graphs Wideband Gain 30 VCC=1p8V 1.57542 GHz 15.4 dB 10 S21 (dB) -10 VCC=2p8V 0.78776 GHz -69.2 dB -30 -50 2.45000 GHz -58.7 dB -70 -90 0 Figure 6 1 2 3 Frequency (GHz) 4 5 6 Power gain of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Narroband Gain 18 VCC=1.8V 17 1.6050 GHz 15.22 dB 16 S21 (dB) VCC=2.8V 1.5754 GHz 15.40 dB 15 1.5754 GHz 15.27 dB 14 1.6050 GHz 15.04 dB 13 12 1.5 Figure 7 1.53 1.56 1.59 Frequency (GHz) 1.62 1.65 Narrowband power gain of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Application Note AN326, Rev.1.0 14 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Measurement Graphs Noise figure 3 NF (dB) 2.5 1.605 GHz 2.310 dB 2 1.575 GHz 1.970 dB Vcc=1.8V Vcc=2.8V 1.5 1.559 Figure 8 1.569 1.579 1.589 Frequency (GHz) 1.599 1.609 1.615 Noise figure of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Input return loss -5 1.5754 GHz -10.28 dB S11 (dB) -10 1.5754 GHz -10.41 dB -15 1.6050 GHz -14.19 dB Vcc=1.8V 1.6050 GHz -14.83 dB Vcc=2.8V -20 1.5 Figure 9 1.53 1.56 1.59 Frequency (GHz) 1.62 1.65 Input matching of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Application Note AN326, Rev.1.0 15 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Measurement Graphs 6 0. 0.8 1.0 Input return loss ( Smith chart) Swp Max 1.615GHz 2. 0 Vcc=1.8V Vcc=2.8V 0 3. 0. 4 0 4. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.4 0 0.2 1.605 GHz r 0.963 x -0.389 0.6 10.0 1.605 GHz r 0.977 x -0.363 -10.0 2 -0. .0 -2 Swp Min 1.559GHz -1.0 -0.8 -0 .6 1.575 GHz r 0.961 x -0.632 -3 .0 Figure 10 -4 .0 -5. 0 .4 -0 1.575 GHz r 0.994 x -0.632 Input matching smith chart for COMPASS, Galileo, GPS and GLONASS bands Output return loss -5 S22 (dB) -10 -15 1.605 GHz -13.06 dB -20 1.605 GHz -14.18 dB 1.5754 GHz -24.26 dB Vcc=1.8V -25 1.5754 GHz -28.71 dB Vcc=2.8V -30 1.5 Figure 11 1.53 1.56 1.59 Frequency (GHz) 1.62 1.65 Output matching of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Application Note AN326, Rev.1.0 16 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Measurement Graphs Swp Max 1.615GHz 2. 0 6 0. 0.8 1.0 Output return loss (Smith chart) Vcc=1.8V 10.0 5.0 4.0 1.5754 GHz 10.0 r 1.03 x -0.071 3.0 1.0 0.8 0.6 0.4 5.0 1.605 GHz r 1.05 x -0.467 -4 .0 -5. 0 .0 -2 Swp Min 1.559GHz -1.0 -0.8 -0 .6 1.605 GHz r 1.09 x -0.408 -3 .0 .4 -0 Figure 12 0 4. -10.0 0 0.2 0.2 2 -0. Vcc=2.8V 2.0 0. 4 1.5754 GHz r 1.03 x -0.123 0 3. Output matching smith chart for COMPASS, Galileo, GPS and GLONASS bands Revese isolation -20 1.5754 GHz -24.6 dB 1.605 GHz -24.59 dB Vcc=1.8V Vcc=1.8V S12 (dB) -25 1.5754 GHz -25.02 dB -30 1.605 GHz -25.01 dB -35 -40 1.5 Figure 13 1.53 1.56 1.59 Frequency (GHz) 1.62 1.65 Reverse isolation of BGA824N6 for COMPASS, Galileo, GPS and GLONASS bands Application Note AN326, Rev.1.0 17 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Measurement Graphs Stability K factor 5 Vcc=1.8V Vcc=2.8V 4 3 2 1 0 0 Figure 14 2 4 6 Frequency (GHz) 8 10 Stability factor k of BGA824N6 upto 10 GHz Stability Mu1 factor 2 Vcc=1.8V Vcc=2.8V 1.5 1 0.5 0 Figure 15 2 4 6 Frequency (GHz) 8 10 Stability factor µ1 of BGA824N6 upto 10 GHz Application Note AN326, Rev.1.0 18 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Measurement Graphs Stability Mu2 factor 2 1.5 1 Vcc=1.8V Vcc=2.8V 0.5 0 Figure 16 2 4 6 Frequency (GHz) 8 10 Stability factor µ2 of BGA824N6 upto 10 GHz 1dB compression point at Vcc=1.8 V 18 P1dB at Vcc=1.8V GPS P1dB at Vcc=1.8V GLONASS 17 -30 dBm 15.22 dB Gain (dB) 16 -7.962 dBm 14.03 dB 15 -30 dBm 15.03 dB 14 -8.329 dBm 14.22 dB 13 12 -30 Figure 17 -25 -20 -15 Power (dBm) -10 -5 0 Input 1 dB compression point of BGA824N6 at supply voltage of 1.8 V for COMPASS, Galileo, GPS and GLONASS bands Application Note AN326, Rev.1.0 19 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Measurement Graphs Input P1dB compression point at Vcc=2.8 V 18 P1dB at Vcc=2.8V GPS P1dB at Vcc=2.8V GLONASS 17 -30 dBm 15.35 dB Gain (dB) 16 -4.814 dBm 14.22 dB 15 -30 dBm 15.21 dB 14 -5.227 dBm 14.36 dB 13 12 -30 Figure 18 -25 -20 -15 Power (dBm) -10 -5 0 Input 1 dB compression point of BGA824N6 at supply voltage of 2.8 V for COMPASS, Galileo, GPS and GLONASS bands Intermodulation for GPS Band at Vcc=2.8 V 0 -20 Power (dBm) 1.57642 GHz -14.63 dB 1.57542 GHz -14.52 dB -40 -60 1.57742 GHz -64.75 dB 1.57442 GHz -66.02 dB -80 -100 -120 1.57342 Figure 19 1.57542 Frequency (GHz) 1.57742 1.57842 Carrier and intermodulation products of BGA824N6 for GPS band Application Note AN326, Rev.1.0 20 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Measurement Graphs Intermodulation for GLONASS Band at Vcc=2.8 V 0 -20 Power (dBm) 1.603 GHz -14.68 dB 1.602 GHz -14.76 dB -40 1.601 GHz -68.32 dB -60 1.604 GHz -67.68 dB -80 -100 -120 1.6 Figure 20 1.601 1.602 1.603 Frequency (GHz) 1.604 1.605 Carrier and intermodulation products of BGA824N6 for GLONASS band Application Note AN326, Rev.1.0 21 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Evaluation Board and Layout Information 5 Evaluation Board and Layout Information In this application note, the following PCB is used: PCB material: FR4 r of PCB material: 4.3 Figure 21 Picture of Evaluation Board (overview) Figure 22 Picture of Evaluation Board (detailed view) Application Note AN326, Rev.1.0 22 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Evaluation Board and Layout Information Vias FR4, 0.2mm Copper 35µm Figure 23 FR4, 0.8mm PCB Layer Information Application Note AN326, Rev.1.0 23 / 25 2013-06-03 BGA824N6 BGA824N6 with improved immunity, against out-of-band jammers Authors 6 Authors Moakhkhrul Islam, Application Engineer of Business Unit “RF and Protection Devices”. Jagjit Singh Bal, Application Engineer of Business Unit “RF and Protection Devices” 7 Remark The graphs are generated with the simulation program AWR Microwave Office®. Application Note AN326, Rev.1.0 24 / 25 2013-06-03 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG AN326