Datasheet IPL65R1K5C6S

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
1Description
ThinPAK5x6
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET
whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction
lossesmakeswitchingapplicationsevenmoreefficient,morecompact,
lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,
TelecomandUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
1.5
Ω
Qg,typ
11
nC
ID,pulse
8.4
A
[email protected]
1.15
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
Package
Marking
IPL65R1K5C6S
ThinPAK 5x6 SMD
65C61K5
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
3
1.9
A
TC = 25°C
TC = 100°C
-
8.4
A
TC=25°C
-
-
26
mJ
ID =0.6A; VDD = 50V
EAR
-
-
0.10
mJ
ID =0.6A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
0.6
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...520V
Gate source voltage
VGS
-20
-30
-
20
30
V
static;
AC (f>1 Hz)
Power dissipation (non FullPAK)
Ptot
-
-
26.6
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
2.6
A
TC=25°C
IS,pulse
-
-
7.5
A
TC = 25°C
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
dif/dt
-
-
500
A/µs VDS=0...400V,ISD<=IS,Tj=25°C
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
Diode pulse current
3)
Reverse diode dv/dt
3)
Maximum diode commutation speed
3Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)
Parameter
Symbol
Thermal resistance, junction - case
RthJC
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
-
-
4.7
°C/W -
Thermal resistance, junction - ambient RthJA
-
35
62
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
°C/W thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
reflow MSL1
1)
Limited by Tj max. Maximum duty cycle D=0.75
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
4
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
3.50
V
VDS=VGS,ID=0.1mA
-
10
1
-
µA
VDS=650V,VGS=0V,Tj=25°C
VDS=650V,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.35
3.51
1.50
-
Ω
VGS=10V,ID=1A,Tj=25°C
VGS=10V,ID=1A,Tj=150°C
Gate resistance
RG
-
6.5
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
650
-
Gate threshold voltage
V(GS)th
2.50
Zero gate voltage drain current
IDSS
Gate-source leakage curent
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
225
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
18
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1)
Co(er)
-
10
-
pF
VGS=0V,VDS=0...520V
Effective output capacitance, time
related2)
Co(tr)
-
42
-
pF
ID=constant,VGS=0V,VDS=0...520V
Turn-on delay time
td(on)
-
7.7
-
ns
VDD=400V,VGS=10V,ID=1.5A,
RG=10.2Ω
Rise time
tr
-
5.9
-
ns
VDD=400V,VGS=10V,ID=1.5A,
RG=10.2Ω
Turn-off delay time
td(off)
-
33
-
ns
VDD=400V,VGS=10V,ID=1.5A,
RG=10.2Ω
Fall time
tf
-
18.2
-
ns
VDD=400V,VGS=10V,ID=1.5A,
RG=10.2Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
1.3
-
nC
VDD=520V,ID=1.5A,VGS=0to10V
Gate to drain charge
Qgd
-
5.8
-
nC
VDD=520V,ID=1.5A,VGS=0to10V
Gate charge total
Qg
-
11
-
nC
VDD=520V,ID=1.5A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=520V,ID=1.5A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)
Final Data Sheet
5
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=1.5A,Tf=25°C
200
-
ns
VR=400V,IF=1.5A,diF/dt=100A/µs
-
0.9
-
µC
VR=400V,IF=1.5A,diF/dt=100A/µs
-
8
-
A
VR=400V,IF=1.5A,diF/dt=100A/µs
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
6
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
30
25
101
1 µs
20
10 µs
ID[A]
Ptot[W]
100
15
100 µs
10-1
1 ms
10
10-2
5
10 ms
DC
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
0.5
101
0.2
1 µs
100
100
ZthJC[K/W]
ID[A]
10 µs
100 µs
10-1
1 ms
0.1
0.05
0.02
10-1
0.01
single pulse
10-2
10 ms
DC
10-3
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
7
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
10
6
20 V
10 V
9
20 V
10 V
8V
5
8
8V
7
4
7V
3
6V
7V
ID[A]
ID[A]
6
5
4
3
6V
2
5.5 V
5V
1
4.5 V
5V
1
0
5.5 V
2
4.5 V
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
5.6
4.5
4.0
10 V
5.1
5.5 V
4.6
6V
3.5
6.5 V
7V
4.1
3.6
RDS(on)[Ω]
RDS(on)[Ω]
3.0
20 V
2.5
98%
2.0
typ
1.5
3.1
1.0
2.6
2.1
0.5
0
2
4
6
0.0
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=1A;VGS=10V
8
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
9
10
8
9
25 °C
8
7
120 V
7
6
480 V
6
4
VGS[V]
ID[A]
5
150 °C
5
4
3
3
2
2
1
0
1
0
2
4
6
8
10
0
12
0
5
VGS[V]
10
15
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
1
10
30
25
100
125 °C
EAS[mJ]
IF[A]
20
25 °C
15
10
5
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=0.6A;VDD=50V
9
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
740
720
103
700
Ciss
C[pF]
VBR(DSS)[V]
680
660
102
640
Coss
101
620
600
Crss
580
-75
-50
-25
0
25
50
75
100
125
150
175
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
1.60
1.40
1.20
Eoss[µJ]
1.00
0.80
0.60
0.40
0.20
0.00
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
10
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
11
ID
VDS
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
7PackageOutlines
DOCUMENT NO.
Z8B00172997
SCALE
DIM
A
b
b1
c
D
D1
E
E1
E2
e
K1
K2
L
L1
N
MILLIMETERS
MIN
0.90
0.30
0.00
0.10
4.90
4.11
5.90
2.60
0.20
MAX
1.10
0.50
0.05
0.30
5.10
4.31
6.10
2.80
0.40
MIN
0.035
0.012
0.000
0.004
0.193
0.162
0.232
0.102
0.008
2.00
0.50
0.65
0.65
0.071
0.012
0.018
0.018
1.27 (BSC)
1.80
0.30
0.45
0.45
0
INCHES
MAX
0.043
0.020
0.002
0.012
0.201
0.170
0.240
0.110
0.016
1
0
1
2mm
EUROPEAN PROJECTION
0.05 (BSC)
8
0.079
0.020
0.026
0.026
8
ISSUE DATE
17-04-2014
REVISION
01
Figure1OutlineThinPAK5x6SMD,dimensionsinmm/inches
Final Data Sheet
12
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
8AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
13
Rev.2.0,2014-07-08
650VCoolMOS™C6PowerTransistor
IPL65R1K5C6S
RevisionHistory
IPL65R1K5C6S
Revision:2014-07-08,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-07-08
Release of final version
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
14
Rev.2.0,2014-07-08