PTAC260302FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs. Features include input matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620, 2655, 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 2620 MHz 2655 MHz 2690 MHz -20 50 -30 40 -40 30 Efficiency ACP Up ACP Low -50 -60 20 c260302f c_gr1 28 30 32 34 36 38 40 42 • Asymmetric design • Broadband internal matching • Typical CW performance, 2690 MHz, 28 V (Doherty configuration, combined output) - Output power @ P3dB = 30 W - Efficiency = 54% - Gain = 13 dB • Typical single-carrier WCDMA performance, 2690 MHz, 28 V, 10 dB PAR - Output power = 37.5 dBm avg - Gain = 15.5 dB - Efficiency = 45% • Capable of handling 10:1 VSWR @ 32 V, 30 W (CW) output power • Integrated ESD protection • Pb-free and RoHS compliant 60 Drain Efficiency(%) ACP Up and ACP Low (dBc) -10 PTAC260302FC Package H-37248H-4 10 44 Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Measurements (tested in Infineon Doherty test fixture) VDD = 28 V, IDQ = 85 mA, VGS1 = 1.1 V, POUT = 5.6 W avg, ƒ = 2690 MHz, 3GPP WCDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 14.5 15.5 — dB Drain Efficiency ηD 42 45 — % ACPR — –27 –25 dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet – DRAFT ONLY 1 of 9 Rev. 03, 2013-03-07 PTAC260302FC Confidential, Limited Internal Distribution DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.8 — Ω (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.6 — Ω VDS = 28 V, IDQ = 0.085 A VGS 2 2.7 3.5 V VDS = 28 V, IDQ = 0 A VGS 0.4 1.1 1.8 V VGS = 10 V, VDS = 0 V IGSS — — 1 µA Operating Gate Voltage (main) (peak) Gate Leakage Current Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Junction Temperature TJ 200 °C TSTG –65 to +150 °C Storage Temperature Range Thermal Resistance (main) (TCASE 70°C, 30 W CW) RqJC 1.5 °C/W (peak) (TCASE 70°C, 30 W CW) RqJC 1.7 °C/W Ordering Information Type and Version Order Code Package and Description Shipping PTAC 260302FC V1 PTAC260302FCV1XWSA1 H-37248H-4, Ceramic open-cavity, earless Tray PTAC 260302FC V1 R250 PTAC260302FCV1R250XTMA1 H-37248H-4, Ceramic open-cavity, earless Tape & Reel Data Sheet – DRAFT ONLY 2 of 9 Rev. 03, 2013-03-07 PTAC260302FC Confidential, Limited Internal Distribution Pinout Diagram (top view) S Main D1 D2 G1 G2 Pin D1 D2 G1 G2 S (flange) H-34284H-4_sl_do_pd_10-10-2012 Peak Description Drain device 1 (peak) Drain device 2 (main) Gate device 1 (peak) Gate device 2 (main) Source Lead connections for PTAC260302FC Single-carrier WCDMA Broadband Single-carrier WCDMA Broadband VDD = 28 V, IDQ = 85 mA, POUT = 37.5 dBm, 3GPP WCDMA signal, 10 dB PAR VDD = 28 V, IDQ = 85 mA, POUT = 37.5 dBm, 3GPP WCDMA signal, 10 dB PAR Efficiency Gain (dB) 17 16 -5 -5 46 -10 -10 45 44 Gain 15 43 14 42 13 41 12 2580 ACP Up (dBc) 18 47 Drain Efficiency (%) 19 2660 2700 40 2740 Data Sheet – DRAFT ONLY -20 -25 -25 -30 -30 ACP Up -40 2580 Frequency (MHz) -15 -20 -35 c260302f c_gr5 2620 Return Loss -15 Return Loss (dB) Typical Performance (data taken in a production test fixture) -35 -40 2740 c260302f c_gr6 2620 2660 2700 Frequency (MHz) 3 of 9 Rev. 03, 2013-03-07 PTAC260302FC Confidential, Limited Internal Distribution Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2655 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 60 40 Efficiency 16 20 Gain 12 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 c260302f c_gr2 28 32 36 40 -60 60 20 16 20 Gain 12 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 c260302f c_gr3 28 44 36 40 Single-carrier WCDMA Drive-up CW Performance VDD = 28 V, IDQ = 85 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth VDD = 28 V, IDQ = 85 mA, ƒ = 2620, 2655, 2690 MHz 24 60 Efficiency 18 17 20 Gain 12 0 8 -20 Gain (dB) 16 4 50 Gain 16 45 15 40 14 35 13 PAR @ 0.01% CCDF 11 c260302f c_gr4 32 36 40 -60 25 20 10 44 c260302f c_gr7 30 Average Output Power (dBm) Data Sheet – DRAFT ONLY 30 2620 MHz 2655 MHz 2690 MHz 12 -40 28 55 40 Efficiency 0 -60 44 19 60 Efficency (%) Peak/Average Ratio (dB), Gaun (dB) 32 Average Output Power (dBm) Average Output Power (dBm) 20 40 Efficiency 32 34 36 38 40 42 Efficiency (%) 20 24 Efficency (%) 24 Peak/Average Ratio (dB), Gaun (dB) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth Efficency (%) Peak/Average Ratio (dB), Gaun (dB) Typical Performance (cont.) 44 15 46 Output Power (dBm) 4 of 9 Rev. 03, 2013-03-07 PTAC260302FC Confidential, Limited Internal Distribution Typical Performance (cont.) CW Performance at selected VDD CW Performance at selected VDD IDQ = 85 mA, ƒ = 2620 MHz IDQ = 85 mA, ƒ = 2655 MHz 16 18 55 17 50 Gain 15 45 14 40 13 35 VDD = 24 V VDD = 28 V VDD = 32 V 12 11 10 c260302f c_gr8 30 32 34 36 38 40 42 44 50 Gain 15 45 14 40 13 35 12 25 11 20 10 VDD = 24 V VDD = 28 V VDD = 32 V 25 30 32 34 36 38 40 42 44 CW Performance at selected VDD Small Signal CW Gain & Input Return Loss IDQ = 85 mA, ƒ = 2690 MHz VDD = 28 V, IDQ = 85 mA 65 60 Efficiency 17 17.5 0 15.0 -2 55 15 45 14 40 13 35 VDD = 24 V VDD = 28 V VDD = 32 V 12 11 10 32 34 36 38 40 42 44 -6 10.0 -8 7.5 25 2.5 20 0.0 1950 46 -10 -12 -14 IRL -16 3150 c260302f c_gr11 2150 2350 2550 2750 2950 Frequency (MHz) Output Power (dBm) Data Sheet – DRAFT ONLY -4 Gain 5.0 30 c260302f c_gr10 30 12.5 Gain (dB) 50 Efficiency (%) Gain 16 20 46 Output Power (dBm) 19 Gain (dB) 30 c260302f c_gr9 Output Power (dBm) 18 55 16 30 46 60 Efficiency Input Return Loss (dB) Gain (dB) 17 60 65 Efficiency (%) Efficiency 19 Gain (dB) 18 65 Efficiency (%) 19 5 of 9 Rev. 03, 2013-03-07 PTAC260302FC Confidential, Limited Internal Distribution Load Pull Performance Z Source Z Load D S G G D Main Side – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 85 mA P1dB Max Output Power Freq [MHz] Zs Ω Zl Ω Gain [dB] POUT dBm Max PAE POUT [W] Zl Ω PAE % Gain [dB] POUT [dBm] POUT [W] PAE % 2620 26 – j22 10.9 – j9.7 19.7 42.36 17.2 61.0 5.9 – j7.0 21.6 40.70 11.7 66.4 2655 33 – j32 12.7 – j9.6 20.0 42.45 17.6 59.8 7.1 – j8.1 21.4 41.36 13.7 65.9 2690 55 – j34 15.2 – j11.4 19.3 42.86 19.3 55.1 6.8 – j9.0 21.2 41.33 13.6 64.4 Peak Side – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 115 mA P1dB Max Output Power Freq [MHz] Zs Ω Zl Ω Gain [dB] POUT dBm Max PAE POUT [W] PAE % Zl Ω Gain [dB] POUT [dBm] POUT [W] PAE % 2620 36 - j41 11.5 - j14.9 19.6 43.11 20.5 58.8 6.4 - j13.4 20.9 41.92 15.6 63.9 2655 42 - j31 11.9 - j12.7 20 43.09 20.4 61.1 7.0 - j13.9 20.8 42.07 16.1 63.2 2690 55 - j33 12.9 - j15.0 19.5 42.87 19.4 57.2 7.8 - j15.1 20.5 42.16 16.4 61.8 Reference Circuit DUT PTAC2603022FC Test Fixture Part No. LTA/PTAC260302FC PCB Rogers 4350, 0.762 mm [.030"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower) Data Sheet – DRAFT ONLY 6 of 9 Rev. 03, 2013-03-07 PTAC260302FC Confidential, Limited Internal Distribution Reference Circuit (cont.) R04350, 030 R04350 030 (61) (105) VGSpeak VDD C105 C101 C201 PTAC260302FC R101 C102 C103 C208 R104 C104 RF_IN C203 C205 C202 R103 S1 RF_OUT C206 R102 C106 VGSmain VDD C204 C207 PTAC260302F_OUT_03_D PTAC260302F_IN_03_D c260302f c_cd_3-7- 13 Reference circuit assembly diagram (not to scale) Component Information Component Description Suggested Manufacturer P/N C101, C103 Capacitor, 10 µF, 50 V Panasonic Electronic Components EEV-HD1H100P C102, C104, C105, C106 Chip capacitor, 18 pF ATC ATC100A180JW150XB R101 Resistor, 50 Ohm Anaren C16A50Z4 R102 Resistor, 20 Ohm Panasonic Electronic Components ERJ-8GEYJ200V R103, R104 Resistor, 10 Ohm Panasonic Electronic Components ERJ-3GEYJ100V S1 Hybrid coupler Anaren X3C25P1_05S C201, C202 Chip capacitor, 18 pF ATC ATC100A180JW150XB C203, C207 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C204, C205 Chip capacitor, 18 pF ATC ATC100A180JW150XB C206, C208 Capacitor, 220 µF, 35 V Panasonic Electronic Components EEE-FP1V221AP Input Output Data Sheet – DRAFT ONLY 7 of 9 Rev. 03, 2013-03-07 PTAC260302FC Confidential, Limited Internal Distribution Package Outline Specifications Package H-37248H-4 >@ ;' [ >@ >@ ' ' ; >@ * ;5 > 5 @ >@ >@ &/ * &/ ; >@ >@ >@63+ ; >@ >@ >@ ++BVOBB >@ 6 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. (Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower) Data Sheet – DRAFT ONLY 8 of 9 Rev. 03, 2013-03-07 PTAC260302FC V1 Confidential, Limited Internal Distribution Revision History: Previous Version: Page all 3–7 2013-03-07 2012-11-28, Advance Specification Subjects (major changes since last revision) Product released to production. All information updated. Performance graphs, load pull and circuit information added. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: ([email protected]) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2013-03-07 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet – DRAFT ONLY 9 of 9 Rev. 03, 2013-03-07