PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz Description The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Features Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 22 Gain 50 20 40 19 30 18 • Unmatched • Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efficiency = 62% • Typical CW performance, 2170 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 20.3 dB - Efficiency = 60% • Typical CW performance, 2655 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 19.9 dB - Efficiency = 59.5% • Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power • Integrated ESD protection: Human Body Model Class 1A (per JESD22-A114) • Pb-free and RoHS compliant 60 Efficiency 20 2110 MHz 2140 MHz 2170 MHz 17 16 10 c270051m-gr1.3 22 24 26 28 30 32 34 36 Drain Efficiency (%) Gain (dB) 21 PTFC270051M Package PG-SON-10 38 0 40 Output Power (dBm) RF Characteristics, 2170 MHz CW Specifications (tested in Infineon test fixture) VDD = 28 V, IDQ = 65 mA, POUT = 5 W, ƒ1 = 2110 MHz, ƒ2 = 2170 MHz Characteristic Gain Symbol Min Typ Max Unit Gps 18.5 19.5 — dB All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 14 Rev. 01, 2015-03-20 PTFC270051M DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 60 V, VGS = 0 V IDSS — — 1 µA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 2 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 65 mA VGS 2.2 2.7 3.2 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE 70°C, 5.5 W CW) RθJC 3.84 °C/W Junction Temperature Moisture Sensitivity Level Level Test Standard 3 IPC/JEDEC J-STD-020 Package Temperature 260 Unit °C Ordering Information Type Order Code Package and Description Shipping PTFC270051M V2 R1K PTFC270051MV2R1KXUMA1 PG-SON-10, molded plastic, SMD Tape & Reel, 1000 pcs Data Sheet 2 of 14 Rev. 01, 2015-03-20 PTFC270051M RF Characteristics, 2170 MHz Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 2157.5 MHz, ƒ2 = 2167.5 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 21 — dB Drain Efficiency ηD — 21.5 — % Intermodulation Distortion IMD — –35.5 — dBc Typical Performance, 2170 MHz (data taken in a production test fixture) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2110 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 65 mA, ƒ = 2140 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW -25 -5 55 -15 45 -35 35 -45 25 -55 15 -65 c270051m-2100-gr4 22 24 26 28 30 32 34 36 38 -25 55 45 -35 35 -45 25 -55 15 -65 5 c270051m-2100-gr5 22 40 24 26 28 30 32 34 36 38 5 40 Output Power (dBm) Output Power (dBm) Data Sheet 65 IMD Low IMD Up ACPR Efficiency Drain Efficiency (%) -15 65 IMD (dBc), ACPR (dBc) IMD Low IMD Up ACPR Efficiency Drain Efficiency (%) IMD (dBc), ACPR (dBc) -5 3 of 14 Rev. 01, 2015-03-20 PTFC270051M Typical Performance, 2170 MHz (cont.) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2170 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 65 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 65 IMD Low IMD Up ACPR Efficiency 45 -35 35 -45 25 -55 15 -65 24 26 28 30 32 34 36 38 -35 -45 5 c270051m-2100-gr6 22 -25 2110 IMD Low 2140 IMD Low 2170 IMD Low -55 40 c270051m-2100-gr7 22 24 26 Output Power (dBm) 66 18 30 Efficiency 2110 MHz 2140 MHz 2170 MHz 14 18 c270051m-2100-gr8 28 30 32 34 36 38 Power Gain (dB) 42 Efficiency (%) Gain (dB) 20 26 36 38 40 70 21 60 Gain 20 50 19 40 18 30 17 Efficiency 15 6 10 c270051m-2100-gr11 22 40 20 VDD = 24 V VDD = 28 V VDD = 32 V 16 24 26 28 30 32 34 36 38 0 40 Output Power (dBm) Output Power (dBm) Data Sheet 34 22 54 Gain 24 32 IDQ = 65 mA, ƒ = 2170 MHz 24 22 30 CW Performance at selected supply voltage CW Performance 16 28 Output Power (dBm) VDD = 28 V, IDQ = 65 mA 22 2110 IMD Up 2140 IMD Up 2170 IMD Up Efficiency (%) -25 55 IMD (dBc) -15 -15 Drain Efficiency (%) IMD (dBc), ACPR (dBc) -5 4 of 14 Rev. 01, 2015-03-20 PTFC270051M Typical Performance, 2170 MHz (cont.) Small Signal CW Performance VDD = 28 V, IDQ = 65 mA 22 Power Gain (dB) 21 -5 IRL 20 -10 19 -15 18 -20 Gain 17 16 2000 -25 Input Return Loss (dB) 0 -30 2300 c270051m-2100-gr12 2050 2100 2150 2200 2250 Frequency (MHz) Broadband Circuit Impedance, 2170 MHz Z Source Ω D Z Load Ω Freq [MHz] R jX R jX 2110 1.5 –2.6 9.5 5.4 2140 1.5 –2.7 8.7 5.5 2170 1.5 –2.9 7.7 5.6 Z Source Z Load G S Load Pull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA P1dB Class AB Max Output Power Zs [Ω] [Ω] 2110 1.5 – j2.6 10.6 + j2.6 20.6 55.0 39.50 8.9 8.3 + j8.2 22.5 64.9 38.50 7.1 2140 1.4 – j2.7 9.8 + j2.8 20.5 56.4 39.46 8.8 7.6 + j8.8 22.9 64.1 37.90 6.2 2170 1.4 – j2.9 9.2 + j2.8 20.7 56.2 39.20 8.3 6.2 + j8.3 23.0 63.8 37.40 5.5 Data Sheet Zl Gain [dB] PAE [%] POUT [dBm] Max PAE Freq [MHz] POUT [W] 5 of 14 Zl [Ω] Gain [dB] PAE [%] POUT [dBm] POUT [W] Rev. 01, 2015-03-20 PTFC270051M Reference Circuit, 2170 MHz DUT PTFC270051M Test Fixture Part No. LTN/PTFC270051M V2 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower) VDD R101 C203 C103 R102 C102 RF_IN C202 C201 C204 RF_OUT C101 PTFC270051M_06 2100 MHz RO4350, .020 (169) c 27 0 0 51 M _c d_ 1 0 -1 6 -1 3 Production test circuit assembly diagram (not to scale) Components Information Component Description Supplier P/N C101 Chip capacitor, 1 pF ATC ATC600S1R0BI250X C102 Chip capacitor, 2.2 µF TDK Corporation C4532X7R1H225M160KA C103 Chip capacitor, 12 pF ATC ATC600S120BT250X C201 Chip capacitor, 1.1 pF ATC ATC600S1R1BT250X C202 Chip capacitor, 12 pF ATC ATC600S120BT250X C203 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C204 Chip capacitor, 12 pF ATC ATC600S120BT250X R101, R102 Resistor, 10 Ω Panasonic ERJ-8GEYJ100V Data Sheet 6 of 14 Rev. 01, 2015-03-20 PTFC270051M RF Characteristics, 940 MHz Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 935 MHz, ƒ2 = 945 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 24 — dB Drain Efficiency ηD — 20.7 — % Intermodulation Distortion IMD — –42 — dBc Typical Performance, 940 MHz Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 25 -15 60 45 23 30 Efficiency 22 15 920 MHz 940 MHz 960 MHz 21 c270051m-900-gr1.3 22 24 26 28 30 32 34 36 38 -35 -45 920 IMDL 940 IMDL 960 IMDL -55 0 920 IMDU 940 IMDU 960 IMDU c270051m-900-gr7 22 40 Output Power (dBm) Data Sheet -25 IMD (dBc) 24 Drain Efficiency (%) Gain (dB) Gain 24 26 28 30 32 34 36 38 40 Output Power (dBm) 7 of 14 Rev. 01, 2015-03-20 PTFC270051M Reference Circuit, 940 MHz (cont.) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 920 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 65 mA, ƒ = 940 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW -15 45 -35 35 -45 25 -55 15 -65 c270051m-900-gr4 22 24 26 28 30 32 34 36 IMD Low ACPR IMD Up Efficiency -25 35 -45 25 -55 15 -65 5 c270051m-900-gr5 22 38 24 26 30 32 34 Two-carrier WCDMA Drive-up CW Performance VDD = 28 V, IDQ = 65 mA, ƒ = 960 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 65 mA -25 55 24 54 22 42 20 30 45 -35 35 -45 25 -55 15 -65 c270051m-900-gr6 24 26 28 30 32 34 5 38 26 36 66 Gain 5 Gain (dB) IMD Low IMD Up ACPR Efficiency -15 36 65 Drain Efficiency (%) IMD (dBc), ACPR (dBc) 28 Output Power (dBm) -5 920 MHz 940 MHz 960 MHz Efficiency 18 16 38 18 c270051m-900-gr8 21 25 29 33 37 6 41 Output Power (dBm) Output Power (dBm) Data Sheet 45 -35 Output Power (dBm) 22 55 Drain Efficiency (%) 55 65 Efficiency (%) -25 -5 IMD (dBc), ACPR (dBc) IMD Low IMD Up ACPR Efficiency -15 65 Drain Efficiency (%) IMD (dBc), ACPR (dBc) -5 8 of 14 Rev. 01, 2015-03-20 PTFC270051M Typical Performance, 940 MHz (cont.) CW Performance at selected supply voltages Small Signal CW Performance Power Gain (dB) 22 26 -4 54 24 -8 42 20 30 Efficiency VDD = 24 V VDD = 28 V VDD = 32 V 18 c270051m-900-gr9 24 26 28 30 32 34 36 22 -12 Gain 20 -16 18 18 -20 6 16 IRL 16 22 Power Gain (dB) Gain 24 66 Efficiency (%) 26 Input Return Loss (dB) VDD = 28 V, IDQ = 65 mA IDQ = 65 mA, ƒ = 960 MHz 38 40 -24 1000 1050 1100 c270051m-900-gr12 750 800 850 900 950 Frequency (MHz) Output Power (dBm) Broadband Circuit Impedance Z Source Ω D Z Load Ω Freq [MHz] R jX R jX 920 3.3 10 25.6 13.2 940 3.4 10.2 24.7 13.3 960 3.5 10.3 24.3 14.7 Z Source Z Load G S Loadpull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA P1dB Class AB Max Output Power Freq [MHz] Zs [Ω] 920 940 960 3.55 + j10.3 Max PAE [Ω] Gain [dB] PAE [%] POUT [dBm] POUT [W] 3.35 + j10 25.7 + j4.7 25.5 62.2 39.40 3.4 + j10.2 24.8 + j6.3 25.6 62.1 39.35 24.4 + j6.6 25.3 60.3 39.10 Data Sheet Zl [Ω] Gain [dB] PAE [%] POUT [dBm] POUT [W] 8.7 25.6 + j21.7 27.6 70.7 38.00 6.3 8.6 24.6 + j20.4 27.3 69.2 38.10 6.5 8.1 24.1 + j22.8 27.3 68.2 37.50 5.6 9 of 14 Zl Rev. 01, 2015-03-20 PTFC270051M RF Characteristics, 2655 MHz Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 2650 MHz, ƒ2 = 2660 MHz 3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 20.9 — dB Drain Efficiency ηD — 19 — % Intermodulation Distortion IMD — –40 — dBc Typical Performance, 2655 MHz Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 22 Gain 40 19 30 Efficiency 20 2620 MHz 2655 MHz 2690 MHz 17 16 24 26 28 30 32 34 36 2620 IMD Low 2620 IMD Up 2655 IMD Low -35 2655 IMD Up 2690 IMD Low 2690 IMD Up 38 -45 0 c270051m-2600-gr7 22 40 24 26 28 30 32 34 36 38 40 Output Power (dBm) Output Power (dBm) Data Sheet -25 10 c270051m-2600-gr1.3 22 IMD (dBc) 50 20 18 -15 Drain Efficiency (%) Gain (dB) 21 60 10 of 14 Rev. 01, 2015-03-20 PTFC270051M Typical Performance, 2655 MHz (cont.) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 65 mA, ƒ = 2655 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW -15 45 -35 35 -45 25 -55 15 -65 5 c270051m-2600-gr4 22 24 26 28 30 32 34 36 38 IMD Low IMD Up ACPR Efficiency -25 35 -45 25 -55 15 -65 40 c270051m-2600-gr5 22 24 26 30 32 34 36 Two-carrier WCDMA Drive-up CW Performance VDD = 28 V, IDQ = 65 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW VDD = 28 V, IDQ = 65 mA -25 45 -35 35 19 40 18 30 -55 15 16 5 15 c270051m-2600-gr6 26 28 30 32 34 36 38 17 Efficiency 20 2620 MHz 2655 MHz 2690 MHz 10 c270051m-2600-gr8 22 40 60 50 25 -65 Gain 20 -45 24 5 40 70 21 55 Gain (dB) -15 38 22 65 IMD Low IMD Up ACPR Efficiency Drain Efficiency (%) IMD (dBc), ACPR (dBc) 28 Output Power (dBm) -5 24 26 28 30 32 34 36 38 0 40 Output Power (dBm) Output Power (dBm) Data Sheet 45 -35 Output Power (dBm) 22 55 Drain Efficiency (%) 55 65 Efficiency (%) -25 -5 IMD (dBc), ACPR (dBc) IMD Low IMD Up ACPR Efficiency -15 65 Drain Efficiency (%) IMD (dBc), ACPR (dBc) -5 11 of 14 Rev. 01, 2015-03-20 PTFC270051M Typical Performance, 2655 MHz (cont.) CW Performance at selected supply voltages Small Signal CW Performance VDD = 28 V, IDQ = 65 mA IDQ = 65 mA, ƒ = 2690 MHz 22 70 Gain VDD = 24 V VDD = 28 V VDD = 32 V 19 40 18 30 Efficiency 17 20 16 10 15 c270051m-2600-gr11 22 22 -5 26 30 34 38 Gain 21 -10 20 -15 19 -20 IRL 18 0 17 2590 42 -25 Input Return Loss (dB) 50 Power Gain (dB) 20 0 60 Efficiency (%) Power Gain (dB) 21 23 -30 2740 c270051m-2600-gr12 2640 Output Power (dBm) 2690 Frequency (MHz) Broadband Circuit Impedance Z Source Ω D Z Load Ω Freq [MHz] R jX R jX 2490 1.5 –4.1 7.2 1.5 2590 1.5 –4.6 6.6 0.7 2690 1.5 –5.5 6.3 -0.6 Z Source Z Load G S Load Pull Performance Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA P1dB Class AB Max Output Power Max PAE Freq [MHz] Zs [Ω] Zl [Ω] Gain [dB] PAE [%] POUT [dBm] POUT [W] Zl [Ω] Gain [dB] PAE [%] POUT [dBm] POUT [W] 2490 1.5 – j4.1 8.2 + j0.3 19.7 55.6 39.0 7.94 6.2 + j2.8 20.9 62.2 38.4 6.9 2590 1.5 – j4.6 6.9 – j0.8 18.8 55.6 39.0 7.94 5.0 + j2.1 21.0 63.4 37.9 6.2 2690 1.5 – j5.5 7.8 – j2.0 18.4 55.6 39.0 7.94 4.9 + j0.8 20.4 63.6 37.8 6.0 Data Sheet 12 of 14 Rev. 01, 2015-03-20 PTFC270051M Package Outline Specifications Package PG-SON-10 >@3/$&(6 ; >@3/$&(6 >@ >@ >@ >@ 6 >@ ; >@3/$&(6 ,1'(; 0$5.,1* ; >@3/$&(6 7239,(: >@ ,1'(; 0$5.,1* >@ %277209,(: >@%27+6,'(6 >@ 3*621BSRBB >@ 6,'(9,(: Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.10 [0.004]. 4. Package dimensions: 4.0 mm X 4.0 mm X 1.42 mm. 5. Pins: 1 – 5, gate; 6 – 10, drain; S (bottom side metallization), source. 6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower) Data Sheet 13 of 14 Rev. 01, 2015-03-20 PTFC270051M V2 Revision History Revision Date Data Sheet Page Subjects (major changes since last revision) 01 2015-03-20 Production All Specifications and performance represent released product. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: ([email protected]) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2015-03-20 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 14 of 14 Rev. 01, 2015-03-20