Datasheet IPL60R180P6

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor
IPL60R180P6
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
600VCoolMOS™P6PowerTransistor
IPL60R180P6
1Description
ThinPAK8x8
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•IncreasedMOSFETdv/dtruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Drain
Pin 5
Gate
Pin 1
Driver
Source
Pin 2
Applications
Power
Source
Pin 3,4
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
180
mΩ
Qg.typ
44
nC
ID,pulse
62
A
[email protected]
5.7
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
Package
Marking
IPL60R180P6
PG-VSON-4
6R180P6
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
22.4
14.1
A
TC=25°C
TC=100°C
-
62
A
TC=25°C
-
-
497
mJ
ID=3.9A; VDD=50V; see table 10
EAR
-
-
0.75
mJ
ID=3.9A; VDD=50V; see table 10
Avalanche current, repetitive
IAR
-
-
3.9
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
100
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
176
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
19.4
A
TC=25°C
Diode pulse current
IS,pulse
-
-
62
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Maximum diode commutation speed
dif/dt
-
-
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
1)
Limited by Tj max. Maximum duty cycle D=0.75
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
4
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
0.71
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient
RthJA
for SMD version
-
-
45
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
°C/W
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave & reflow
soldering allowed
-
-
260
°C
Final Data Sheet
Tsold
5
reflow MSL3
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
4.0
4.5
V
VDS=VGS,ID=0.75mA
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.162
0.421
0.180
-
Ω
VGS=10V,ID=9A,Tj=25°C
VGS=10V,ID=9A,Tj=150°C
Gate resistance
RG
-
1.6
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
3.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
2080
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
89
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1)
Co(er)
-
72
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance,
time related2)
Co(tr)
-
313
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
12.5
-
ns
VDD=400V,VGS=13V,ID=11.3A,
RG=1.7Ω;seetable9
Rise time
tr
-
7.6
-
ns
VDD=400V,VGS=13V,ID=11.3A,
RG=1.7Ω;seetable9
Turn-off delay time
td(off)
-
40
-
ns
VDD=400V,VGS=13V,ID=11.3A,
RG=1.7Ω;seetable9
Fall time
tf
-
5.8
-
ns
VDD=400V,VGS=13V,ID=11.3A,
RG=1.7Ω;seetable9
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
13
-
nC
VDD=400V,ID=11.3A,VGS=0to10V
Gate to drain charge
Qgd
-
15
-
nC
VDD=400V,ID=11.3A,VGS=0to10V
Gate charge total
Qg
-
44
-
nC
VDD=400V,ID=11.3A,VGS=0to10V
Gate plateau voltage
Vplateau
-
6.1
-
V
VDD=400V,ID=11.3A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
6
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=11.3A,Tj=25°C
350
-
ns
VR=400V,IF=11.3A,diF/dt=100A/µs;
see table 8
-
5.3
-
µC
VR=400V,IF=11.3A,diF/dt=100A/µs;
see table 8
-
28
-
A
VR=400V,IF=11.3A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
7
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
200
1 µs
10 µs
180
100 µs
101
160
1 ms
140
DC
ID[A]
Ptot[W]
10 ms
100
120
100
10-1
80
60
10-2
40
20
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
1 µs
10 µs
101
100 µs
1 ms
100
ID[A]
ZthJC[K/W]
10 ms
100
DC
10-1
0.5
0.2
10-1
0.1
0.05
0.02
-2
10
0.01
single pulse
-3
10
100
101
102
103
10
-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
8
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
65
40
20 V
60
20 V
10 V
10 V
35
55
50
8V
30
8V
45
7V
35
ID[A]
ID[A]
7V
25
40
30
25
20
6V
15
20
10
15
10
5
5
0
5.5 V
6V
4.5 V
0
5
5.5 V
5V
5V
4.5 V
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
1.50
0.45
1.40
0.40
1.30
1.20
0.35
1.10
0.30
RDS(on)[Ω]
RDS(on)[Ω]
1.00
0.90
5.5 V
0.80
6.5 V
6V
7V
0.70
10 V
0.25
typ
98%
0.20
0.60
0.50
0.15
20 V
0.40
0.10
0.30
0.20
0
5
10
15
20
25
30
35
40
45
0.05
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=9.0A;VGS=10V
9
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
70
10
9
60
25 °C
8
50
120 V
480 V
7
6
VGS[V]
ID[A]
40
150 °C
30
5
4
3
20
2
10
1
0
0
2
4
6
8
10
12
0
14
0
10
VGS[V]
20
30
40
50
125
150
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=11.3Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
500
25 °C
125 °C
450
400
350
101
IF[A]
EAS[mJ]
300
100
250
200
150
100
50
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=3.9A;VDD=50V
10
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
700
680
Ciss
660
103
620
C[pF]
VBR(DSS)[V]
640
600
102
Coss
580
101
560
Crss
540
520
-75
-50
-25
0
25
50
75
100
125
150
175
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
7
6
Eoss[µJ]
5
4
3
2
1
0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9switchingtimes(ss)
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
td(off)
tr
ton
tf
toff
Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
7PackageOutlines
Figure1OutlinePG-VSON-4,dimensionsinmm/inches
Final Data Sheet
13
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
8AppendixA
Table11RelatedLinks
• IFXCoolMOSTMP6Webpage:www.infineon.com
• IFXCoolMOSTMP6applicationnote:www.infineon.com
• IFXCoolMOSTMP6simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
14
Rev.2.0,2014-05-16
600VCoolMOS™P6PowerTransistor
IPL60R180P6
RevisionHistory
IPL60R180P6
Revision:2014-05-16,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-05-16
Release of final version
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
15
Rev.2.0,2014-05-16