A p p l i c a t i o n N o t e , R e v . 2 . 1 , J u l y 2 01 0 A p p li c a t i o n N o t e N o . 1 8 1 F M R ad i o L N A u s i n g B G B 7 0 7 L 7 E S D m a t c h e d t o 5 0 Ω, i n c l u di n g a p p l i c at i o n p r o p o s a l f o r E S D p r o te c t i o n R F & P r o t e c ti o n D e v i c e s Edition 2010-07-07 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2010. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. 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Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Application Note No. 181 Application Note No. 181 Revision History: 2010-07-07, Rev. 2.1 Previous Version:Rev. 2.0 Page Subjects (major changes since last revision) 6 figure 2 pinout names of BGB707 updated 8 figure 6 pinout names of BGB707 updated Application Note 3 Rev. 2.1, 2010-07-07 Application Note No. 181 Introduction 1 Introduction FM Radio has a long history to its credit starting from its development in 1933. Today, FM radio is an integral part of almost all mobile phones. In a common mobile phone, the headset cable serves as antenna for FM reception, wherein the antenna size (~75 cm) is a bit relaxed. There is a clear market trend to be able to use FM radio also without the headset cable. The antenna needs then to be integrated inside the phone. But in this case, the space constraint poses a challenge on the antenna design. Shrinking the size of the antenna introduces a high loss in the system which deteriorates the receiver performance, namely the receiver sensitivity. Infineon’s latest generation low noise amplifier (LNA) BGB707L7ESD is able to solve this problem by enhancing the receiver sensitivity. Using it in a hand held device also demands low current consumption, power-off function and high linearity due to the co-existence of cellular bands.The LNA is designed for worldwide FM band (76108 MHz) and high ESD robustness at the RF-in port, which supports outstanding ESD robustness on system level. Infineon offers its LNA solution BGB707L7ESD, which fulfills all these performance criteria in a very small and leadless package TSLP-7-1 (2.0 x 1.3 x 0.4 mm). A further highlight of the BGB717L7EDS is an integrated active biasing which enables consistent operation with varying temperature and process variations. It finds its application in all kinds of mobile devices like mobile phones, PDAs, portable FM radio, MP3 players etc. With this application proposal Infineon offers a perfect solution for a ESD robust LNA for embedded FM radio antennas in handsets. The design is suited for miniature and slim handset design due to the small form factor of the TSLP packages. Figure 1 Pictures of evaluation board Application Note 4 Rev. 2.1, 2010-07-07 Application Note No. 181 Performance Overview 2 Performance Overview The following table gives a quick overview on the performance of the FM Antenna LNA described in this application note. Table 1 Electrical characteristics at TA = 25°C, VCC = 2.8V, VCtrl = 2.8V, f = 100MHz Parameter Symbol Values Min. Typ. Unit Max. Insertion power gain |S21| 2 15 dB Input return loss RLIN RLOUT F50ohm 7.5 dB 14.5 dB 1.35 dB Input 1dB gain compression point1) P-1dB -10 dBm Input 3rd Order Intercept Point2) IIP3 -6 dBm Output return loss Noise figure (Zs=50Ohm) Quiescent supply current ICCq 4.2 mA 1) Icc increases as RF input level approaches P-1dB 2) IP3 value depends on termination of all intermodulation frequency components. Termination used for the measurement is 50 Ω from 0.1 to 6 GHz 3 Application Circuit In this section, the application circuit for the BGB707L7ESD is described. The circuit requires minimal usage of external SMD components due to the integration of the biasing circuit which saves PCB space and therefore cost. The application schematic is shown in Figure 2 and the function of each component is explained in Table 2. DC, Vcc BGB 707L7ESD R1 Internal Biasing VCC 2 C1 L1 DC, Von 6 1 C2 C4 Adj 5 R3 VCtrl VBias 3 C5 4 LNA RFIn RFOut 7 (on pac k age back s ide) In C3 R2 Out schematic_diagram .vsd Figure 2 Application schematic for FM Radio Application Note 5 Rev. 2.1, 2010-07-07 Application Note No. 181 Application Circuit Table 2 Bill of material Component Value Manufacturer/Type Function C1 330 pF Various / 0402 DC blocking C2 47 nF Various / 0402 RF bypass C3 330 pF Various / 0402 DC blocking C4 47 nF Various / 0402 RF bypass C5 330 pF Various / 0402 DC blocking R1 4.7 kΩ Various / 0402 Current adjustment R2 680 Ω Various / 0402 Feedback, matching R3 180 Ω Various / 0402 Stability, output matching L1 470 nH Taiyo Yuden LK1608R47K-T / 0603 RF choke, value and size important for stability IC1 BGB707L7ESD Infineon / TSLP-7-1 NC NC Figure 3 shows the layout and the component placement of the PCB used to assemble and test the LNA 0R NC R1 R3 NC C2 C4 L1 IC1 NC C1 R2 NC C3 C5 layout.vsd Figure 3 PCB layout Figure 4 Picture of circuit Application Note 6 Rev. 2.1, 2010-07-07 Application Note No. 181 Application Circuit 3.1 ESD protection improvement for the FM Radio application circuit More and more electrostatic discharge (ESD) protection performance according IEC61000-4-2 is demanded for electronic products. To enhance the ESD robustness of the BGB707L7ESD to the more stringent requirement according IEC610004-2, an external ESD protection circuit should be implemented. The ESD protection configuration has no impact on any performance parameter. Figure 5 IEC6000 4-2 ESD Pulse For an ESD event (see Figure 5), the dynamic peak clamping voltage (stated after 1...2 ns, the IEC61000-4-2 ESD strike started) has to be kept as low as possible. The external ESD protection circuit is show in Figure 6. The Infineon TVS diode ESD0P4RFL in parallel together with the DC decoupling capacitor C1 and optional serial inductor L2 forms the ESD protection configuration Application Note 7 Rev. 2.1, 2010-07-07 Application Note No. 181 Application Circuit DC, Vcc BGB707 L7ESD R1 L1_optional C1 L_parasitic 6 1 C2 Internal Biasing Vcc L1 D1 Adj 2 5 3 4 VBias R3 VCTRL LNA RFIn C5 RFOut 7 In DC, Von C4 C3 (on pac kage backside) R2 Out L_parasitic ESDschematic_diagram .vsd External ESD protection Figure 6 ESD protection Circuit All parasitic inductances in series to the TVS diode have to be minimized. The amount of these parasitic inductances influence directly the maximum ESD voltage which can be handled. Therefor all interconnects (L-parasitic) attached to the TVS diode D1 has to be kept short as possible. GND via holes have to be placed directly beside the GND pad of D1. The optional serial inductor L2 (or a narrow microstrip line providing ~5nH) isolates the ESD diode from the amplifier input and reduces the residual peak clamping voltage further more. In the Infineon’s application circuit shown in this application note, there is no serial inductor (L2) implemented. 10 kV ESD robustness according IEC61000-4-2 has been achieved. The serial capacitor C1 acts as a DC block and at the same time protects the RF-Input node of the BGB707L7ESD from ESD pulses. So the antenna pin is isolated from the LNA input biasing and the slow slope (see green area in figure 5) of the ESD IEC61000-4-2 test pulse is blocked. Main reason for selection of the TVS diode ESD0P4RFL is the very low diode capacitance of 0.4 pF and the very low peak clamping voltage. This is mandatory to keep the residual ESD voltage (and current) at the BGB707L7ESD RF-In pad as small as possible. The residual ESD current has to be handled by the internal ESD protection of the BGB707L7ESD. Through implementing the optional serial inductor L2 (~5nH) ESD robustness can be enhanced upto 20kV, because of better separation of TVS diode and BGB707L7ESD RF Input. Noise figure will be in the range of 1.45 to 1.5dB with L2 (Murata LQG) implemented. Replacing the inductor L2 by a 2.2 Ohm series resistor (for cost reduction reason) delivers an ESD performance of 15 kV. In this case noise figure is about 1.6...1.7dB Application Note 8 Rev. 2.1, 2010-07-07 Application Note No. 181 Measurement results 4 Measurement results The following graphs show measured performance of the LNA described here. Please note that all this data includes both losses of microstrip lines and SMA connectors. 4.1 Narrowband graphs 1.6 1.55 Noise Figure (dB) 1.5 1.45 1.4 1.35 1.3 1.25 1.2 75 80 85 90 95 Fr e que ncy (M Hz) Figure 7 100 105 110 N F.vs d Noise figure with a 50 Ω termination at input and output Application Note 9 Rev. 2.1, 2010-07-07 Application Note No. 181 Measurement results Gain 18 S21 (dB) 16 14 12 10 8 0 50 100 Frequency (MHz) 150 200 N B_S21 .v s d Figure 8 Gain Matching 0 -1 DB(|S(2,2)|) DB(|S(1,1)|) S11 & S22 (dB) -3 -5 -7 -9 -11 -13 -15 0 Figure 9 50 100 Frequency (MHz) 150 200 Input and output matching Application Note 10 Rev. 2.1, 2010-07-07 Application Note No. 181 Measurement results S12 -15 S12 (dB) -20 -25 -30 0 50 100 Frequency (MHz) 150 200 N B_S12 .v s d Figure 10 Isolation 4.2 Wideband stability Stability 4 K-Factor 3 2 1 0 0 Figure 11 1000 2000 3000 4000 Frequency (MHz) 5000 6000 Stability Application Note 11 Rev. 2.1, 2010-07-07