B GS 13S L 9 Per for man ce of S P3 T R F Swi t c h Mo bile Ph one Appl i c ations Applic atio n N ote A N 301 Revision: Rev. 1.1 2014-02-21 RF and P r otecti on D evic es Edition 2014-02-21 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGS13SL9 Mobile Phone Applications Application Note AN301 Revision History: 2014-02-21 Previous Revision: prev. Rev. 1.0 Page Subjects (major changes since last revision) 7 Table 1 corrected Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Application Note AN301, Rev. 1.1 3 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications List of Content, Figures and Tables Table of Content 1 Introduction ........................................................................................................................................ 6 2 2.1 2.2 2.3 2.4 BGS13SL9 Features ........................................................................................................................... 6 Main Features ...................................................................................................................................... 6 Functional Diagram .............................................................................................................................. 7 Pin Configuration .................................................................................................................................. 7 Pin Description ..................................................................................................................................... 7 3 3.1 3.2 3.3 Application .......................................................................................................................................... 8 Application Bluetooth – WiFi Switch..................................................................................................... 8 Application Post PA Band Switch ......................................................................................................... 8 Application Board ................................................................................................................................. 9 4 4.1 4.2 4.3 4.4 4.5 4.6 4.7 Small Signal Characteristics ........................................................................................................... 10 Forward Transmission from Antenna to the respective RF port with all other ports terminated with 50Ω ..................................................................................................................................................... 10 Reflection coefficient measured at the Antenna port with all other ports terminated at 50Ω ............. 10 Forward Transmission ........................................................................................................................ 11 Reflection RFin Port ........................................................................................................................... 11 Isolation RF1 ...................................................................................................................................... 12 Isolation RF2 ...................................................................................................................................... 12 Isolation RF3 ...................................................................................................................................... 13 5 Intermodulation ................................................................................................................................ 14 6 Harmonic Generation ....................................................................................................................... 16 7 7.1 7.2 7.3 Switching time .................................................................................................................................. 19 Measurement Specifications .............................................................................................................. 19 Measurement Setup ........................................................................................................................... 20 Measurement results .......................................................................................................................... 21 8 Authors .............................................................................................................................................. 22 Application Note AN301, Rev. 1.1 4 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications List of Content, Figures and Tables List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 BGS13SL9 Functional Diagram ........................................................................................................... 7 Pin configuration................................................................................................................................... 7 Application WLAN- Bluetooth ............................................................................................................... 8 Application Smart Phone Block Diagram ............................................................................................. 8 Layout of the application board ............................................................................................................ 9 Layout of de-embedding boards .......................................................................................................... 9 PCB layer information ........................................................................................................................ 10 Forward Transmission Curves for RF Ports ....................................................................................... 11 Reflction RFin Port ............................................................................................................................. 11 Isolation RF1 ...................................................................................................................................... 12 Isolation RF2 ...................................................................................................................................... 12 Isolation RF3 ...................................................................................................................................... 13 Block diagram of RF Switch intermodulation ..................................................................................... 14 Test set-up for IMD Measurements.................................................................................................... 15 Set-up for harmonics measurement ................................................................................................... 16 nd 2 harmonic at fc=830 MHz ............................................................................................................... 17 rd 3 harmonic at fc=830 MHz ................................................................................................................ 17 nd 2 Harmonic at fc=1800 MHz............................................................................................................. 18 rd 3 Harmonic at fc=1800 MHz ............................................................................................................. 18 Switching Time ................................................................................................................................... 19 Rise/Fall Time .................................................................................................................................... 19 Switching Time Measurement Setup ................................................................................................. 20 Screenshot of Switching Time Measurement BGS13SL9 ................................................................ 21 List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Pin Description (top view) .................................................................................................................... 7 Forward Transmission (dB) ................................................................................................................ 10 Reflection Coefficient (dB) ................................................................................................................. 10 Test conditions and specifications of IMD measurements ................................................................. 14 IMD Results Band 1 (Tx 1950 MHz, Rx 2140 MHz, PBL = -15 dBm, Vdd = 3Volt ) ............................. 15 IMD Results Band V (Tx 836.5MHz, Rx 881.5 MHz, PBL = -15 dBm, Vdd = 3Volt ) ........................... 15 Switching time measurement results ................................................................................................. 21 Application Note AN301, Rev. 1.1 5 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Introduction 1 Introduction The BGS13SL9 RF MOS switch is designed for RF switch applications in mobile phones. Any of the 3 ports can be used as termination of the diversity antenna handling up to 30 dBm. This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.5 V to Vdd. The BGS13SL9 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.15 x 1.15 mm² and a maximum height of 0.31 mm. No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port. 2 BGS13SL9 Features 2.1 Main Features 3 high-linearity TRx paths with power handling capability of up to 30 dBm High switching speed, ideal for WLAN and Bluetooth applications All ports fully bi-directional No decoupling capacitors required if no DC applied on RF lines Low insertion loss Low harmonic generation High port-to-port-isolation 0.1 to 3 GHz coverage High ESD robustness On-chip control logic Very small leadless and halogen free package TSLP-9-3 (1.15 x 1.15mm ) with super low height of 0.31 mm RoHS compliant package 2 Application Note AN301, Rev. 1.1 6 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications BGS13SL9 Features 2.2 Functional Diagram RFin BGS13SL9 RF2 RF1 RF3 SP3T Figure 1 BGS13SL9 Functional Diagram 2.3 Pin Configuration Figure 2 Pin configuration 2.4 Pin Description Table 1 DGND VDD V2 V1 Decoder + ESD Protection Pin Description (top view) Pin NO 1 Name V1 Pin Type I Function Control Pin 1 2 RF3 I/O RF port 3 3 RF1 I/O RF port 1 4 RFIN I/O RF port In 5 6 RF2 DGND I/O GND RF port 2 Digital Ground 7 Vdd PWR Supply Voltage 8 V2 I Control Pin 2 9 GND GND Ground Application Note AN301, Rev. 1.1 7 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Application 3 Application 3.1 Application Bluetooth – WiFi Switch Below a general application diagram of a combined WLAN - Bluetooth system is shown. For the low Band WLAN and Bluetooth switching the Infineon BGS13SL6 is applied. The high band switch is the BGS12SN6. BGS13SL9 2.4 GHz TX Diplexer 2.4 GHz RX WiFi/ Bluetooth BT 5 GHz TX 5 GHz RX BGS12SN6 Figure 3 Application WLAN- Bluetooth 3.2 Application Post PA Band Switch TDD+4G Antenna Main Antenna Antenna tuning Antenna tuning BGS15AN16 SP5T SPXT B38 B41 BGS12PL6 RX RX B13 B13 RX FEMiD RX BGS13SL9 B7 B41 B40 2.3-2.7 TX RX MMM PA 3G 4G Multiband receiver Figure 4 Application Smart Phone Block Diagram Application Note AN301, Rev. 1.1 8 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Application This application of a multiband smart phone show the big amount of RF Switches, used for the band- and TX/ RX switching. Infineon can address the SP5T BGS15AN16 for the antenna switch, the BGS12PL6 for the TX / RX switching and the BGS13SL9 for the post PA band selecting switch. Especially this RF switch from Infineon is described in the application note. 3.3 Application Board Below is a picture of the evaluation board used for the measurements (Figure 5). The board is designed so that all connecting 50 Ohm lines have the same length. In order to get accurate values for the insertion loss of the BGS13SL6 all influences and losses of the evaluation board, lines and connectors have to be eliminated. Therefore a separate de-embedding board, representing the line length is necessary (Figure 6). The calibration of the network analyser (NWA) is done in severall steps: - Perform full calibration on all NWA ports. - Attach empty SMA connector at port 2 and perform “open” port extension. Turn port extensions on. - Connect the “half” de-embedding board (Figure 6 left board) between port1 and port2, store this as a s-parameter (.s2p) file. - Turn all port extentions off. - Load the stored s-parameter file as de-embedding file for all used NWA ports - Switch all port extentions on - Check insertion loss with the de-embedding through board (Figure 6 right board) Figure 5 Layout of the application board Figure 6 Layout of de-embedding boards The construction of the PCB is shown in Figure 7. Application Note AN301, Rev. 1.1 9 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Small Signal Characteristics Vias Rodgers , 0.2mm Copper 35µm FR4, 0.8mm Figure 7 PCB layer information 4 Small Signal Characteristics The small signal characteristics are measured at 25 °C with a Network analyzer connected to an automatic multiport switch box. 4.1 Forward Transmission from Antenna to the respective RF port with all other ports terminated with 50Ω Table 2 Forward Transmission (dB) Frequency (MHz) 824 915 1000 1710 1910 2170 2690 RF1 -0.33 -0.34 -0.34 -0.39 -0.42 -0.47 -0.64 RF2 -0.34 -0.35 -0.35 -0.39 -0.42 -0.46 -0.6 RF3 -0.34 -0.35 -0.35 -0.39 -0.42 -0.47 -0.64 4.2 Reflection coefficient measured at the Antenna port with all other ports terminated at 50Ω Table 3 Reflection Coefficient (dB) Frequency (MHz) 824 915 1000 1710 1910 2170 2690 RF1 -30.6 -29.7 -28.8 -20.5 -18.9 -17 -13.6 RF2 -31.3 -30.1 -28.9 -21.6 -19.8 -17.8 -14.4 RF3 -31.9 -31 -30.6 -21.9 -20.1 -17.9 -14.4 Application Note AN301, Rev. 1.1 10 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Small Signal Characteristics 4.3 Forward Transmission Forward Transmission RF Ports 0 [dB] -2 824 MHz -0.3427 dB -4 2690 MHz -0.6011 dB 1000 MHz -0.3492 dB 915 MHz -0.3455 dB 1710 MHz -0.3948 dB 1910 MHz -0.4222 dB 2170 MHz -0.4617 dB RF1 RF3 RF2 -6 -8 0 1000 2000 3000 4000 Frequency (MHz) Figure 8 Forward Transmission Curves for RF Ports 4.4 Reflection RFin Port 5000 6000 Reflection ANT Port 0 [dB] -10 -20 2690 MHz -14.4 dB -30 RFin_RF1 RFin_RF2 RFin_RF3 -40 0 Figure 9 1000 2000 3000 4000 Frequency (MHz) 5000 6000 Reflction RFin Port Application Note AN301, Rev. 1.1 11 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Small Signal Characteristics 4.5 Isolation RF1 Isolation_RF1_active 0 -20 -40 RF2_RF1 -60 RF3_RF1 RF2_RF3 -80 RF3_RFin RF2_RFin -100 0 Figure 10 Isolation RF1 4.6 Isolation RF2 1000 2000 3000 4000 Frequency (MHz) 5000 6000 Isolation_RF2_active 0 -20 -40 RF1_RF2 -60 RF3_RF1 RF3_RFin -80 RF3_RF2 RF2_RFin -100 0 Figure 11 1000 2000 3000 4000 Frequency (MHz) 5000 6000 Isolation RF2 Application Note AN301, Rev. 1.1 12 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Small Signal Characteristics 4.7 Isolation RF3 Isolation_RF3_active 0 -20 -40 RF1_RF2 -60 RF3_RF1 RF2_RFin -80 RF3_RF2 RF1_RFin -100 0 Figure 12 1000 2000 3000 4000 Frequency (MHz) 5000 6000 Isolation RF3 Application Note AN301, Rev. 1.1 13 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Intermodulation 5 Intermodulation Another very important parameter of a RF switch is the large signal capability. One of the possible intermodulation scenarios is shown in Figure 13. The transmission (Tx) signal from the main antenna is coupled into the diversity antenna with with high power.This signal (20 dBm) and a received Jammer signal (-15 dBm) are entering the switch. Coupled Tx Signal from main antenna Jammer (CW) Receiver Diversity Antenna RF Switch IMD Figure 13 Block diagram of RF Switch intermodulation Special combinations of TX and Jammer signal are producing intermodulation products 2 nd and 3rd order, which fall in the RX band and disturb the wanted RX signal. In Table 4 frequencies for 3 bands and the linearity specifications for an undisturbed communication are given. Table 4 Test conditions and specifications of IMD measurements Test Conditions (Tx = +20dBm, Bl = -15dBm,freq.in MHz,@25°C) Band Tx Freq. Rx Freq. IMD2 Low Jammer 1 850 836.5 881.5 45 791.5 1900 1880 1960 80 2100 1950 2140 190 Linearity Specification IMD3 IMD2 High Jammer 2 Jammer 3 IM2 (dBm) IIP2 (dBm) IM3 (dBm) IIP3 (dBm) 1718 -105 110 -105 65 1800 3840 -105 110 -105 65 1760 4090 -105 110 -105 65 The test setup for the IMD measurements has to provide a very high isolation between RX and TX signals. As an example the test set-up and the results for the high band are shown (Figure 14 and Table 6). For the RX / TX separation a professional duplexer with 80 dB isolation is used. In Table 5 the results for High band are given. For each distortion scenario there is a min and a max value given. This variation is caused by a phase shifter connected between switch and duplexer. In the test set-up the phase shifter represents a no ideal matching of the switch to 50 Ohm. Application Note AN301, Rev. 1.1 14 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Intermodulation Load -20dB -3dB Tx K&L Mini Circuits (ZHL-30W-252 -S+) Signal Generator Power Amplifier Duplexer Tunable Bandpass Filter Circulator DUT Phase Shifter / Delay Line ANT TRx -20dB ANT K&L Tunable Bandpass Filter Signal Generator Rx K& L Signal Analyzer Figure 14 Table 5 Power reference plane PTx = +20 dBm PBl = -15 dBm -3 dB Tunable Bandpass Filter Test set-up for IMD Measurements IMD Results Band 1 (Tx 1950 MHz, Rx 2140 MHz, PBL = -15 dBm, Vdd = 3Volt ) Ant –RF1 Band I Ant – RF2 Ant – RF3 Min Max Min Max Min Max IMD2Low fb=190MHz,PTX=10dBm -118.25 -107.46 -116.29 -106.49 -116.39 -106.04 IMD2High fb=4090MHz,PTX=10dBm -108.73 -106.52 -109.24 -106.25 -108.45 -106.69 IMD3 fb=1760MHz,PTX=10dBm -120.61 -113.93 -120.67 -113.63 -118.17 -108.01 Table 6 IMD Results Band V (Tx 836.5MHz, Rx 881.5 MHz, PBL = -15 dBm, Vdd = 3Volt ) Ant – RF1 Band V Ant – RF2 Ant – RF3 Min Max Min Max Min Max IMD2Low fb=45MHz,PTX=10dBm -114.48 -109.39 -113.84 -108.95 -113.08 -108.25 IMD2High fb=1718MHz,PTX=10dBm -110.64 -107.34 -110.79 -107.42 -109.53 -105.79 IMD3 fb=791.5MHz,PTX=10dBm -118.99 -115.97 -119.97 -115.47 -122.33 -115.91 Application Note AN301, Rev. 1.1 15 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Harmonic Generation 6 Harmonic Generation Harmonic generation is another important parameter for the characterization of a RF switch. RF switches have to deal with high RF levels, up to 33 dBm. With this high RF power at the input of the switch harmonics are generated. This harmonics (2 nd rd and 3 ) can disturb the other reception bands or cause distortion in other RF applications (GPS, WLan) within the mobile phone. Load -20dB Directional Coupler -20dB Signal Generator Power Amplifier Circulator Tunable Bandpass Filter A Power meter Agilent E4419B -3dB B DUT ANT K&L Signal Analyzer Figure 15 -20dB Tunable Bandstop Filter Tx Directional Coupler Set-up for harmonics measurement nd rd The results for the harmonic generation at 830 MHZ are shown in Figure 16 (2 harmonic) and Figure 17 (3 harmonic) for all RF ports. At the x-axis the input power is plotted and at the y- axis the generated harmonics in dBm. Application Note AN301, Rev. 1.1 16 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Harmonic Generation H2 LB @ 25°C Pin [dBm) -30 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 -40 H2 [dBm] -50 RF1 @ 3V -60 RF2 @ 3V -70 -80 RF3 @ 3V -90 Figure 16 nd 2 harmonic at fc=830 MHz H3 LB @ 25°C Pin [dBm] -30 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 -40 H3 [dBm] -50 RF1 @ 3V -60 RF2 @ 3V -70 -80 RF3 @ 3V -90 Figure 17 rd 3 harmonic at fc=830 MHz Application Note AN301, Rev. 1.1 17 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Harmonic Generation H2 HB @ 25°C Pin [dBm) -30 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 -40 H2 [dBm] -50 RF1 @ 3V -60 RF2 @ 3V -70 -80 RF3 @ 3V -90 Figure 18 nd 2 Harmonic at fc=1800 MHz H3 HB @ 25°C Pin [dBm] -20 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 -30 H3 [dBm] -40 RF1 @ 3V -50 -60 RF2 @ 3V -70 -80 RF3 @ 3V -90 Figure 19 rd 3 Harmonic at fc=1800 MHz Application Note AN301, Rev. 1.1 18 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Switching time 7 Switching time 7.1 Measurement Specifications Switching On Time: 50% Trigger signal to 90 % RF Signal Switching Off Time: 50% Trigger signal to 10% RF Signal VCTRL 2 VCTRL tON 90% RF signal RF signal 10% RF signal tOFF Figure 20 Switching Time Rise time: 10% to 90% RF Signal Fall time: 90% to 10% RF Signal 90% RF signal RF signal tOFF tON Figure 21 10% RF signal Rise/Fall Time Application Note AN301, Rev. 1.1 19 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Switching time 7.2 Measurement Setup Figure 22 Switching Time Measurement Setup Application Note AN301, Rev. 1.1 20 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Switching time 7.3 Measurement results The switching Time measurement setup consist of one pulse generator which generates a sqare wave with 50% duty cycle and an amplitude of 1.8 Volts, an oscilloscope which can detect the 1 GHz signal and the 1 kHz signal and one Signal generator which is set to an output signal of 1GHz with a power level 10 dBm. If the oscilloscope can not detect the 1 GHz signal of the RF path, due to small bandwith, it is possible tu use a cristal oscillator in front of the oscilloscope (such a device detects any RF signal present at input and commutate that one) that the RF signal can be detected. 104 ns 25 ns Figure 23 Table 7 Screenshot of Switching Time Measurement BGS13SL9 Switching time measurement results BGS13SL9 Application Note AN301, Rev. 1.1 RF rise time (ns) Switching time (ns) 25 104 21 / 23 2014-02-21 BGS13SL9 Mobile Phone Applications Authors 8 Authors Ralph Kuhn, Senior Staff Application Engineer of the Business Unit “RF and Protection Devices” Andre Dewai, Application Engineer of the Business Unit “RF and Protection Devices” Application Note AN301, Rev. 1.1 22 / 23 2014-02-21